BCX20 Search Results

Contextual Info: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCX19 = U l BCX20 = U2 P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

6302

Contextual Info: SURFACE MOUNT CATALOGUE SOT 23 CERAMIC LCC NPN GENERAL PURPOSE NPN RATINGS DEVICE BCW60D BCW71 BCW72 BCW81 BCX19 BCX20 BCX56 BCX70G BCX70H BCX70J BCX70K NEBTA06 NEBT2222 NEBT2222A NEBT3903 NEBT3904 hFE VCE SAT fT VCEO IC min/max@IC/VCEO max V@IC/IB typ 32

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 G eneral Purpose Transistors 2 EMITTER COLLECTOR 3 PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 2 EMITTER ^i 2 CASE 318-08, STYLE 6 S O T-23 TO-236AB MAXIMUM RATINGS

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 PARTMARKING DETAILS - B C X Ì7 - T1 BCX18 -T 2 BCX17R - T4 BCX18R - T5 CO M PLEM ENTARY TYPES - BCX17 cÆ P e BCX19 B C X 1 8 - BCX20 SOT23 ABSOLUTE M AXIM UM RATINGS. PARAMETER BCX17

BCX19

Abstract: BCX17 BCX18 BCX20
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 PARTMARKING DETAILS - - U1 U2 BCX20R- U4 U5 BCX19 BCX20 BCX19 - BCX17 BCX20 - BCX18 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage

BCX20LT1

Contextual Info: BCX20LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25 Unit Vcbo 30 V Collector-Emitter Voltage Vceo 25 V Emitter-Base Voltage 1. Vebo 5.0 V Collector Current Ic 500 mA Total Device Dissipation PD 225 mw 1.8

Contextual Info: BCX20 NPN Epitaxial Silicon Transistor BCX20 NPN Epitaxial Silicon Transistor Switching and Amplifier Applications 3 2 1 SOT-23 Marking: U2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units

BCX17L

Abstract: BCX18L BCX19L BCX20L
Contextual Info: M O T O R O L A SC M A X I M U M R A T IN G S Value Rating Sym bol BCX17L BCX19L BCX18L BCX20L Unit Collector-Emitter Voltage VCEO 45 25 Vdc Collector-Base Voltage VCBO 50 30 Vdc Emitter-Base Voltage Ve b O 5.0 Vdc ic 500 mAdc Collector Current — Continuous

BCX17

Abstract: BCX17LT1 BCX18 BCX18LT1 BCX19LT1 BCX20LT1
Contextual Info: MOTOROLA Order this document by BCX17LT1/D SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 General Purpose Transistors 1 BASE 2 EMITTER COLLECTOR 3 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 2 EMITTER 3

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCX19 = U1 BCX20 = U2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

BCX19

Abstract: lem HA BCX20
Contextual Info: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arkin g BCX19 = U l BCX20 = U2 P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6

Contextual Info: IL BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BCX19 = U1 BCX20 = U2 PACKAGE O UTLIN E DETAILS ALL DIM EN SION S IN mm 0.14 0.09 _L 0.70 0.50 1 1.4 1.2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR R0.1 .004 ' I fV R0.05

BCX19

Abstract: BCX20
Contextual Info: L BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N transistors M arking BCX19 = U1 BCX20 = U2 PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m _3.0_ 2.8 0.1 4 0.48 0.38 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 _L02_

Contextual Info: General Purpose Transistors 3 COLLECTOR 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 3 COLLECTOR 1 BASE 2 EMITTER 2 EMITTER Voltage and current are negative for PNP transistors 3 MAXIMUM RATINGS 1 Value Rating Symbol BCX17LT1 BCX19LT1 BCX18LT1 BCX20LT1

BCX19

Abstract: BCX18 BCX20
Contextual Info: 7 1 1 G ß 2 b GDbfiSb? TÄG PHIN BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope, intended for application in th ick and thin-film circuits. These transistors are intended fo r general purposes as well as saturated switching and driver applications

Contextual Info: M A X IM U M RATINGS PNP Value Symbol BCX17LT1 BCX19LT1 C o lle cto r-E m itte r Voltage VCEO 45 25 Vdc C ollector-Base V o ltage VCBO 50 30 Vdc Em itter-Base V o ltage V e BO 5.0 Vdc 'c 500 m A dc Rating C o lle ctor C u rrent — C ontinuous BCX18LT1 BCX20LT1

ic 556

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 General Purpose Transistors 1 BASE 2 EMITTER COLLECTOR 3 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB

BCX19R

Contextual Info: BCX19 BCX20 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996 PARTM ARKING DETAILS - CO M PLEM ENTARY TYPES BCX19 - U1 BCX20 - U2 BC X19R • U4 BCX2QR- U5 BCX19 - BCX20 BCX17 BCX18 ABSOLUTE M AXIM UM RATINGS. PARAMETER >M 8 0 L BCX19

Contextual Info: BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic package, intended fo r a p p lica tio n in th ic k and th in -film circuits. These transistors are intended fo r general purposes as w e ll as saturated sw itch in g and driver applications

BCX17

Abstract: BCX18R marking of m7 diodes sot 23 marking code T2 sot marking t5 T4 MARKING CODE I8 SOT23 Diode marking m7 t4 u4 BCX17R
Contextual Info: FERRANTI semiconductors BCX17 BCX18 PNP Si licon Planar M e d i u m P o w e r Transistors DESCRIPTION These devices are intended for saturated sw itching, general purpose sw itch in g and driver applications. Com plem entary to the BCX19 and BCX20. Encapsulated in the popular SO T-23 package these devices

MV SOT23

Abstract: BCX18 BCX17 BCX18R t4 sot23 diode BCX17R BCX19 BCX20 DSA003674
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS BCX17 BCX18 ISSUE 3 – FEBRUARY 1996 PARTMARKING DETAILS – BCX17 BCX18 BCX17R BCX18R – T1 – T2 – T4 – T5 E C B COMPLEMENTARY TYPES - BCX17 - BCX19 BCX18 - BCX20 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER

BCX20LT1

Contextual Info: BCX20LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25 Unit Vcbo 30 V Collector-Emitter Voltage Vceo 25 V Emitter-Base Voltage 1. Vebo 5.0 V Collector Current Ic 500 mA Total Device Dissipation PD 225 mw 1.8

BCX19

Abstract: BCX20
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX19 BCX20 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BCX19 = U1 BCX20 = U2 Pin configuration 1 = BASE 2 = EMITTER

1D2 SOT-23

Abstract: BCX18 BCX19 BCX20
Contextual Info: • bbS3131 OOEMbQl TD2 H A P X N AHER PHILIPS/DISCRETE BCX19 BCX20 b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a SOT-23 plastic envelope, intended for application in thick and thin-film circuits. These transistors are intended for general purposes as well as saturated switching and driver applications