H11A Search Results

H11AA814

Abstract: H11AA814A H11A817 H11A817A H11A817B H11A817C H11A817D 14 pin unknown ic
Contextual Info: 4–PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES PACKAGE DIMENSIONS DESCRIPTION The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.

MCT2E pin configuration

Abstract: optocoupler ic mct2e datasheet ic mct2e MCT2E optocoupler H11A1 optocoupler mct2e optocoupler MCT2E IC 4N25 4N26 4N27
Contextual Info: Phototransistor Industry Standard Single Channel 6 Pin DIP Optocoupler DEVICE TYPES Part No. CTR % Min. 4N25 20 4N26 20 4N27 10 4N28 10 4N35 100 4N36 100 4N37 100 4N38 10 H11A1 50 H11A2 20 H11A3 20 H11A4 10 H11A5 30 Dimensions in Inches mm Part No. MCT2

H11AA814A

Abstract: H11AA1 equivalent H11AA1 H11AA2 H11AA3 H11AA4 H11AA814 HMAA2705 HMHAA280 MOC256-M
Contextual Info: Optoelectronics Products Phototransistor Output; AC Sensing Input CTR @±1 mA IF % Part Number Min Max BVCEO(V) BVCBO(V) BVECO(V) tR/tF(µs) Min Min Min Typ VISOACRMS (kV) 1 minute 4-Pin Package H11AA814 20 300 35 NA 6 2.4/2.4 5.3 H11AA814A 50 150 35 NA

H11AG1

Abstract: H11AG2 H11AG3 MCT5210 phototransistor datasheet MCT5200 MCT5201 MCT5211
Contextual Info: Optoelectronics Products Phototransistor Output; Low Current DC Sensing Input CTR @≤10 mA IF % BVCEO(V) BVCBO(V) BVECO(V) tON/tOFF(µs) Min Max Min Min Min Max VISOACRMS (kV) 1 minute H11AG1 300 — 30 70 7 — 5.3 H11AG2 200 — 30 70 7 — 5.3 H11AG3

4N36

Abstract: 4N25 application notes 4N35 application note 4N35 applications H11A4
Contextual Info: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 WHITE PACKAGE -M SUFFIX 4N35 H11A4 4N36 H11A5 SCHEMATIC 6 1 4N28 H11A3 1 6 2 5 6 3 NC 4 1 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 BLACK PACKAGE (NO -M SUFFIX)

H11AV2

Abstract: H11AV1A H11AV1M
Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum

17434

Abstract: 343 "cross-reference" opto cross reference 4n35f 4n26f 94766 H11A1 "cross reference" 4N25M H11A4 4N35M
Contextual Info: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 WHITE PACKAGE -M SUFFIX 4N35 H11A4 4N36 H11A5 SCHEMATIC 6 1 4N28 H11A3 1 6 2 5 6 3 NC 4 1 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 BLACK PACKAGE (NO -M SUFFIX)

4n25 schematic

Abstract: 4n37 fairchild 4N25 CROSS H11A4 H11A1M
Contextual Info: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 WHITE PACKAGE -M SUFFIX 4N35 H11A4 4N36 H11A5 SCHEMATIC 6 1 4N28 H11A3 1 6 2 5 6 3 NC 4 1 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 BLACK PACKAGE (NO -M SUFFIX)

4N37 "cross reference"

Abstract: TD 6pin 4N35M
Contextual Info: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 WHITE PACKAGE -M SUFFIX 4N35 H11A4 4N36 H11A5 SCHEMATIC 6 1 4N28 H11A3 1 6 2 5 6 3 NC 4 1 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 BLACK PACKAGE (NO -M SUFFIX)

SEN 1327

Abstract: CI06B pnp phototransistor H11A10 1307 TRANSISTOR D34C1 SCR ci06b "Photo Interrupter" dual transistor H11B1 4N38
Contextual Info: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 1 1 2 2 2 2 I 5 1I 55 5 5 5 5 5 5 4 .4 .4 .4 1.0

Liteon PC817

Abstract: cosmo 817 CNY 817 PC123 Triac Liteon 4n33 toshiba PC817 4n33 4n25 datasheet 4N25 CROSS nec pc123 817 cosmo
Contextual Info: PHOTO COUPLER CROSS REFERENCE Transistor Output - DC Input KODENSHI SHARP PC-17T1 PC-17T2 PC-17T4 FAIRCHILD VISHAY NEC LITEON COSMO H11A817 K817P SFH615A SFH615AA SFH617A PS2501-1 PS2561-1 PS2571-1 LTV-816 LTV-817 -V LTV-819-1 LTV123 LTV-610 K1010 PS2501-2

