1N4449 Search Results

1N4446

Abstract: 3vf4
Contextual Info: TOSHIBA {DI SC RE TE /O PT O* I i 9097250 TOSHIBA t.7 DE I ^ D T T E S O DISCRETE/OPTO 1N4446-1N4449 S ilic o n QDDC]2CÌ3 t |~~ D T~ 03 67 c" O 92 93 ~0^ E p it a x ia l ^ P lanar T y p e D io d e TENTATIVE Unit In mm COMMUNICATION AND INDUSTRIAL APPLICATIONS.

Contextual Info: DIGITRON SEMICONDUCTORS 1N4149, 1N4151-1N4154, 1N4446-1N4449 SWITCHING RECTIFIER MAXIMUM RATINGS @ 25°C Parameter Symbol 1N4149 1N4151 1N4152 1N4153 VRM 75V 75V 40V 75V Peak reverse voltage Average rectified current IO Forward surge current, 8.3ms Operating junction temperature range

1N4149

Abstract: 1N4150 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: CE 1N914 THRU 1N4454 CHENYI ELECTRONICS SMALL SIGNAL SWITCHING DIODE FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end

1N4447-A

Abstract: 1N4532 1S953 1N4448-A is805 1N4446 1N4447 1N4448 1N4449 1N4454
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536

Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature

1N4149

Abstract: 1N4150 1N4151 1N4152 1N4153 1N4447 1N4449 1N914 1N44491
Contextual Info: 1N 914 .1N 4454 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also availble in glass case DO-34. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Dimensions in mm Dimensions in mm

1N4148S

Abstract: d7800 N444 1N4149S 150D 1N4154S 1N4446S 1N4447S 1N4448S 1N4449S
Contextual Info: 1N4148S, 1N4149S, 1N4154S, 1N4446S to 1N4449S Silicon Epitaxial Planar Diodes Silicon Epitaxial Planar Diodes for general purposes and fast switching applications. x .1.9 0 »o> These diodes are delivered taped see page 4 . Cathode Mark m a x . 0.42 f Glass case JEDEC DO-34

1n4149

Abstract: 1N4153 silicon diodes 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature

1N4447

Contextual Info: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and is very popular for general purpose switching applications.

IN4149

Abstract: IN4154 DIODe IN4446 1N4446 in4448 4N* diode 1N4447 LN4149 1N4154 1N4149
Contextual Info: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES • M e ta llu rg ic a l Bond • Planar Passivated • DO-35 DESCRIPTION This se rie s o ffe rs M e ta llu rg ic a l B onding and Is very pop u lar fo r general purpose

Reverse voltage diode

Abstract: 1N4449 DO-204AH
Contextual Info: 1N4449 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 75V • Peak reverse voltage:max. 100 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4)

1N4149

Abstract: 1N4151 1N4152 1N4153 1N4447 1N4449 1N4454 1N914
Contextual Info: 1N914.1N4454 SILICON EPITAXIAL PLANAR DIODES for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25℃ Max. junction temperature

d1n914

Abstract: bb204b BAV10
Contextual Info: 10 Small Signal Leaded Devices Switching Diodes D 1N914 1N914A 1N914B 1N916 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N4446 1N4448 1N4449 1N4531 1N4532 BAS 11 BAV10 BAV18 BAV19 BAV20 BAV21 Pkg Vr V «F (mA) VF DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35

1N4454A

Abstract: IS954 1N4532 1S954 IS953 1S955 In4536 1N4446 1N4447 1N4448
Contextual Info: - 148- 41 Jig 1 S -k fS] # & m % m # t rr n s & C t(p F ) m s í± £ V rrm Vr io . I f * I fm I fsm 1 tk & Vpnax m iä & i* ft I Rmax ( * tt s) * itii © 1Í ^ % 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 H i a — A H i a — A

1N4448

Abstract: 1N4449 TOSHIBA 1N4449
Contextual Info: TOSHIBA {DIS CRE TE/ OPT O* Ii t.? DE f TQTTESO QDDc]2ci3 h 9097250 TOSHIBA DISCRETE/OPTO 1N4446-1N4449 S ilic o n D T~03 67C 0 92 93 E p it a x ia l ^ P la n a r T y p e D io d e TENTATIVE Unit In mm COMMUNICATION AND INDUSTRIAL A PPLICATIO N S. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICAT IO N S.

Switching

Abstract: 1N3065 1n914 equivalent 1N3605 1N4151 equivalent 1N3062 1N4153 silicon diodes 1N4863 datasheets diode 1n3064 1N3063
Contextual Info: Silicon Diodes DO-35 Case Switching Diodes TYPE NO. 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864 VRRM V MAX 100 100 75 75 75 75 50 40 75 100

11202-1

Abstract: mil-prf-19500 1n4151
Contextual Info: 1N4149-1,51-1,54-1 & 1N4446-1 – 1N4449-1 Available Screening in reference to MIL-PRF-19500 available Computer Switching Diode DESCRIPTION These popular 1N4149, 1N4151, 1N4154 and 1N4446 – 1N4449 series of JEDEC registered switching/signal diodes are available with internal metallurgical bonded construction. These

Contextual Info: 1N4449 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • • • • High switching speed: max. 4 ns Reverse voltage:max. 75V Peak reverse voltage:max. 100 V Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4)

1N4149

Abstract: 1N4150 1N4152 1N4153 1N4154 1N4447 1N4449 1N4454 1N914 ts65
Contextual Info: 1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM in c h e s M ax. M in . M ax. -

1N4532

Abstract: 1N4448-A 1N4446 1N4447 1N4448 1N4449 1N4450 1N4454 1N4531 1N4533
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536

1N4532

Abstract: 1S954 1N4536 1N4446 1N4447 1N4448 1N4449 1N4450 1N4454 1N4531
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536

IN4154

Abstract: in4447 IN4448 in4151 1N4149 diode 1n4446 1N4447 1N4446 1N444B Diode 1n4149
Contextual Info: COMPUTER DIODE Switching 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 FEATURES • M etallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers M etallurgical Bonding and is very popular fo r general purpose sw itching applications.

1N4148 DO-34

Abstract: 1N4532 BB112 vhf diode BB212 bb809 BB910 SOD-69 1N4148 1N4149
Contextual Info: N AUER PHILIPS/DISCRETE 2SE D • bbSBTBl OOlbiaa 3 ■ T '-O 'S -O 'I 1o Small Signal Devices SWITCHING DIODES ; TYPE 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148 1N4149 1N4150 1N4151 1N4153 1N4446 1N4448 1N4449 1N4531 1N4532 BAS11 BAV10 BAV18 BAV19 BAV20

Contextual Info: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES • Metallurgical Bond • Planar Passivated • DO-35 DESCRIPTION This series offers Metallurgical Bonding and is very popular for general purpose switching applications.