1N3064 Search Results

1N3064

Contextual Info: FEATURES 1N3064 • • • • • 1N3064 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, Sine, 1uS:

Contextual Info: DIGITRON SEMICONDUCTORS 1N3064, 1N4305, 1N4454 SWITCHING RECTIFIERS MAXIMUM RATINGS Rating Symbol Value Unit WIV 50 V Average rectified current IO 100 mA Forward current steady state IF 300 mA Recurrent peak forward current if 400 mA if surge 1.0 4.0 A Power dissipation

1N3206

Abstract: JAN256 1n900 MC914 1N3064M 1N3069M 1N3207 MC001 MC001A MC914A
Contextual Info: 1 N 8 9 7 - 1N902, 1N3064M, 1N3069M, 1N 3206,1N 3207, MC914 MC914A, MC916, MC916A, MC001, MC001A, M C002 Microsemi Corp. FEA TU RES • • • • • n in n c c Microminiature package. Fast recovery. Hermetically sealed glass package. Stable surface films integrally bonded to the device crystal.

Contextual Info: ttSe.mi-Gonducto'L ZPioduat*., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 FEATURES 1N3064 • • • • • 1N3064 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION

1N3064

Abstract: DSA0054645.txt
Contextual Info: 1N3064 Ultra Fast Low Capacitance Diode. Working Inverse Voltage 50 V. 1.1125 Diod. Page 1 of 1 Enter Your Part # Home Part Number: 1N3064 Online Store 1N3064 Diodes Ultra Fast Low Capacitance Diode. Working Inverse Transistors Voltage 50 V. Integrated Circuits

N3206

Abstract: 1N3206 in 3 N3064M
Contextual Info: 1N897 - 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, MC916, MC916A, MCOOlj MCOOIAj MC002 Microsemi Corp. s c o rra , ^ j For more information call: 714 979-8220 / PELLET DIODES FEATURES • M ic r o m in ia tu r e p a c k a g e . • F a s t re c o v e ry .

1N3064

Contextual Info: 1N3064 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 75 V IF AV Average Rectified Forward Current 300 mA IFSM Non-repetitive Peak Forward Surge Current

Contextual Info: TYPE 1N3064 SILICON SWITCHING DIODE B U L L E T IN N O . D L -S 7 3 9 1 1 4 , S E P T E M B E R 1 9 6 6 - R E V I S E D M A R C H 1 9 7 3 FA ST SWITCHING DIODE • Rugged Double-Plug Construction • Electrically Equivalent to 1N4454 DO-35 and 1N4532 (DO-34)

in4454

Abstract: 1N3064
Contextual Info: COMPUTER DIODE w m r u I t n l/ iv / u c , ja n & ja n t x 1N3064 1N4454; JAN, JANTX & JANTXV 1N4454 ja n , ja n t x & ja n t x v 1N4454-1 1N4532; JAN, JANTX & JANTXV 1N4532 General Purpose Switching ABSOLUTE MAXIMUM RATINGS, XT 29*C Reverse Breakdown Voltage . 75V

D1N3064

Abstract: 1N3064 1N4305 1N4454 FDLL3064 FDLL4305 FDLL4454
Contextual Info: FAIRCHILD SE MICO ND UC TO R , fl4 DE | 00E74A4 3 | - 3469674 FAIRCHILD SEMICONDUCTOR ESSS5ESS 84 D 2 7 4 8 4 D« 1N3064/4305/4454T-o3-oy FD LL3064/4305/4454 FAIRCHILD A Schlumberger Company Ultra Fast Low Capacitance Diodes • C . . .2.0 pF @ Vr = 0, « = 1.0 MHz

1N3206

Abstract: 1N3064M 1n900 MC914 1N3069M 1N3207 1N897 1N902 MC001 MC914A
Contextual Info: 1N897 - 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, / Microsemi Corp. f m SCOTTSDALE, AZ / / F o r m o r e in f o r m a ti o n call: 7I4 979-S220 M C 9lO , M C 910A , The diode experts / SANTA ANA, CA MC001, MC001A, MC002 PELLET DIODES FEATURES

ALL4150

Abstract: 1N4606
Contextual Info: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current

1N914 pspice

Abstract: 1N4148 pspice 1N4148 SMA 1N4004 SMB 1N4148 JAN Diode 1N4004 SMA JAN 1N4148 1N4148 smc ss14 diode DIODE 1N4004
Contextual Info: Discrete Temperature range Software version Revision date 1N3064 DO-35-2 Electrical 25°C N/A N/A 1N4004 DO-41-2 Electrical 25°C 6.0 Jul 05, 2002 1N4148 DO-35-2 Electrical 25°C 6 Jan 01, 1994 1N4149 DO-35-2 Electrical 25°C N/A N/A 1N4150 DO-35-2 Electrical

