ST1603 Search Results

Contextual Info: HIGH-SPEED AIGaAS SCHMITT TRIGGER OPTOCOUPLERS OPTOELECTRONICS H11N1 H11N2 H11N3 PACKAGE DIMENSIONS DESCRIPTION The H11N series has a medium-to-high speed integrated circuit detector optically coupled to a gallium-aluminumarsenide infrared emitting diode. The output incorporates

Contextual Info: PHOTOFET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET

C1847

Contextual Info: I HIGH-PERFORMANCE AIGaAs PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 I I MCT5210 MCT5211 PACKAGE DIMENSIONS DESCRIPTION The MCT-521X are high performance CMOS/LSTTL logic compatible phototransistor type optically coupled isolator products. They are constructed using a very low

MQC3023

Abstract: MOC3020 P
Contextual Info: I NON-ZERO-CROSSING TRIACS OPTOELECTRONI CS MOC3020 MOC3Û21 MOC3Q22 MOC3Q23 PACKAGE DIMENSIONS DESCRIPTION The MOC3020, MOC3021, M003022 and MOC3023 are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon bilateral

Contextual Info: csxa PHOTODARUNGTON OPTOCOUPLERS s m E u m s iic s H11B1 H11B2 H11B3 The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-fine package High current transfer ratio H1181 -500% mtn.

Contextual Info: E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N25, 4N26, 4N27, and 4N28 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide diode. t 1 8-3 6.86

switch H11B

Abstract: optocouplers H11B1 ST1736 H11B2 H11B ST1723
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS B m E u tm M c s H11B1 H11B2 H11B3 PACKAGE DIMENSIONS E&] DESCRIPTION Si [ft The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodariington transistor in a dual in-line package.

C1959

Abstract: C1957 transistor c1959 transistor IN5060 diode C1957 St1602 C1958 c1959 Y transistor transistor c1959 in5060
Contextual Info: [*u PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS 4N394N40 DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES & APPLICATIONS High efficiency, low degradation, liquid epitaxial LED

ST-2124

Abstract: ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf H11AG1 H11AG2
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS ft The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device

M0C3021

Abstract: MQC3021 MOC3020 applications circuits MQC3023 MQC3022 moc3020 triac driver M003022 MOC3020 MOC3CJ21 ST1603
Contextual Info: E Q NON-ZERO-CROSSING TRIACS OPTDELECIBBHICS MOC3020 M0C3021 MOC3022 MOC3023 DESCRIPTION PACKAGE DIMENSIONS The MOC3020, MQC3021, MQC3022 and MOC3Q23 are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon bilateral

C1684 r .85 transistor

Abstract: 100JjA optocouplers 4n35 25CC 4N35 4N36 4N37 C1684 transistor transistor c1684
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS 0FT8ELECTB0HICS 4N35 4N36 4N37 DESCRIPTION PACKAGE DIMENSIONS “T h e 4N 35,4N 36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS

transistor KJJ

Abstract: C-1248 C1243 C1248 C1250 C2079 MCT210 Phototransistor with base emitter CI242 C1256
Contextual Info: I5 Q PHOTOTRANSISTOR OPTOCOUPLER IPTOELEtTHIIICS MCT 210 DESCRIPTION PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.

transistor c2307

Abstract: c2307 C2303 C2309 H11AA1 equivalent ST1603 H11AA1 H11AA2 H11AA3 H11AA4
Contextual Info: AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AA1 H11AA3 H11AA2 H11AA4 PACKAGE DIMENSIONS DESCRIPTION The H11AAX family of devices has two GaAs emitters connected in inverse parallel driving a single silicon phototransistor output. FEATURES • Bi-polar emitter input

Contextual Info: f i PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS II MCT2E PACKAGE DIMENSIONS DESCRIPTION T h e M C T 2E is a NPN silicon planar phototransistor db f i Æ optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS Utility/econom y isolator

cmy17

Abstract: CHY17f-2 CMY17F-2 CHY17 cmy17f
Contextual Info: [SO PHOTOTRANSISTOR OPTOCOUPLERS 0 F Ï B E L E CIROKiCS CNY17F-1 CMY17F-2 CNY17F-3 DESCRIPTION PACKAGE DIMENSIONS rib rifa T h e CNY17 series consists of a Gallium A rsenide IRED coupled with an N P N phototransistor. FEATURES High isolation voltage 5 3 0 0 VAC R M S — 1 minute

K C2026 Y

Abstract: C2026 Y C2035 740L6000 c2026 c2026 semiconductor c2033 740L6011 C2036 k C2026
Contextual Info: E li HIGH-SPEED LOGIC-TO-LOGIC OPTOCOUPLERS OPTOELECTRONICS OPTO/LOGIC LSTTLto ORDER INFORMATION SYMBOL Buffer Inverter 740L6000 740L6001 740L6010 740L6011 FEATURES LOGIC COMPATIBILITY PART LOGIC OUTPUT NUMBER INPUT OUTPUT FUNCTION CONFIGURATION 740L6000 LSTTL

Contextual Info: K l PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11A1 H11A2 H11A3 H11A4 H11A5 PACKAGE DIMENSIONS DESCRIPTION The H11A series consists of a gallium arsenide infrared emitting diode, coupled with a silicon phototransistor in a dual in-line package. FEATURES

Contextual Info: [£Ö PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONI CS 3 CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSION! DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. WWW High isolation voltage 5300 VAC RMS— 1 m inute

GNY17-3

Abstract: CNV17 NPN C1685 c1685 C1685 npn GNY17 C1684 C1685 transistor CNY17-2 C1243
Contextual Info: [«51 PHOTOTRANSISTOR OPTOCOUPLERS OPTOE L E CTRONI CS CNY17-1 CNY17-3 CNY17-2 CNY17-4 PACKAGE DIMENSIONS DESCRIPTION The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. rib rih rSi FEATURES 1.9 TYP ~ ï— 4.06 J twLTI

ST2122

Abstract: H11AG1 H11AG2 H11AG3 GE-MOV 2N4256 C2079 gemov SC160B
Contextual Info: PHOTOTRANSiSTOR OPTOCOUPLERS DPTDELECTBflKICS ._ H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS •The H11AG series consists of a galiium-aluminumarsenide infrared emitting diode coupled with a silicon photoiransistor in a dual in-tine package. This device

Contextual Info: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is

Contextual Info: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 PACKAGE DIMENSIONS DESCRIPTION The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.

H11F2 equivalent

Abstract: C4615 H11F H11F1 bv46 8T20 H11F2 H11F3 R200A HIIFI
Contextual Info: PHOTO FET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 PACKAGE DIMENSIONS f l DESCRIPTION The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated

C1685 transistor

Abstract: C1684 r .85 transistor C1685 transistor c1684 C1680 C1681 TRANSISTOR C1685 C1679 C1682 C1683
Contextual Info: L y 1 • PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT2 PACKAGE DIMENSIONS DESCRIPTION The MCT2 is a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEATURES & APPLICATIONS AC line/digital logic isolator