H11AG Search Results

H11AG1

Abstract: H11AG2 H11AG3 MCT5210 phototransistor datasheet MCT5200 MCT5201 MCT5211
Contextual Info: Optoelectronics Products Phototransistor Output; Low Current DC Sensing Input CTR @≤10 mA IF % BVCEO(V) BVCBO(V) BVECO(V) tON/tOFF(µs) Min Max Min Min Min Max VISOACRMS (kV) 1 minute H11AG1 300 — 30 70 7 — 5.3 H11AG2 200 — 30 70 7 — 5.3 H11AG3

GE SC160B triac

Abstract: SC160B 3kw triac H11AG1 H11AG2 gemov relay 12v 100A C2079 H11AG3 ST2122
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 PACKAGE DIMENSIONS DESCRIPTION The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high current transfer ratio

GE SC160B triac

Abstract: Y4W diode y4w transistor H11AG3 y4w surface transistor H11AG2 H11AG1 DIODE Y4W SC160B y4w 7
Contextual Info: G E S O L I» 01 STATE DE § 3 075D Û 1 D 0 M 7 0 5 optoelectronic specifications. T - H l - Z 3 Photon Coupled Isolator H11AG1, H11AG2, H11AG3 G a A1 A s In fra re d E m ittin g D io d e & N P N S ilicon P h o to -T ra n s isto r The G E Solid State H IIA G series consists o f a gallium arsenide infrared

ST-2124

Abstract: ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf H11AG1 H11AG2
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS ft The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device

GE SC160B triac

Abstract: C203B varistor 7k 270 H11AG1 H11AG2 H11AG3 dt230h
Contextual Info: “g e solid state 01 De | 3 0 7 5 0 0 1 0 0 1 ^ 7 0 2 o p t o e le c t r o n ic S p e c if ic a t io n s T-qi-83 Photon Coupled Isolator H11AG1, H11AG2, H11AG3 j-1 . Ga Al As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H llAG series consists of a gallium arsenide infrared 3

H11AG1M

Abstract: CC 4093 N 1N4148 74HC14
Contextual Info: H11AG1M Phototransistor Optocoupler Features Description • High efficiency low degradation liquid epitaxial IRED The H11AG1M device consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device

1N148 diode

Abstract: 2N4256 1N148 H11AG1 H11AG h11ag3 SC160B H11AG2 IC 4093 BE IC 4093
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS H11AG1 H11AG2 H11AG3 DESCRIPTION The H11AG series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer

74HC14 marking code

Abstract: h11agx H11AG1M
Contextual Info: H11AG1M, H11AG2M, H11AG3M Phototransistor Optocouplers tm Features Description • High efficiency low degradation liquid epitaxial IRED The H11AGXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device

ST2122

Abstract: H11AG1 H11AG2 H11AG3 GE-MOV 2N4256 C2079 gemov SC160B
Contextual Info: PHOTOTRANSiSTOR OPTOCOUPLERS DPTDELECTBflKICS ._ H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS •The H11AG series consists of a galiium-aluminumarsenide infrared emitting diode coupled with a silicon photoiransistor in a dual in-tine package. This device

H11AG1

Abstract: 1N148 diode 1n148 SC160B 2N4256 H11AG3 IC 4093 H11AG2 datasheet of IC 4093 H11AG
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11AG series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current.

1n148

Abstract: 1N148 diode SC160B 74HC14 marking code 2N4256 H11AG1 h11ag3 H11AG2 IC 4093 C203D
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS H11AG1 H11AG2 H11AG3 DESCRIPTION The H11AG series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer

H11AG3

Abstract: SC160B
Contextual Info: Optoisolator Specifications H11AG1, H11AG2, H11AG3 Optoisolator GaAIAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I 1AG ser ie s c o n sists o f a galliu m a lu m in u m a r se n id e infrared em itting d io d e co u p le d with a silic o n p h ototran sistor in a dual in-line

74HC14 marking code

Abstract: H11AG1M 1N4148 74HC14 Phototransistor optocoupler 210 optocoupler H11AG1
Contextual Info: H11AG1M Phototransistor Optocoupler tm Features Description • High efficiency low degradation liquid epitaxial IRED The H11AG1M device consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device

