1N916B Search Results

1N916A

Abstract: 1N916 1N916B LL916 LL916A LL916B
Contextual Info: 1N916, 1N916A, 1N916B HIGH CONDUCTANCE FAST DIODES Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit

1N916

Abstract: 1N916A 1N916B
Contextual Info: 1N916, 1N916A, 1N916B HIGH CONDUCTANCE FAST DIODES Max. 0.5 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. Black "ST" Brand XXX Max. 3.9 ST Min. 27.5 Glass Case DO-35 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit

LM3909N

Contextual Info: 1N916B Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N916B Availability Online Store

Contextual Info: 1N916, 1N916A, 1N916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge) 1 4 A A PD 500

DIODE OA-200

Abstract: 1N916 1N916A 1N916B
Contextual Info: 1N916, 1N916A, 1N916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge) 1 4 A A PD 500

d1n914

Abstract: bb204b BAV10
Contextual Info: 10 Small Signal Leaded Devices Switching Diodes D 1N914 1N914A 1N914B 1N916 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N4446 1N4448 1N4449 1N4531 1N4532 BAS 11 BAV10 BAV18 BAV19 BAV20 BAV21 Pkg Vr V «F (mA) VF DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35

1S920

Abstract: 1n4150 sot-23 BAY71 MMB0914 1N916 1N916B 1S921 D0-35 FDLL4148 FDLL4448
Contextual Info: h ô L D. • Silicon Single Junction Diodes continued bSOHBG NATL SEMICOND Vrrm (Volts) Min 100 80 75 Device VFM @ IF l«r I rrm (nA) (ns) (Volts) (mA) Max Max Max Package* 1N916 25 1.0 10 4.0 DO-35 1N916B 25 1.0 30 4.0 DO-35 (Volts) Min 75 70 DO-35 200

1N916B

Abstract: 1N916BM LL916B 0730 Diode
Contextual Info: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N916B 1N916BM LL916B - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics S ym bol t a = 25°c unless otherwise noted.) P aram eter L im its T est C o n d itio n

1N916

Abstract: 1N916A 1N916B diode 1N916 diode 1N916b
Contextual Info: 1N916, 1N916A, 1N916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge) 1 4 A A PD 500

1N917

Abstract: 1n915 1n916b
Contextual Info: TYPES 1N914, 1N914A, 1N9MB, 1N915, 1N916. 1N916A, 1N916B. 1N917 SILICON SWITCHING DIODES B U L L E T IN N O . O L -S 7 3 1 1 9 5 4 , M A R C H 1 9 7 3 FAST SWITCHING DIODES • Rugged Double-Plug Construction Electrical Equivalents mechanical data 1N914 . . . 1N4148 . . . 1N4531

DO-35 PACKAGE

Abstract: DSAIH000251
Contextual Info: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446

1N4148 DO-34

Abstract: 1N4532 BB112 vhf diode BB212 bb809 BB910 SOD-69 1N4148 1N4149
Contextual Info: N AUER PHILIPS/DISCRETE 2SE D • bbSBTBl OOlbiaa 3 ■ T '-O 'S -O 'I 1o Small Signal Devices SWITCHING DIODES ; TYPE 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N4446 1N4448 1N4449 1N4531 1N4532 BAS11 BAV10 BAV18 BAV19 BAV20

Contextual Info: TOSHIBA l - b? {DISCRETE/OPTO} dFI^CHTESO 9Q97250 TOSHIBA DISCRETE/OPTO - ; - - 0QCH2ÖL, 1 |~ 67C 09266 -Silicon Epitaxial Planar Type _ Diode D7*03 »0^ 1 N91 6,1 N91 6A, 1N916B TENTATIVE Unit In nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.

