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Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
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h11f1mh11f2mh11f3mh11fxm+1e90700
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H11F1M
Abstract: H11f1 variable resistor 500k Fairchild H11FxM Resistive Optocouplers H11F3M
Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
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h11f1mh11f2mh11f3me90700+4h11fxmh11f1 variable resistor 500kfairchild h11fxmresistive optocouplers
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H11f1 variable resistor 500k
Abstract: h11f1 application IEC60747-5-2 H11F1M H11F2M data sheet book h11f1 pin data sheet book h11f1 sample variable resistor 500k H11F1SM H11F3M
Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
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h11f1mh11f2mh11f3mh11fxm+8e90700h11f1 variable resistor 500kh11f1 applicationiec60747-5-2data sheet book h11f1 pindata sheet book h11f1 samplevariable resistor 500kh11f1sm
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H11f1 variable resistor 500k
Abstract: bv46 H11F1M Photo resistor any type reference designs for h11f1 H11F3M H11F2M band variable attenuators and AGC data sheet book h11f1 pin H11F3
Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
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h11f1mh11f2mh11f3mh11fxm+8e90700h11f1 variable resistor 500kbv46photo resistor any typereference designs for h11f1band variable attenuators and agcdata sheet book h11f1 pinh11f3
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h11f1m
Abstract: H11FXM Fairchild H11FxM H11FX H11F2M H11F3M H74A1 H11F1SVM
Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers tm Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≥ 99.9% linearity ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
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h11f1mh11f2mh11f3mh11fxm+4fairchild h11fxmh11fxh74a1h11f1svm
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soc1044
Abstract: SOC1044M H11Ax H11SBDXM_108R2 h11sbdxm H11LXM h11lxm5555r2 MOC3022 H11SADXM h11cx
Contextual Info: Date Created: 4/21/2004 Date Issued: 4/30/2004 PCN # 20033602-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.
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0033602-amocd213r2vmmocd217r1mmocd217r2vm+16mocd223r1mmocd223r2vmof4822300wsl5500300wsl5500ssl5501soc1044soc1044mh11axh11sbdxm_108r2h11sbdxmh11lxmh11lxm5555r2moc3022h11sadxmh11cx
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h11cx
Abstract: H11GXK H11Ax h11agx H11AD9X h11dx H11GD6X JESD22-110-B H11AD6X h11bd6x5422
Contextual Info: Date Created: 1/27/2004 Date Issued: 2/24/2004 PCN # 20034307-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.
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0034307-amoc8102moc81023smoc8102s+16moc8103moc81033smoc8103sdmoc8104300moc81043sdmoc8104wh11cxh11gxkh11axh11agxh11ad9xh11dxh11gd6xjesd22-110-bh11ad6xh11bd6x5422
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