ST1603A Search Results

Contextual Info: csxa PHOTODARUNGTON OPTOCOUPLERS s m E u m s iic s H11B1 H11B2 H11B3 The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-fine package High current transfer ratio H1181 -500% mtn.

Contextual Info: E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N25, 4N26, 4N27, and 4N28 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide diode. t 1 8-3 6.86

switch H11B

Abstract: optocouplers H11B1 ST1736 H11B2 H11B ST1723
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS B m E u tm M c s H11B1 H11B2 H11B3 PACKAGE DIMENSIONS E&] DESCRIPTION Si [ft The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodariington transistor in a dual in-line package.

ST-2124

Abstract: ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf H11AG1 H11AG2
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS ft The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device

C1684 r .85 transistor

Abstract: 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS 0FT8ELECTB0HICS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS “T h e 4N 35,4N 36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS

transistor KJJ

Abstract: C-1248 C1243 C1248 C1250 C2079 MCT210 Phototransistor with base emitter CI242 C1256
Contextual Info: I5 Q PHOTOTRANSISTOR OPTOCOUPLER IPTOELEtTHIIICS MCT 210 DESCRIPTION PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.

Contextual Info: f i PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS II MCT2E PACKAGE DIMENSIONS DESCRIPTION T h e M C T 2E is a NPN silicon planar phototransistor db f i Æ optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS Utility/econom y isolator

Contextual Info: BQ PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS 1 MCT2 PACKAG E DIMENSIONS DESCRIPTION The M C T 2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting t t diode. • a SS I Œ 8.89 8.38 “ J FEATURES & APPLICATIONS

cmy17

Abstract: CHY17f-2 CMY17F-2 CHY17 cmy17f
Contextual Info: [SO PHOTOTRANSISTOR OPTOCOUPLERS 0 F Ï B E L E CIROKiCS CNY17F-1 CMY17F-2 CNY17F-3 DESCRIPTION PACKAGE DIMENSIONS rib rifa T h e CNY17 series consists of a Gallium A rsenide IRED coupled with an N P N phototransistor. FEATURES High isolation voltage 5 3 0 0 VAC R M S — 1 minute

K C2026 Y

Abstract: C2026 Y C2035 740L6000 c2026 c2026 semiconductor c2033 740L6011 C2036 k C2026
Contextual Info: E li HIGH-SPEED LOGIC-TO-LOGIC OPTOCOUPLERS OPTOELECTRONICS OPTO/LOGIC LSTTLto ORDER INFORMATION SYMBOL Buffer Inverter 740L6000 740L6001 740L6010 740L6011 FEATURES LOGIC COMPATIBILITY PART LOGIC OUTPUT NUMBER INPUT OUTPUT FUNCTION CONFIGURATION 740L6000 LSTTL

Contextual Info: K l PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11A1 H11A2 H11A3 H11A4 H11A5 PACKAGE DIMENSIONS DESCRIPTION The H11A series consists of a gallium arsenide infrared emitting diode, coupled with a silicon phototransistor in a dual in-line package. FEATURES

Contextual Info: [£Ö PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONI CS 3 CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSION! DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. WWW High isolation voltage 5300 VAC RMS— 1 m inute

GNY17-3

Abstract: CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor CNY17-2 C1243
Contextual Info: [«51 PHOTOTRANSISTOR OPTOCOUPLERS OPTOE L E CTRONI CS CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSIONS DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. rib rih rSi FEATURES 1.9 TYP ~ ï— 4.06 J twLTI

Contextual Info: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is

H11F2 equivalent

Abstract: C4615 H11F H11F1 bv46 8T20 H11F2 H11F3 R200A HIIFI
Contextual Info: PHOTO FET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 PACKAGE DIMENSIONS f l DESCRIPTION The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated

C1685 transistor

Abstract: C1684 r .85 transistor C1685 transistor c1684 C1680 C1681 TRANSISTOR C1685 C1679 C1682 C1683
Contextual Info: L y 1 • PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT2 PACKAGE DIMENSIONS DESCRIPTION The MCT2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS AC line/digital logic isolator

c1247

Abstract: C1246 c1252 MCT210 Phototransistor with base emitter CI242
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 DESCRIPTION PACKAGE DIMENSIONS j Sl ì u The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.

C1685 transistor

Abstract: transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271
Contextual Info: [ S PHOTOTRANSISTOR OPTOCOUPLER U OPTOELECTRONICS MCT271 DESCRIPTION PACKAGE DIMENSIONS & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.

Contextual Info: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.

Contextual Info: [sQ PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS CNY17F-1 CNY17F-2 CNY17F-3 DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. ift Æ f t FEATURES WWW High isolation voltage 5300 VAC RMS— 1 m inute

Contextual Info: [ s o PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS 4N32 4N33 PACKAGE DIMENSIONS DESCRIPTION The 4N32 and 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. ü l e Su ïl WWW FEATURES & APPLICATIONS 8.89 8.38

transistor c1713

Contextual Info: E U PHOTODARLINGTON OPTGCOUPUERS OPTS E L E C 1 S BÜI C S 4N32 4N33 The 4N32 and 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar pbotodarlington. • High isolation resistance-—10"ii ■ High dielectric strength, input to output 5300 V RMS 1

PFU1

Abstract: AS-3439
Contextual Info: [ • O PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS MOC8111 MOC8112 MOC8113 DESCRIPTION PACKAGE DIMENSIONS The MOC series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. Î Ä I w t S JU 1 _ L_ _ ip 8.89 8.38 FEATURES 0.2 High isolation voltage

C2079

Abstract: H11A H11A1 H11A2 H11A3 H11A4 H11A5 ST172
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11A1 H11A2H11A3 H11A4H11A5 PACKAGE DIMENSIONS DESCRIPTION The H11A series consists of a gallium arsenide infrared emitting diode, coupled with a silicon phototransistor in a dual in-line package. FEATURES W W W