1N916B

Abstract: t 4148 diode
Contextual Info: Symbol TA=25 C unless otherwise noted Parameter VR Breakdown Voltage VF Forward Voltage IR Reverse Leakage CT Total Capacitance 1N916A/B/4448 1N914A/B/4148 trr Test Conditions 1N914B/4448 1N916B 1N914/916/4148 1N914A/916A 1N916B 1N914B/4448 Reverse Recovery Time

Contextual Info: 1N916, 1N916A, 1N916B HIGH CONDUCTANCE FAST DIODES Absolute Maximum Ratings Ta = 25oC Symbol Value Unit WIV 75 V Average Rectified Current IO 200 mA DC Forward Current IF 300 mA Recurrent Peak Forward Current if 400 mA if(surge) if(surge) 1 4 A A PD 500

1N4009

Abstract: BKC666 1N4938 1N625 1N914 1N914A BAW75 BAW76 BKC600 BKC900
Contextual Info: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446

1N916B

Abstract: diode 1N916b 1N916 1N916A toshiba diode do-35 CT2PF
Contextual Info: TO SHIBA ~b? {DISCRETE/O PTO} 9Q97250 TOSHIBA 67C DISCRETE/OPTO * _ dFI^CHTESO J - -Silicon Epitaxial Planar Type Diode 0QCH2ÖL, 1 |~ 09286 D T -0 3 1N91 6,1 N91 6A, 1N916B TENTATIVE Unit in nun COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.

1N4447

Contextual Info: TYPES 1N4148. 1N4149, IN U M i : ^ 4 i9 SILICON SWITCHING DIODES B U L L E T IN NO. D L-S 739269, O C T O B E R 1 9 6 6 - R E V I S E D M A R C H 1973 FA ST S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents: 1N4148 . . . 1N914 . .

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

914B

Abstract: 1N3600 DO-35 1n4147 IR D4-D4 IR diode D4-D4 1N3064 1N4009 1N625 1N914A
Contextual Info: NATL S E M ICONO HE D IS C R E T E D I National Semiconductor t.S Q H 3 Q 0031^0 B | g T-OI-OÌ * sr Computer Diodes Glass Package VF V c *rr na Max Teat Cond. Proc. No. 1000 (Note 1) D4 4 (Note 2) D4 20 4 (Note 2) D4 0.72 1.0 5 100 4 (Note 2) D4 20 75 1.0

1n9148

Abstract: IR diode D4-D4 1N3064 1N4148 1N4149 1N4150 1N914 1N914A 1N914B 1N916
Contextual Info: Switching Diodes Computer Diodes Glass Package V R RM Device No. Package No. (V) R (nA) C V @ R <V> Max @ Ja) <PF> (ns) Max Max Test Cond. Process No. Min . Max (V> 1N914 DO-35 100 25 5000 20 75 1 10 4 4 (Note 2) D3 1N914A DO-35 100 25 5000 20 75 1 20 4

FDS01503

Abstract: FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent
Contextual Info: This Material National Semiconductor Surface Mount Diodes <S> m 2 t-i General Purpose & Specialty Diodes O Device Description Pkg. No. Pin Out Bv V Min •r (nA) @ Max Vr V Vf <V> Max If mA mA C PF Max to­ ns Max Test Cond. FDS01000 FAMILY Proc. Family

diode do35 C 4148

Abstract: diode 4448 FAIRCHILD DIODE diode f 4148 1n914b fairchild 914
Contextual Info: 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL Cathode is denoted with a black band LL-34 COLOR BAND MARKING DEVICE 1ST BAND 2ND BAND FDLL914

JANTX 1N916

Abstract: diode 1n4446 DA-Series 1n4148 D035 1N4532 1N916 JANTX general electric 1n4727 1N4148.1N4448 1N4148 1N4151
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES P a rt N u m b e r BV @ 100/1A M in . V I r @ 2 5 ° C M a x. (ri A ) @ V r (V) V f (V ) M a x. @ I f (m A ) Co @ DV (pf) 1N914 100 25 30 1.00 10 4 1N 914A 100 25 20 1.00 20 4 1N914B 100 25 20 1.00 100 1N916 100 25 20