H11AV2A

Abstract: h11av2 H11AV1A harris H11AV1 H11AV3 H11AV1A H11AV3A 0730-2P H11AV3T
Contextual Info: Optofsolator Specifications H11AV1, H11AV2, H11AV3, H11AV1A, H11AV2A, H11AV3A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I IAV series consists o f a gallium arsen id e, in fra re d em itting d io d e co u p led with a silicon p h o to tra n sisto r in a dual in-line

4N25SM

Abstract: 4N35M 4N25M 4N36M 4n25 4N26M 4N27M 4N28M 4N37M H11A1M
Contextual Info: 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M General Purpose 6-Pin Phototransistor Optocouplers Features Description • UL recognized File # E90700, Volume 2 The general purpose optocouplers consist of a gallium

optocoupler H11AA1

Contextual Info: H11AA1 Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, with Base Connection FEATURES • AC or polarity insensitive input A/C 1 6 B C/A 2 5 C NC 3 4 E • Built-in reverse polarity input protection • I/O compatible with integrated circuits

TIL112

Abstract: H11A1 H11A2 H11B1 H11B2 H11D2 H11D3 H11D4 MCA230 MCA255
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

H11AAB14

Abstract: H11AA814A H11AB17 H11AA
Contextual Info: OPTDELECTilOfitCS - , _B— . 4 -P IN PH OTO TRAN SISTO R OPTOCOUPLERS H 11A A 814 SERIES H 11A 817 SERIES DESCRIPTION PACKAGE D IM EN SIO N S .012 .30 .007(20) The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, con­

H11AV1

Contextual Info: MOTOROLA O rder this docum ent by H11AV1/D SEMICONDUCTOR TECHNICAL DATA & ® TO VDE UL CSA SETI SEMKO DEMKO NEMKO BABT H11AV1,A* H11AV2,A [C TR = 100% Min] GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output [C TR = 50% Min] 'M o to ro la Preferred Devices

Contextual Info: H11A1, H11A2, H11A3, H11A4, H11A5 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection A 1 6 B C 2 5 C NC 3 4 E FEATURES • Interfaces with common logic families • Input-output coupling capacitance < 0.5 pF • Industry standard dual-in line 6-pin package

78L033

Abstract: DB15 pcb connector female H11A 3.3v adapter db15 female to usb 78l03 H11A PDIUSBH11A VGA DB15 DB15 vga connector PDIUSBD11
Contextual Info: Philips Semiconductors Networking August 15, 2000 Philips H11A/D11 Evaluation Board User’s Manual Philips Semiconductors - Asia Product Innovation Centre Visit http://www.flexiusb.com

TIL112

Abstract: Phototransistor til 81 OF til 81 TIL115 TIL 143 TIL 115 H11A1 H11A2 H11B1 H11D2
Contextual Info: 1-20 Max Ratings @ T * = 25°C T ransistor Device No. Output Pd mW >C mA v CEO V Coupled Characteristics Diode Vr V If mA v iso kV Min Current Transfer Ratio ic / i F @If @V ce % mA V H11A1 Trans 250 100 30 3.0 60 2.5 50 10 10 H11A2 Trans 250 100 30 3.0 60

MCT2E

Abstract: H11A1 H24A1 H24A2 H24A3 H24A4 IS74 SFH609-1 SFH609-2 SFH609-3
Contextual Info: ISOCOM COMPONENTS Photo Transistor General Purpose 4 and 6 Pin DIP Part Number Current Transfer Ratio If = 10mA Min % Features Contin u ou s Forw ard Current Max (m A) 20 4 Pin P a ckage 75 H24A 4 50 H11A1 50 350 0 IL2 NEW 30 ( If= 1m A) 750 0 100 IS1 3.0

GE SC160B triac

Abstract: SC160B 3kw triac H11AG1 H11AG2 gemov relay 12v 100A C2079 H11AG3 ST2122
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 PACKAGE DIMENSIONS DESCRIPTION The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high current transfer ratio

BSI approved - Certificate No. 8001

Contextual Info: H11AV1X, H11AV2X, H11AV3X H11AV1, H11AV2, H11AV3 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l l l 2.54 7.0 6.0 VDE 0884 in 3 available lead form : - STD - G form

GE SC160B triac

Abstract: Y4W diode y4w transistor H11AG3 y4w surface transistor H11AG2 H11AG1 DIODE Y4W SC160B y4w 7
Contextual Info: G E S O L I» 01 STATE DE § 3 075D Û 1 D 0 M 7 0 5 optoelectronic specifications. T - H l - Z 3 Photon Coupled Isolator H11AG1, H11AG2, H11AG3 G a A1 A s In fra re d E m ittin g D io d e & N P N S ilicon P h o to -T ra n s isto r The G E Solid State H IIA G series consists o f a gallium arsenide infrared