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Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
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H11F1M
Abstract: H11f1 variable resistor 500k Fairchild H11FxM Resistive Optocouplers H11F3M
Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
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h11f1mh11f2mh11f3me90700+4h11fxmh11f1 variable resistor 500kfairchild h11fxmresistive optocouplers
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H11f1 variable resistor 500k
Abstract: h11f1 application IEC60747-5-2 H11F1M H11F2M data sheet book h11f1 pin data sheet book h11f1 sample variable resistor 500k H11F1SM H11F3M
Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
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h11f1mh11f2mh11f3mh11fxm+8e90700h11f1 variable resistor 500kh11f1 applicationiec60747-5-2data sheet book h11f1 pindata sheet book h11f1 samplevariable resistor 500kh11f1sm
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H11f1 variable resistor 500k
Abstract: bv46 H11F1M Photo resistor any type reference designs for h11f1 H11F3M H11F2M band variable attenuators and AGC data sheet book h11f1 pin H11F3
Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
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h11f1mh11f2mh11f3mh11fxm+8e90700h11f1 variable resistor 500kbv46photo resistor any typereference designs for h11f1band variable attenuators and agcdata sheet book h11f1 pinh11f3
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h11f1m
Abstract: H11FXM Fairchild H11FxM H11FX H11F2M H11F3M H74A1 H11F1SVM
Contextual Info: H11F1M, H11F2M, H11F3M Photo FET Optocouplers tm Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≥ 99.9% linearity ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
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h11f1mh11f2mh11f3mh11fxm+4fairchild h11fxmh11fxh74a1h11f1svm
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