SC160D

Abstract: EH11A
Contextual Info: 3875081 G E S O L I D STATE 01E o p to e le c tro n ic S p e c ific a tio n s - 19702 • 4 1 -8 3 37E J> HARRIS SEMCOND SECTOR m 4302271 t a HAS 0D 271 b4 Photon Coupled Isolator H11AG1, H11AG2, H11AG3 G a A l A s In fra re d E m ittin g D io d e & N P N S ilic o n P h o to - T ra n s is to r

H11AG1M

Contextual Info: H11AG1M Phototransistor Optocoupler Features Description • High efficiency low degradation liquid epitaxial IRED The H11AG1M device consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device

eh11a

Abstract: H11AG3
Contextual Info: Optoisolator Specifications H11AG1, H11AG2, H11AG3 Optoisolator GaAIAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e H I 1AG s e rie s c o n sis ts o f a g a lliu m a lu m in u m a r s e n id e in f r a r e d e m ittin g d io d e c o u p le d w ith a s ilic o n p h o to tr a n s is to r in a d u a ! in -lin e

NEC 10F triac

Abstract: TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin
Contextual Info: 2008-3 PRODUCT GUIDE Photocouplers and Photorelays s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Product Index Part Number Package Output Page TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP117

Contextual Info: Generic Optoisoiator Specifications MCT2, MCT2E, MCT26 Optoisoiator GaAs Infrared Emitting Diode Phototransistor T h e MCT2, M CT2E a n d MCT26 are gallium arsen id e, in frared em itting dio d e coupled with a silicon phototransistor in a du al in-line package. T h e se devices are also available in

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

p421 coupler

Abstract: MOC604A CNY17-3Z TLP250 MOSFET DRIVER application note TLP250 MOSFET DRIVER p421 Photocoupler CNY17-2Z TRANSISTOR AC125 TLP181 SMD 11-4C1 TYPE moc3041 application note
Contextual Info: Photocouplers PRODUCT GUIDE New Products •Photorelay T The TLP227GA Series of general-purpose photorelays features devices whose OFF-state voltage 400 V is superior to that of TLP227G Series devices (350 V). This superior OFF-state voltage allows larger safety

Contextual Info: flU A L IT Y TECH N OLOGIES CORP S7E ]> 0004344 Generic Optoisolator Specifications _ 3bT • flT Y MCT2, MCT2E, MCT26 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e MCT2, M CT2E a n d MCT26 are gallium arsen id e, infrared em itting diode coupled with a silicon phototransistor

TLP635

Abstract: p421 coupler TLP639 P181 Photocoupler p421f tlp250 application note P521 Photocoupler p421 Photocoupler TLP636 tpl 620-2
Contextual Info: 2004-2 PRODUCT GUIDE Photo Couplers and Photo Relays semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Preface Recently photocouplers have been one of the most popular isolation devices used for noise protection in various electronic equipment. TOSHIBA's photocouplers incorporate into a white mold package, a combination of either GaAs infrared

mcp3021z

Abstract: P621GB DPC817B DPC-817B p621g P620GB p620-gb TLP622 621-4G Toshiba P521 Photocoupler
Contextual Info: PHOTOCOUPLER CROSS REFERENCE For user’s convenience, the Sharp equivalents in comparison with the other m anufacturers’ products are suggested in this list. The data is prepared on the basis of main electrical and mechanical characteristics, however, Sharp assumes no responsibility for the actual use of the data and for the specifications of other

4h11g

Abstract: 1LD610-3 PC716 "cross reference" TIL119 "cross reference" TIL117 "cross reference" PC713 1LD2 1LD610-2 1LD5 IC 4N25
Contextual Info: cross reference Lum en 0 C P -P C TB 116/X 0 C P -P C TB 116/X 0 C P -P C TB 116/X 0 C P -P C TB 116/X 0 C P -P C TB 116/X 0 C P -P C D B 116/X 0C P -P C D B 1 16 /X 0 C P -P C D B 116/X 0C P -P C D B 1 16 /X 0C P -P C D B 1 16 /X 0C P -P C D B 1 16 /X 0C P -P C D B 116/X