300JXS Search Results

DN2620

Contextual Info: DN2620 DN2624 Advanced Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / B^DGX ^DS ON Idss (max) (min) TO-92 DICE 200V 4.0Q 600mA DN2620N3 DN2620ND 240V 4.0Q 600mA DN2624N3 DN2624ND Advanced DMOS Technology

VN2780

Contextual Info: VN2780 Advanced Information N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^D S O N ^D(ON) b v dgs (max) (min) SO-8 Dice 800V 16Q 500mA VN2780LG VN2780ND Features Advanced DMOS Technology □ Free from secondary breakdown

Contextual Info: LP0801 h m . _ Low ThreshoJ P relim ina ry P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV DGS -16.5V D max (min) V GS(th) (max) 12.0Q -20 0m A -1.0V DS(ON) ^D(ON) Order Number / Package TO-236AB*

Contextual Info: VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON I d (ON) BVdgs (max) (min) TO-39 TO-92 30V 1 .2 0 . 1.0A V N 0 30 0B V N 0 30 0L Advanced DMOS Technology High Reliability Devices See pages 5 -4 and 5-5 fo r M ILIT A R Y S T A N D A R D P rocess Flows

11n50

Contextual Info: PRELIMINARY 15R6CT/3 SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 A ^ Designer’s Data Sheet FEATURES: tmr High Voltage Schottky Process Minimal recovery time and leakage increase over

Ztx458

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSU E 2 - MARCH 1994_ FEATURES * 400 Volt VCE0 * 0.5 Am p continuous current * 1 Watt E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage

MB437

Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT SBLB25L20CT THRU SBLB25L30CT SCHOTTKY RECTIFIER Reverse Voltage - 20 and 25 Volts Forward Current - 25,0 Amperes FEATURES TO-263AB Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction, majority carrier conduction

Contextual Info: 6KA24 TRANSIENT SUPPRESSOR PREMIUM AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR Stand-off Voltage - 24 Volts Peak Pulse Power - 6000 Watts FEATURES ♦ Designed for under the hood applications ♦ Plastic package has Underwriters Laboratories Flammability Classification 94V-0

K1001

Abstract: 654V k1001 transistor
Contextual Info: r=7 SGS-THOMSON m 7M [^D l]©llLl©Tri©K1001_ MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration

ZTX1051A

Abstract: transistor 3342
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A ISSUE 2 -JANUARY 95. " ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL ZTX1051A UNIT Collector-Base Voltage VCBO 150 V Collector-Em itter Voltage VCEO 40 V Em itter-Base Voltage VEBO

NTC2335

Abstract: NTC23
Contextual Info: SEC SILICON POWER TRANSISTOR ELECTRON DEVICE NTC2335 HIGH S P E E D HIGH C U R R E N T SW IT C H IN G NPN S IL IC O N T R IP L E D IFF U S E D T R A N S IS T O R Industrial Use DESCRIPTION Suitable for switching regulator, DC-DC converter and ultrasonic appliance applications.

Contextual Info: _| _ Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CUlOQIC c o r p o r a t io n ^ 3N161 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Channel Cut Off W ith Zero Gate Voltage • Square-Law Transfer Characteristic Reduces Distortion

Contextual Info: TN0635 TN0640 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BV Dss / R dS ON •d (ON) V GS(th) b v dgs (max) (min) (max) TO-92 Diet 350V ion -ion 1.0A 1.8V TN0635N3 TN0635ND 1.0A 1.8V

p023 diode

Contextual Info: DN2530 Prelim inary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v d sx/ ^DS ON Id s s B^ dgx (max) (min) TO-92 TO-243AA* DIE 300V 12Q 200mA DN2530N3 DN2530N8 DN2530ND * Sam e as SOT-89. For carrier tape reels sp ecify P023 fo r 1,000 units o r P024 fo r 2,000 units.

D240C

Contextual Info: KM29N16000T/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Celi Array : 2M +64K x 8 bit - Data Register : (256 + 8) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: SBLF1630CT AND SBLF1640CT SCHOTTKY RECTIFIER VOLTA GE RANGE 30 and 40 Volts CURRENT -16.0 Amperes - FEATURES Isolated Plastic Package has Underwriters Flammability Classification 94V-0 Isolated overmolded package ige Metal to silicon rectifier, majority carrier con­

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

VN1304N2

Abstract: VN1306N2 VN1310N3
Contextual Info: ^ VN1304 ¿¿rsiLi N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) Order Number / Package BVdgs (max) (min) TO-243AA* TO-39 TO-92 40V 8Q 0.5A

N-Channel Depletion-Mode MOSFET

Contextual Info: LND250 P relim ina ry N-Channel Depletion-Mode MOSFET Ordering Information Order Num ber / Package Product marking for SOT-23: min TO-236AB* NDE* 1.0mA LND250K1 where * = 2-week alpha date code BVd s x / ^DS(ON) Idss B V dgx (max) 500V 1.0KQ *S am e as SO T-23. All units shipped on 3,000 piece carrier tape reels.

DN2635

Contextual Info: DN2635 DN2640 Prelim inary N-Channel Depletion-Mode Vertical DMOS FETs Orderina Informât on Order Number / Package b v d sx/ ^DS ON Id ss B^ dgx (max) (min) TO-92 DIE 350V 6.0Q 300mA DN2635N3 DN2635ND 400V 6.0Q 300mA DN2640N3 DN2640ND Features Advanced DMOS Technology

Contextual Info: VN2222LL N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v d ss/ ^D S O N ^D(ON) b v dgs (max) (min) TO-92 60V 7.5Q 0.75A VN2222LL Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement

MOSFET 4407 a

Abstract: MOSFET 4407 4406 mosfet 4407 mosfet mosfet 4407 8pin TC4407 c4407 4407E 4407M TC4406
Contextual Info: leluom Semiconductor, Inc. TC4406 TC4407 3A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The T C 4406 and T C 4407 are CM O S buffer-drivers constructed with com plem entary M OS outputs, w here the drains of the totem -pole output have been left separated so

Contextual Info: SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR FZT2222A ISSUE 3 - OCTOBER 1995_ FEATURES * 40 Volt VCE0 * Fast switching COMPLEMENTARY TYPE • PARTMARKtNG DETAIL - FZT2907A FZT2222A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

marking BSs sot23 siemens n-channel

Abstract: VN2110N3 marking BSs sot23 siemens
Contextual Info: U ,1 VN2106 VN2110 r* N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R dS ON BVdgs (max) 60V 100V Order Number / Package 4Q 4Q TO-92 20 Terminal Ceramic LCC Diet TO-236AB* Product marking for SOT-23: VN2106N3 VN2106NF VN2106ND