BBY31 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE SSE I> • T'0l~Ol kfaS3131 Q01fc,54b S ■ Surface M ount Devices VARIABLE CAPACITANCE DIODES RATINGS TYPE BB215 BB219 BB804 BBY31 BBY39* BE1Y40 BBY42 BBY62* PACKAGE SOD-80 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-143 Cd RATIO

Contextual Info: Philips Semiconductors b b 5 3 ^ 31 □ 0 2 b 4 M0 b 7 5 IB APX Product specification Variable capacitance diode BBY31 N AUER PHILIPS/DISCRETE DESCRIPTION The BBY31 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended for electronic tuning

marking u12 diode

Abstract: smd diode U12 marking code u12 SMD MARKING CODE SMD s1 sot23 DIODE SMD 10A BBY31 smd code marking sot23
Contextual Info: Product specification Philips Semiconductors UHF variable capacitance diode BBY31 FEATURES • Excellent linearity • Small plastic S M D package • C28: 1.9 pF; ratio: 8.3. 1 2 APPLICATIONS -H • Electronic tuning in UHF television tuners 3 • VCO . 3

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE BBY31 ISSUE 3 - FEBRUARY 1996 Hr PIN CO N FIG U R A TIO N 1 Z P A R TM A R KIN G D ETA IL B B Y 3 1 - S1 1 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SYM B O L Power D issipation at T amb=25°C P,o, Operating and Storage Tem perature Range

MARKING CODE SMD s1 sot23

Abstract: BBY31 "MARKING CODE S1" UHF diode SC01 Marking 1996 1 MBC846
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BBY31 UHF variable capacitance diode Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification UHF variable capacitance diode

BB219

Abstract: BBY62 sod-87 BBV39 sot-23 lf BB215 BBY31 philips semiconductor Schottky SOD87 PRLL5817 SOD87 BBY31
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • T-O l'O ! kfaS3131 Q01fe>54b S ■ Surface Mount Devices VARIABLE CAPACITANCE DIODES RATINGS TYPE BB215 BB219 BB804 BBY31 BBV39* BEJY40 BBY42 BBY62* PACKAGE SOD-80 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-143 ¥ Cd RATTO

"MARKING CODE S1"

Abstract: marking CODE R SMD DIODE marking code s1 SMD diode smd code marking sot23 SMD MARKING CODE M 4 Diode VARIABLE CAPACITANCE DIODE BBY31 philips semiconductor marking code 10 sot23 marking code NA sot23 smd diode code S1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D088 BBY31 UHF variable capacitance diode Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification UHF variable capacitance diode

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAIL Î BBY31 - S I ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150 °C P.o.

F 407 Diode

Abstract: BBY31 BBY31 philips semiconductor SOT23 N1 "Variable Capacitance Diode"
Contextual Info: Philips Semiconductors_ • b b 5 3^31 □D5bl4l4D b75 W A P X Product specification Variable capacitance diode BBY31 b^E T> N AMER P H I L I P S / D I S C R E T E DESCRIPTION The BBY31 is a silicon planar variable capacitance diode in a m icrom iniature SOT23 envelope. It

ZC2812E

Contextual Info: SOT23 VARIABLE CAPACITANCE TUNER DIODES Pinout : 1-Cathode, 3-Anode Type Reverse Breakdown Voltage Nom inal Capacitance atf=1M H z Ctot Capacitance Ratio at f=1MHz c 3/c 25 Q at V r=3V f=50MHz Vr V M in pF Max pF at VR V Min Typ Max Typ BBY31 28 1.8 2.8 25

Contextual Info: Product specification Philips Semiconductors BBY31 Variable capacitance diode DESCRIPTION The BBY31 is a silicon planar variable capacitance diode in a microminiature SOT23 envelope. It is intended for electronic tuning applications in thick and thin film

MARKING CODE SMD s1 sot23

Abstract: "MARKING CODE S1"
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D088 BBY31 UHF variable capacitance diode Product specification Supersedes data of November 1993 1996 May 03 Philips Semiconductors Product specification UHF variable capacitance diode BBY31 FEATURES • Excellent linearity

SCHOTTKY DIODE SOD-80

Abstract: Schottky SOD87 BB219 BYD37J BBY39 SOD 87 bat54a sot-23 BB215 BB804 BBY42
Contextual Info: N AMER PHILIPS/DISCRETE ESE D Bi 1^53^31 QQlbaMb S • T~ Ot - 0 \ 68 Surface Mount Devices VARIABLE CAPACITANCE DIODES BB215 BB219 BB804 BBY31 BBY39* BEJY40 BBY42 BBY62* PACKAGE SOD-80 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 SOT-23 SOT-143 Cd RATTO f = 1 MHz typ.

max2810

Contextual Info: Short-form product specification Philips Semiconductors Variable capacitance diode BBY31 QUICK REFERENCE DATA APPLICATIONS • Electronic tuning applications in thick and thin film circuits. SYMBOL MIN. TYP. MAX. UNIT - - 28 V VR = 28 V - - 10 nA diode capacitance

BBY31

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE BBY31 ISSUE 4 – JANUARY 1998 PIN CONFIGURATION 1 2 1 PARTMARKING DETAIL BBY31 – S1 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range

zbat54

Contextual Info: SOT23 VARIABLE CAPACITANCE TU N ER DIODES Pinout : 1-Cathode, 3-Anode . Type Reverse Breakdown Voltage Nom inal Capacitance at f=1MHz Qot Capacitance Ratio at f=1MHz c 3/c 25 Q at VR=3V f=50MHz Vr V Min pF Max pF at VR V Min Typ Max Typ BBY31 28 1.8 2.8 25

BBY31

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE BBY31 . SSUE 3 -FEBRUARY 1996 PIN CONFIGURATION • I _L X T PARTMARKING DETAIL BBY31-S1 1 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamt^25°C P,o, Tj’Tstg Operating and Storage Temperature Range

FMMV105G

Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
Contextual Info: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications

DIODO LN4148

Abstract: A2 diodo zener diodo zener 5.1 B2 diodo 1n4148 diodo s4 diodo s4 81 6.8 B2 diodo a52 zener diode diodo 72 DIODO LED
Contextual Info: Microminiature devices diodes book 1 part 3 Outline SO T-23 Type No. | | » Q £ BAV70 X4 BAW66 X5 BAV99 X6 Description Common cathode double diodo Common anode double diodo Two diodes i n series intended for high speed switching. Vrrm Ifrm Max. Reverse Recovery Time, t rr

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

C5V6 ph

Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Contextual Info: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER

BF1201A

Abstract: bf1211 dual gate mosfet bfq34 application note SA636 BFG480W BF862 AM LNA BFR10 SA676 Reliability SA612A SA614A
Contextual Info: RF Products RF Products 241 RF Access Systems CATV RF Hybrid Amplifiers Type Number Description Frequency Range Gain dB Slope (dB) FL S11/S22 CTB XMOD CSO @Ch @Vo (dBmV) F @fmax Itot (mA) BGS67A 65 MHz, 25.5 dB gain Reverse Amplifier, 12 V 5 - 65 25 - 26

BAV90

Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17