c 337 25
Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3
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c 337 25sc160dtic 2160 triacv130he150+6general electric scr c220es54494533 gem2n4401 2n3904 2222a1n21es5451
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A114F
Abstract: A114A A114N A114F GE A114B MPR12 MPR15 GER4007 DT230B ge a114d
Contextual Info: SILICON RECTIFIERS LOW CURRENT .25 TO 3 AMPERES JEDEC GE TYPE _ — — DT230 MPR10-15 A14A-P t N5059 62 1N4245-49 — -GER4001 -7 1N5624-27 — — fil !iA-N ELECTRICAL SPECIFICATIONS A @ V r M ( r e p ) - I fM ¡surge) T a {° C ) .25 .5 SO 100 —
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1n50591n4245-491n5624-27dt230+15mpr10-15a14a-pger4001m14a-mdt230fa114fa114aa114na114f gea114bmpr12mpr15ger4007dt230bge a114d
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SS321
Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package
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ma1703ma1704ss321ss322+9ss324ss325ss334ss337se708dz800d07 15dt230ahpixp2350adt
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SS321 equivalent
Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4
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ma1703ma1704ss321ss322+13ss324ss325ss334ss337se708dz800ss321 equivalentdiode 1n91481n43071n4532diode 1n36052n2222 chip2n2369 transistor
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GE SC160B triac
Abstract: SC160B 3kw triac H11AG1 H11AG2 gemov relay 12v 100A C2079 H11AG3 ST2122
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 PACKAGE DIMENSIONS DESCRIPTION The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high current transfer ratio
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h11ag1h11ag2h11ag3h11ag+9c2079st2125d00b225ge sc160b triacsc160b3kw triacgemovrelay 12v 100ast2122
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ST-2124
Abstract: ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf H11AG1 H11AG2
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS ft The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device
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h11ag1h11ag2h11ag3h11ag+9st1603ast-2124st2122varistor xf 040sc160b3kw triacge sc160b triacc2079varistor xf
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GE SC160B triac
Abstract: C203B varistor 7k 270 H11AG1 H11AG2 H11AG3 dt230h
Contextual Info: “g e solid state 01 De | 3 0 7 5 0 0 1 0 0 1 ^ 7 0 2 o p t o e le c t r o n ic S p e c if ic a t io n s T-qi-83 Photon Coupled Isolator H11AG1, H11AG2, H11AG3 j-1 . Ga Al As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H llAG series consists of a gallium arsenide infrared 3
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t-qi-83h11ag1h11ag2h11ag3+4ge sc160b triacc203bvaristor 7k 270dt230h
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1N148 diode
Abstract: 2N4256 1N148 H11AG1 H11AG h11ag3 SC160B H11AG2 IC 4093 BE IC 4093
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS H11AG1 H11AG2 H11AG3 DESCRIPTION The H11AG series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer
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h11ag1h11ag2h11ag3h11ag+8e90700ds3002131n148 diode2n42561n148sc160bic 4093 beic 4093
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A114D
Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)
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ma1703ma1704ss321ss322+13ss324ss325ss334ss337se708dz800a114da114fdt230bdt230fstb-568ger4007a114n
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D035
Abstract: DT230A D0-35 D035 package 1N4830 1N4150 1N4450 1N4606 1N4607 1N460B
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Part Number BV @ 1OOü A Min. V 1N4451 40 1N4607 85 Ir @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.
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ST2122
Abstract: H11AG1 H11AG2 H11AG3 GE-MOV 2N4256 C2079 gemov SC160B
Contextual Info: PHOTOTRANSiSTOR OPTOCOUPLERS DPTDELECTBflKICS ._ H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS •The H11AG series consists of a galiium-aluminumarsenide infrared emitting diode coupled with a silicon photoiransistor in a dual in-tine package. This device
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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je1100mfc8040mfc8030mc1316+6triac 9707schematic of mc1466transistor mje 5332je 3055 motorolamcr407-2mc1466
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diode A14A
Abstract: A14A A14P Rectifier A15A diode A115m diode a15a ge a15a 1N4150 1N4450 1N4606
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.
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H11AG1
Abstract: 1N148 diode 1n148 SC160B 2N4256 H11AG3 IC 4093 H11AG2 datasheet of IC 4093 H11AG
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11AG series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current.
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h11agh11ag1e90700h11ag2+8h11ag3ds3002131n148 diode1n148sc160b2n4256ic 4093datasheet of ic 4093
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114fd6666 diodediode by1001n4q07ba100 diodeby164bb139bay38diode aa1191s184 diode1n82
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ST2123
Abstract: P02M ic cmos 4090 H11AG1 H11AG2
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS im m e lm it i H11AG1 H11AG2 H11AG3 TTie H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupted with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high currant transfer ratio
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h11ag1h11ag2h11ag3h11ag+3st2123p02mic cmos 4090
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D035
Abstract: Bv 42 transistor STB567 D035 package 1N4150 1N4450 1N4606 1N4607 1N460B DT230C
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 Ir Vf @ 25°C Max. 1 <nA) Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package T»pe Package Outline No.
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1N4150
Abstract: 1N4450 1N4606 1N4607 1N460B D035 DT230C DT230H JS-2-65-11
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.
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TRANSISTOR 2n3901
Abstract: MPD300 mpd200 1N4156 2N2368 2N3973 1N4150 1N4450 1N4606 1N460B
Contextual Info: SIGNAL DIODES 100 - 200 MA TYPES 200 - 400 MA TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.
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in4606
Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
Contextual Info: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.
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BYX71-600
Abstract: BYX71-350 philips BYX71-600 BY208 BYX71 MDA2501 Solitron J775-2 30S8 BY198 GI DL005
Contextual Info: RECTRON SEMICONDUCTOR INDUSTRIAL Part No. 40266 40267 1.5KE10 1.5KE10 1.5KE10 1.5KE100 1.5KE100 1.5KE100 1.5KE100A 1.5KE100A 1.5KE100A 1.5KE10A 1.5KE10A 1.5KE10A 1.5KE11 1.5KE11 1.5KE11 1.5KE110 1.5KE110 1.5KE110 1.5KE110A 1.5KE110A 1.5KE110A 1.5KE11A 1.5KE11A
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5ke105ke1005ke100a5ke10a+10byx71-600byx71-350philips byx71-600by208byx71mda2501solitron j775-230s8by198gi dl005
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BA100 diode
Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any
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a4/10a5/62a5/105a1000+16aa100aa110aa111aa112aa113aa114ba100 diodeba102aay20b2m1-51n2528ph1021oa210 diodediode aa116bb105gaz17
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