H11F2 Search Results

Contextual Info: PHOTOFET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET

TRANSISTOR R46

Abstract: H11F1
Contextual Info: H11F1, H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No. E91231 DESCRIPTION The H11F_ series are optically coupled isolators consisting of infrared light emitting diode and a symmetrical bilateral silicon photodetector. The

H11F1

Abstract: H11F3 H11F2
Contextual Info: Optoelectronics Products Bilateral Analog FET Output; DC Sensing Input RDS Ω VBR(V) I46(nA) tON/tOFF(µs) ON Max OFF Min Min Max Max VISOACRMS (kV) 1 minute H11F1 200 300M 30 50 25/25 5.3 H11F2 330 300M 30 50 25/25 5.3 H11F3 470 300M 15 50 25/25 5.3 Part Number

Contextual Info: Optoisolator Specifications H11F1, H11F2, H11F3 Optoisolator GaAIAs Infrared Emitting Diode and Bilateral Analog FET T h e H l l F fam ily consists o f a g allium -alum inum -arsenide in frared em itting d io d e co u pled to a sym m etrical bilateral silicon p h o to d etecto r.

H11F1

Abstract: H11F3 E91231 H11F H11F2 H11F1X R46Note
Contextual Info: H11F1X, H11F2X, H11F3X H11F1, H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form DESCRIPTION The H11F_ series are optically coupled isolators

H11F1

Abstract: H11F3 data sheet book h11f1 sample E91231 H11F H11F2 TRANSISTOR R46
Contextual Info: H11F1, H11F2, H11F3 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No. E91231 DESCRIPTION The H11F_ series are optically coupled isolators consisting of infrared light emitting diode and a symmetrical bilateral silicon photodetector. The

H11F2 equivalent

Abstract: C4615 H11F H11F1 bv46 8T20 H11F2 H11F3 R200A HIIFI
Contextual Info: PHOTO FET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 PACKAGE DIMENSIONS f l DESCRIPTION The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated

H11f1 variable resistor 500k

Abstract: H11F1 300 H11F1300W h11f1 application H11F1
Contextual Info: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

H11F3

Abstract: H11f1 variable resistor 500k an 7511 500k variable resistor H11F1
Contextual Info: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

H11F11

Abstract: H11FS vy 5 fet
Contextual Info: EU PHOTO FET OPTOCOüPtERS m m tm a m cs H11F1 H11F2H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon pbotodetector. The detector is electrically isolated from the input and performs like an idea? isolated FET

H11f1 variable resistor 500k

Abstract: H11F1 variable resistor 500k H11F3 h11f1 application data sheet book h11f1 sample H11F2 H11F 5v 10mA reed relay data sheet book h11f1 pin
Contextual Info: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

H11F1

Abstract: H11f1 variable resistor 500k H74A1 H11F H11F2 H11F3 bv46
Contextual Info: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

H11F1 HARRIS

Contextual Info: 38 75 081 G E S O L I D ST A T E 01E 19728 Optoelectronic Specifications_ HA RR IS S E M I C O N D S E C T O R 37E D H11F1, H11F2, I 4 3 Ü2 27 1 O G S T n O IHAS b H11F3 Photon Coupled Bilateral Analog FET The GE Solid State H11F family consists of a gallium arsenide infrared emitting

ST206D

Abstract: H11F H11F1 15v reed relay low cost H11F2 H11F3
Contextual Info: Eü PHOTO FET OPTOCOUPLERS OPTO E L E C T R O N I C S H11F1 H11F2 H11F3 PACKAGE DIMENSIONS DESCRIPTION The H11F series has a gallium-alumirtum-arsenide infrared emitting diode coupled to a symmetrica! bilateral silicon photodetector. The detector is electrically isolated

H11F1M

Abstract: H11f1 variable resistor 500k Fairchild H11FxM Resistive Optocouplers H11F3M
Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical

11F2

Contextual Info: Optoisolator Specifications H11F1, H11F2, H11F3 Optoisolator GaAIAs Infrared Emitting Diode and Bilateral Analog FET T h e H I IF fam ily con sists o f a g alliu m -a lu m in u m -a rse n k le in fra re d e m ittin g d io d e co u p led to a sy m m etrical b ila te ra l silicon p h o to d e te cto r.

h11f1 application

Abstract: H11F1 40 FET Analog Devices
Contextual Info: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free

H11f1 variable resistor 500k

Abstract: h11f1 application IEC60747-5-2 H11F1M H11F2M data sheet book h11f1 pin data sheet book h11f1 sample variable resistor 500k H11F1SM H11F3M
Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical

H11f1 variable resistor 500k

Abstract: bv46 H11F1M Photo resistor any type reference designs for h11f1 H11F3M H11F2M band variable attenuators and AGC data sheet book h11f1 pin H11F3
Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical

h11f1m

Abstract: H11FXM Fairchild H11FxM H11FX H11F2M H11F3M H74A1 H11F1SVM
Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers tm Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≥ 99.9% linearity ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical

b13s7

Contextual Info: ISOCOfl COMPONENTS LTD 45E » • HfiflbSlQ 0Q0D23S fi « I S O T -4 1 -7 3 lf = 20mA < •r V b v ceo 2V Ij.= 1mA m O O VF o Ui Characteristics CD TRANSISTO R FAM ILY VCE|SAT| lp =100uA v CE= io v Test L -0 VCE SAT> lF = 20mA Ip= 20mA Ip= 20mA lc =40pA lc =125 iA 1c =175nA VCE=10V

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

moc3041 REPLACEMENT GUIDE

Abstract: MOC3041 replacement MOC303 is608
Contextual Info: ISOCOM COMPONENTS LTD ME D • ,m s l n 00Q023b 8 m i ^ Dual Channel 'T - h i -^5 G eneral Purpose Part Number Current Transfer Ratio IF = 10mA MIN <% Features Features ISD-1 ISD-5 ISD-74 MCT6 ; PIV LEO 10 pA Continuous Forward Current M AX mA) isolation

CNYI7F-3

Abstract: m0c811 SFH601-5 CNX82A SFH600-0 SFH600-1 SFH600-2 SFH600-3 SFH600-4 SFH601-2
Contextual Info: ISOCOM COMPONENTS Photo Transistor - Safety Approvals, VDE 0884, BSI, SETI and UL continued ‘ Note 1 Part Number Features Current Transfer Ratio Min (% ) SFH600-0 4 0 -8 0 SFH600-1 6 3 -1 2 5 CT R Test Conditions Con tinu ou s Forward Current M ax (mA)