1N3064

Abstract: 1N4454 1N4305
Contextual Info: □ BE D I 1 1 7 ^ 0 3 B K C INT ERN ATIONAL □□□QEflD b T-Ô3- av 1N3064 1N4305 1N4454 ULTRA FAST LOW CAPACITANCE DIODES ABSOLUTE MAXIMUM RATINGS • T_ • B„ •C C athode end .0 2 0 ' DIH 0 .5 O IK 4.0 ns @ L = 10 mA, L = 10 mA, Vn = 1.0 V 75 V MIN

diode 1n4

Abstract: 1N3064 1N3604 IN3064 1N44S 1N4451 1N4454 1N4454-1 UNITRODE DIODE 240
Contextual Info: COMPUTER DIODE JAN & JANTX 1N3064 JAN, JANTX & JANTXV 1N4454 JAN, JANTX & JANTXV 1N4454-1 General Purpose Switching FEATURES • Metallurgical Bond • Qualified to MIL-S-19500/144 • Planar Passivated Chip • DO-7 or DO-35 Package • Non-JAN Available

1n3062

Contextual Info: DIGITRON SEMICONDUCTORS 1N3062-1N3064 SWITCHING RECTIFIERS MAXIMUM RATINGS Characteristics Symbol 1N3062 1N3063 1N3064 Unit Working peak reverse voltage VRWM 50 V Repetitive peak reverse voltage VRRM 75 V Average forward current IO 75 mA Forward steady-state current

1N3605

Abstract: 1N3065 1N3062 1N3063 1N3064 1N3600 1N3604 1N4148 1N914 1N914B
Contextual Info: Silicon Diodes DO-35 Case • «3 Switching Diodes TYPE NO. Vr r m •o VF @ If trr Ct V (mA) (V) (mA) (ns) (PF) MAX MAX MAX 1N914 100 150 1.0 10 4.0 4.0 1N914B 100 150 1.0 100 4.0 4.0 1N3062 75 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 MAX 1N3064 75

Switching

Abstract: 1N3065 1n914 equivalent 1N3605 1N4151 equivalent 1N3062 1N4153 silicon diodes 1N4863 datasheets diode 1n3064 1N3063
Contextual Info: Silicon Diodes DO-35 Case Switching Diodes TYPE NO. 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864 VRRM V MAX 100 100 75 75 75 75 50 40 75 100

Contextual Info: Silicon Diodes DO-35 Case Switching Diodes TYPE NO. Vf V lo (mA) (V) (mA) MAX MAX MAX 1.0 10 4.0 4.0 1.0 100 4.0 4.0 Vrrm IF trr Ct (ns) (PF> MAX 1N914 100 150 1N914B 1G0 150 1N3062 7'5 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75 1.0 10

DO-35 PACKAGE

Abstract: DSAIH000251
Contextual Info: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446

1N4454

Abstract: 1N3064 DSAIH0002547
Contextual Info: □ BE D I 1 1 7 ^ 0 3 B K C INTER NAT IONAL □□□QEflD b T-Ô 3- aq 1N3064 1N4305 1N4454 ULTRA FAST LOW CAPACITANCE DIODES ABSOLUTE MAXIMUM RATINGS • T_ • B„ • C C a th o d e end .0 2 0 ' D IH 0 .5 OIK 4.0 ns @ L = 10 mA, L = 10 mA, Vn = 1.0 V

1N4444

Contextual Info: TYPES 1N430S, 1N4444. 1N4454 SILICON SWITCHING DIODES BU LL ET IN NO. DL-S 699266, OCTOBER 1 9 6 6 -R E V IS E D AUGU ST 1969 FA ST SW IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents 1N4305 . . 1N3063 . . . 1N4532 1N4454 . 1N3064

c914

Abstract: c916 1N3206 1n897 MC001A
Contextual Info: 1N897- 1N902, 1N3064M, 1N3069M, 1N3206,1N3207, MC914, MC914A, MC916, MC916A, MC001, MC001A, MC002 SCOTTSDALE, A Z SANTA ANA, CA For m ore inform ation call: 714 979-8220 MICRO-DIODES FE A TU R E S M ic ro m in ia tu re p a c k a g e . F a st r e c o v e ry .

Contextual Info: Silicon Diodes DO-35 Case p Switching Diodes TYPE NO. Vrrm VF @ If trr Ct V •o (mA) (V) (mA) (ns) (pF) MAX MAX MAX 1N914 100 150 1.0 10 4.0 4.0 1N914B 100 150 1.0 100 4.0 4.0 1N3062 75 75 1.0 20 2.0 1.0 1N3063 75 75 0.85 10 4.0 2.0 1N3064 75 75 1.0 10