1N4149 Search Results

1N4447

Contextual Info: TYPES 1N4148. 1N4149, IN U M i : ^ 4 i9 SILICON SWITCHING DIODES B U L L E T IN NO. D L-S 739269, O C T O B E R 1 9 6 6 - R E V I S E D M A R C H 1973 FA ST S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents: 1N4148 . . . 1N914 . .

Contextual Info: DIGITRON SEMICONDUCTORS 1N4149, 1N4151-1N4154, 1N4446-1N4449 SWITCHING RECTIFIER MAXIMUM RATINGS @ 25°C Parameter Symbol 1N4149 1N4151 1N4152 1N4153 VRM 75V 75V 40V 75V Peak reverse voltage Average rectified current IO Forward surge current, 8.3ms Operating junction temperature range

1N4149

Abstract: 1N4150 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: CE 1N914 THRU 1N4454 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end

1N4149

Contextual Info: 1N4149 HIGH SPEED SWITCHING DIODE DO - 35 PRV : 100 Volts Io : 150 mA FEATURES : * * * * * * Silicon Epitaxial Planar Diode High reliability Low reverse current Low forward voltage drop High speed switching Pb / RoHS Free 1.00 25.4 min. 0.079(2.0 )max. 0.150 (3.8)

Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature

1N4149

Abstract: 1N4150 1N4151 1N4152 1N4153 1N4447 1N4449 1N914 1N44491
Contextual Info: 1N 914 .1N 4454 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also availble in glass case DO-34. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Dimensions in mm Dimensions in mm

1N4149

Contextual Info: 1N4149 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 500 mA IFSM Non-repetitive Peak Forward Surge Current

1N4148S

Abstract: d7800 N444 1N4149S 150D 1N4154S 1N4446S 1N4447S 1N4448S 1N4449S
Contextual Info: 1N4148S, 1N4149S, 1N4154S, 1N4446S to 1N4449S Silicon Epitaxial Planar Diodes Silicon Epitaxial Planar Diodes for general purposes and fast switching applications. x .1.9 0 »o> These diodes are delivered taped see page 4 . Cathode Mark m a x . 0.42 f Glass case JEDEC DO-34

1n4149

Abstract: 1N4153 silicon diodes 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature

1N4447

Contextual Info: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and is very popular for general purpose switching applications.

IN4149

Abstract: IN4154 DIODe IN4446 1N4446 in4448 4N* diode 1N4447 LN4149 1N4154 1N4149
Contextual Info: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES • M e ta llu rg ic a l Bond • Planar Passivated • DO-35 DESCRIPTION This se rie s o ffe rs M e ta llu rg ic a l B onding and Is very pop u lar fo r general purpose

1N4149DCSM

Abstract: 1N4149qCSM
Contextual Info: SEME 1N4149CSM LAB MECHANICAL DATA Dimensions in mm inches SILICON EPITAXIAL PLANAR DIODE 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006) 3 1 1.91 ± 0.10 (0.075 ± 0.004) A 0.31 rad. (0.012) 3.05 ± 0.13

ALL4150

Abstract: 1N4606
Contextual Info: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current

ITT9014C

Abstract: TCA700Y ITT9013H jc5010 PVPU2204 TCA700 TVP02066 SAA1094-2 SAK215 itt8050cu
Contextual Info: Alphanumerical List of Types Type Page 1N914 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4148 1N4148S 1N4149 1N4149S 1N4150 1N4150S 1N4151 1N4151S 1N4448 1N4448S 1N4454 1N4454S 1N4731 to 1N4764 1N5226 to 1N5262 1N5226S to 1N5262S 1N5817 1N5817M 1N5818

1N4149

Abstract: 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature

1n4149

Contextual Info: 1N4149 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 100 V IF AV Average Rectified Forward Current 500 mA IFSM Non-repetitive Peak Forward Surge Current

d1n914

Abstract: bb204b BAV10
Contextual Info: 10 Small Signal Leaded Devices Switching Diodes D 1N914 1N914A 1N914B 1N916 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N4446 1N4448 1N4449 1N4531 1N4532 BAS 11 BAV10 BAV18 BAV19 BAV20 BAV21 Pkg Vr V «F (mA) VF DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35

1N4149

Abstract: 1N4151 1N4152 1N4154 1N4447 1N4449 1N4450 1N4454
Contextual Info: 1N4149.1N4454 SILICON EPITAXIAL PLANAR DIODES for General Purpose and Switching Max. 0.5 Max. 0.45 Min. 27.5 Max. 1.9 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand Black Cathode Band XXX Black Part No. Max. 3.9 ST XXX Max. 2.9 Min. 27.5

LL4149

Abstract: Diode 1n4149 1N4149 1N4149M
Contextual Info: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N4149 1N4149M LL4149 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics S ym bol t a = 25°c unless otherwise noted.) P aram eter L im its T est C o n d itio n

IN4149

Abstract: 1N4149 ic 1N4148 diodes IN4148 1N4148 IN4148 DO-35 716-0422
Contextual Info: IN4148, IN4149 • G EN ERA D E S C R IP T IO N O U T L IN E D R A W IN G The fam ily of 1N4148, 1N4149 are the silicon epitaxial planar diodes that provide low capacitance, high conductance, and fast reverse recovery. W ith these features, the devices are

Contextual Info: 1N4149 Small Signal Switching Diode. Peak Reverse Voltage VRM = 100 V. Maximum . Page 1 of 1 Enter Your Part # Home Part Number: 1N4149 Online Store 1N4149 Diodes Small Signal Switching Diode. Peak Reverse Voltage Transistors Integrated Circuits VRM = 100 V. Maximum Average Rectified Current IAV =

jedec Package do

Contextual Info: noNm •JEDEC Standard <Absolute maximum ratings> >f s m Part No. V rm V Vr (V) Ifm (mA) to (mA) Ip (mA) 1n 8 (A) P (mW) Tj Topr Tstg CO Cc) Cc) Package 1N4148 1N914 100 75 450 150 200 2 500 200 - 6 5 - + 200 - 6 5 — + 200 DO-35 1N4149 1N916 100 75 450

11202-1

Abstract: mil-prf-19500 1n4151
Contextual Info: 1N4149-1,51-1,54-1 & 1N4446-1 – 1N4449-1 Available Screening in reference to MIL-PRF-19500 available Computer Switching Diode DESCRIPTION These popular 1N4149, 1N4151, 1N4154 and 1N4446 – 1N4449 series of JEDEC registered switching/signal diodes are available with internal metallurgical bonded construction. These

DO-35 PACKAGE

Abstract: DSAIH000251
Contextual Info: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446