DZ800 Search Results

Contextual Info: TechnischeInformation/TechnicalInformation DZ800S17K3 IGBT-Module IGBT-modules 62mmC-SerienModulmitEmitterControlled³Diode  Diode,Wechselrichter/Diode,Inverter VorläufigeDaten/PreliminaryData

DZ800S17K3

Abstract: FF800R17KE3
Contextual Info: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Emitter Controlled³ Diode 62mm C-series module with Emitter Controlled³ diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data

DZ800S17K3

Contextual Info: Technische Information / technical information DZ800S17K3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit EmCon3 Diode 62mm C-series module with EmCon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values

JANTX 1N916

Abstract: diode 1n4446 DA-Series 1n4148 D035 1N4532 1N916 JANTX general electric 1n4727 1N4148.1N4448 1N4148 1N4151
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25 20

SS321

Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package

LN4863

Abstract: 1N4532 IN430 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B
Contextual Info: SILICON S I G N A L DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

A114D

Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)

in4151

Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N 914A 1N 914B BV @ 100/1A Min. V I r @ 2 5 °C Max. (ri A) @ V r (V ) V f Max. (V ) @ I f (m A ) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Number 100 100 25 30 1.00 10 4 25 20 1.00

bsm 300 ga 160 dn

Contextual Info: BYM 600 A 170 DN2 Diode Power Module • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 E 3166 Type VR25 IFDC BYM 600 A 170 DN2 1700V 600A Package Ordering Code

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

DIODO 1N4148

Abstract: diodo 1N914 1N4532 2 935 diodo in4727 1N4727 1N4148 1N4149 DZ806 1N4152
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N 914 1N 914A 1N 9 1 4 B BV @ 100/1A Min. V I r @ 25°C Max. (ri A) @ V r (V) V f Max. (V) @ I f (m A) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Num ber 100 100 25 30 1.00 10 4 25 20 1.00

in4305

Abstract: diode 1n4305 1n4148 D035 1N4532 JANTX 1N916 1N4148 1N4149 1N4151 1N4152 1N914
Contextual Info: SILICON S I G N A L DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25

DIODe IN4446

Abstract: in4447 in4449 IN4I48 1n914 equivalent in4448 JANTX 1N916 1n916 equivalent IN4446 1N916 JANTX
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20

DE113 silicon diode

Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
Contextual Info: SILICON S I G N A L DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25

in4727

Abstract: 6RW51 pico amp meter 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A
Contextual Info: SILICON S I G N A L DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25

Contextual Info: BYM 600 A 170 DN2 Diode Power Module • Inside fast free-wheeling diode • Package with insulated metal base plate • Diode especially for brake choppers • matched with BSM 300 GA 170 DN 2 E 3166 Type VR25 IFDC BYM 600 A 170 DN2 1700V 600A Package Ordering Code

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1n4148 D035

Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N 914 1N 914A 1N 9 1 4 B BV @ 100/1A Min. V I r @ 25°C Max. (ri A) @ V r (V) V f Max. (V) @ I f (m A) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Num ber 100 100 25 30 1.00 10 4 25 20 1.00

MIL-S-19500C

Abstract: IN4444 MIL-S-19500 1N4532 D035 in4445 1N4148 1N4149 IN4305 1N4152
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N914 1N914A 1N914B BV @ 100/1A M in. V I r @ 25°C Max. (ri A) @ V r (V) V f Max. (V) @ I f (m A) Co @ DV (pf) trr (77SEC) Package Outline Package O utline Number 100 100 25 30 1.00 10 4 25 20 1.00 20 4 100

in4447

Abstract: IN4446 in4449 DIODe IN4446 1n914 equivalent IN4I48 in4448 IN4305 1N4148 1N4149
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Part N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M ax. (ri A ) @ V r (V ) V f (V ) M ax. @ I f (m A ) Co @ DV (pf) 1N 914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N 914B 100 25 20 1.00 100 1N 916 100 25 20

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any