1N4153 Search Results

75V 150mA Diode

Contextual Info: COMPUTER DIODE 1c i r 150mA Switching Diode vy i" 1N4153, JAN, JANTX & JANTXV I N 4153 1N4534, JAN, JANTX & JANTXV 1N4534 FEATURES • • • • DESCRIPTION This device is particularly suited to applications where tightly controlled forward characteristics and fast recovery

Contextual Info: DIGITRON SEMICONDUCTORS 1N4149, 1N4151-1N4154, 1N4446-1N4449 SWITCHING RECTIFIER MAXIMUM RATINGS @ 25°C Parameter Symbol 1N4149 1N4151 1N4152 1N4153 VRM 75V 75V 40V 75V Peak reverse voltage Average rectified current IO Forward surge current, 8.3ms Operating junction temperature range

Contextual Info: Silicon Switching Diode i 1N4153 • fe0-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features • • • • • • DO-35 Glass Package nominal dimensions

IN4153

Abstract: 1N4153 1N4153-1 IN4153-1
Contextual Info: JAN, JANTX, •1N4153 and 1N4153-1 AVAILABLE IN AND JANTXV 1N4153 and 1N4153-1 PER MlL-PRF-19500/337 'SW ITCHING DIODES 'H E R M ETIC A LLY SEALED ' METALLURGICALLY BONDED ' DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Ju n ctio n T e m p e ra tu re : -6 5°C to + 17 5°C

in4151

Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134
Contextual Info: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.

1N4153UR-1

Abstract: CDLL4153 DO-213AA LL34
Contextual Info: 1N4153UR-1 CDLL4153 • 1N4153UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/337 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

in4153

Abstract: c 337 25 1N4153 1N4153-1 D0-35
Contextual Info: • 1N4153 and 1N4153-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/337 1N4153 and 1N4153-1 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C

1N4448R

Contextual Info: 1N4148 1N914 1N 916 1N4150 1N4153 1N4448 1N4606 These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. Features • Dimensions Units : mm CATHODE BAND ¿0.5±0.1 V available in DO-35 package c • part marking, see following table

in4153

Abstract: DIODE SOD-80 JANTX IN4153UR-1
Contextual Info: • 1N4153UR-1 AVAILABLE IN JAN, 1N4153UR-1 CDLL4153 JANTX, AND JANTXV PER MIL-PRF-19500/337 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C

1N4153

Abstract: JANTXV1N4153 ADE 617
Contextual Info: COMPUTER DIODE JAN, JANTX & JANTXV 1N4153 150mA Switching Diode FEATURES • • • • • DESCR IPTIO N M etallurgical Bond Qualified to MIL-S-19500/337 Planar Passivated C h ip DO-35 Package Non-JAN Available This device is particularly suited to applications where tigh tly controlled

diode smd ED 84

Abstract: DSAIH00025343 SMD 437 diode
Contextual Info: Silicon Switching Diode 1N4153 DO-35 Glass Package Applications Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. Features DO-35 Glass Package nominal dimensions Six sigma quality

1N4153

Contextual Info: 1N4153 SILICON EPITAXIAL PLANAR SWITCHING DIODE Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Repetitive Reverse Voltage

smd 2U 75 diode

Abstract: SMD DIODE 2U
Contextual Info: Silicon Switching Diode Applications 1N4153, 1N4153-1 i DO-35 Glass Package Used in general purpose applications,w here a low current controlled forward characteristic and fast switching speed are important. Features • • • • • • • Six sigm a quality

1N4153

Abstract: LM390
Contextual Info: 1N4153 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N4153 Availability Online Store

in4151

Abstract: IN4150 IN4153 diode IN4153 N4150 1N4151 1N4153 1N4150 IEC134 colourcoded diodes
Contextual Info: • bbSB'm 1N4150 1N4151 1N4153 OOEb'îOB 202 H A P X N APIER P HILI PS/D ISCR ETE b^E » ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.

JX4153

Abstract: JV4153 1N4153-1 1N4153UR-1 1N4534 J-1N4148 diode MARKING CODE jx 337K
Contextual Info: INCH-POUND MIL-PRF-19500/337K w/AMENDMENT 2 15 July 2010 SUPERSEDING MIL-PRF-19500/337K w/AMENDMENT 1 25 January 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4153-1, 1N4153UR-1, 1N4153UB, 1N4153UBCA, 1N4153UBCC, 1N4153UBD,

GE 7252

Abstract: JANTXV1N4532 JAN1N4153-1 JANTX1N4150-1
Contextual Info: Signal/General Purpose Diodes PartNum ber SIG JANTXV1N4532 1N4153 1N4153 1N4153-1 1N4153-1 1N4153 1N4153-1 1N4153-1 1N4153UR-1 1N4153 1N4153-1 1N4153-1 1N4153UR-1 1N4154 BAV70 BAW5S 1N3600 1N4151 MLL4150-1

1N4153-1

Abstract: 337 SMD 1N4150 1N4153
Contextual Info: 1N4153, Silicon Switching Diode 1N4150 Applications DO-35 Glass Package 1N4153-1 Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Six sigma quality

1N4153

Abstract: 1N4153M LL4153
Contextual Info: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N4153 1N4153M LL4153 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics S ym bol t a = 25°c unless otherwise noted.) P aram eter L im its T est C o n d itio n

1N4153

Contextual Info: 1N4153 SILICON EPITAXIAL PLANAR DIODE Absolute Maximum Ratings* Ta = 25oC Characteristic Symbol Maximum Repetitive Reverse Voltage Value Unit VRRM 75 V IFSM 1.0 4.0 A IF(AV) 200 mA Power Dissipation Ptot 500 mW Thermal Resistance, Junction to Ambient RθJA

Contextual Info: 1N4153+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current150m V(RRM)(V) Rep.Pk.Rev. Voltage75 t(rr) Max.(s) Rev.Rec. Time2n @I(F) (A) (Test Condition)10m @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage550m @I(FM) (A) (Test Condition)100n

1N4150

Abstract: 1N4151 1N4150 Philips 1N4153 MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4150; 1N4151; 1N4153 High-speed diodes Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N4150; 1N4151; 1N4153

d1n914

Abstract: bb204b BAV10
Contextual Info: 10 Small Signal Leaded Devices Switching Diodes D 1N914 1N914A 1N914B 1N916 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N4446 1N4448 1N4449 1N4531 1N4532 BAS 11 BAV10 BAV18 BAV19 BAV20 BAV21 Pkg Vr V «F (mA) VF DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35

smd 2U 75 diode

Abstract: SMD DIODE 2U smd 2U diode DSAIH0002551
Contextual Info: Silicon Switchina Diode Applications 1N4153, 1N4153-1 k_1I DO-35 Glass Package Used in general purpose applications,where a low current controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Lead D ia