IN4151 Search Results

in4151

Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134
Contextual Info: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.

Contextual Info: 1N914 THRU FORWARD INTERNATIONAL ELECTRONICS LTD. SEM ICO N D U CTO R 4^ 43 TECHNICAL DATA_ TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE -50 to 100 Volts CURRENT - 0.075 to 0.2 Ampere FEATURES ' ‘ *

in4151

Abstract: IN4150 IN4153 diode IN4153 N4150 1N4151 1N4153 1N4150 IEC134 colourcoded diodes
Contextual Info: • bbSB'm 1N4150 1N4151 1N4153 OOEb'îOB 202 H A P X N APIER P HILI PS/D ISCR ETE b^E » ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

IN4152

Abstract: IN4606 in4447 IN916B IN4608 IN917 IN4150 in914b IN4149 IN4164
Contextual Info: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JG DEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed " 1 S " are Texas Instruments in-house numbers.

Contextual Info: 500 mW EPITAXIAL PLANAR DIODES D ata Sheet m iconductor Features • PLANAR PROCESS ■ INDUSTRY STANDARD DO-35 PACKAG E ■ 500 mW POWER DISSIPATION ■ MEETS UL SPECIFICATION 94V-0 1N4151 E le c t r ic a l C h a r a c t e r is t ic s @ 2 5 ° C . M a x h n u n R atings

IN4149

Abstract: cv8790 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 IN4448
Contextual Info: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JGDEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed "1 S " are Texas Instruments in-house numbers.

IN2222A

Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

IN5342B

Abstract: diodes IN4001 IN4736A IN4448 IN4933-7 IN5921-58B IN914A-B GT60-005-10 UF160-005-06 RGP10A.M
Contextual Info: TABLE OF CONTENTS GENERAL PURPOSE RECTIFIERS . FAST RECOVERY RECTIFIERS . ULTRA FAST RECOVERY RECTIFIERS .

Contextual Info: 1N4150 1N4151 1N4153 b b S B ' m D02b^03 202 H A P X N AUER PHILIPS/DISCRETE b^E D _X' V ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. The IN4150 is primarily intended for general purpose use in computer and industrial applications.

in4151

Abstract: 1N4151 D0-35 DO35 package
Contextual Info: 1N4151 500 mW EPITAXIAL PLANAR DIODES Data Sheet Mechanical Dimensions Description JEDEC D0-35 .120 .200 .060 .090 Features 1.00 Min. .018 .022 n PLANAR PROCESS n INDUSTRY STANDARD DO-35 PACKAGE n 500 mW POWER DISSIPATION n MEETS UL SPECIFICATION 94V-0 Maximum Ratings