BAX12 Search Results

Contextual Info: • ^ 5 3 1 3 1 0Q2b3bQ 582 H A P X N AMER PHILIPS/DISCRETE BAX12 b*lE » _y \ _ SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable of absorbing transients repetitively. It is a fast,

BAX12A

Abstract: BAX12 equivalent BAX12
Contextual Info: Certificate TH97/10561QM BAX12, BAX12A Certificate TW00/17276EM CONTROLLED AVALANCHE DIODES M1A FEATURES : * Switching speed: max. 50 ns * Continuous reverse voltage: max. 90V * Repetitive peak reverse voltage: max. 90V * Repetitive peak forward current: max.800 mA

BAX12

Abstract: BAX12 equivalent DO35 MAM246 Controlled avalanche diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12 FEATURES DESCRIPTION • Hermetically sealed leaded glass

BAX12A

Abstract: BAX12 equivalent G1.L BAX12 DO35 MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12; BAX12A Controlled avalanche diodes Product specification Supersedes data of 1996 Sep 17 2002 Apr 08 Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A FEATURES DESCRIPTION

BAX12 equivalent

Abstract: BAX12 DO35 MAM246
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 23 Philips Semiconductors Product specification Controlled avalanche diode BAX12

BAX12

Contextual Info: • bb53^31 0D2b3b0 562 « A P X N AMER P H I L I P S / D I S C R E T E b'iE BAX12 T> SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable o f absorbing transients repetitively. It is a fast, controlled avalanche diode, intended for switching inductive loads e.g. in semi-electronic telephone

BAX12

Abstract: BAY85S MARKING D53 marking IAY marking JB diode BAV70 BAV74 BAW56 BAT18DK Thomson-CSF diodes
Contextual Info: general purpose and switching diodes 1* diodes d'usage général et de com m utation Types •f AV VF @ lF |R @ V R V RM* (V) (mA) max (V) (mA) max (nA) (V) BAL74 50 70 1 100 100 50 BAL 99 70 70 1,3 100 2500 70 BAR 74 SD 914 BAS 16 SD BAX12 50 75 75 90(3)

BAX12

Abstract: DO35 MAM246 Controlled avalanche diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12

BAX12

Abstract: D035
Contextual Info: Philips Semiconductors Product specification Controlled avalanche diode BAX12 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAX12 is a controlled avalanche diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)

BAX12A

Abstract: BAX12 equivalent BAX12
Contextual Info: Certificate TH97/10561QM BAX12, BAX12A Certificate TW00/17276EM CONTROLLED AVALANCHE DIODES DO - 35 FEATURES : * Switching speed: max. 50 ns * Continuous reverse voltage: max. 90V * Repetitive peak reverse voltage: max. 90V * Repetitive peak forward current: max.800 mA

avalanche diode

Abstract: BAX12 DO35 MAM246 bax12 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

ac voltage stabilizer circuit diagram

Abstract: TDA3654 equivalent automatic change over switch circuit diagram pulse circuit SL 100 NPN Transistor TV horizontal Deflection Systems 25 automatic stabilizer circuit diagram BAX12 equivalent inverter 12 V to 220 V phase sequence detector
Contextual Info: Philips Semiconductors Preliminary specification Synchronization circuit with synchronized vertical divider system for 60 Hz TDA2579C FEATURES Vertical part Synchronization and horizontal part • fV = 60 Hz M system • Horizontal sync separator and noise inverter

bay85

Abstract: BAX12 BAY85S AT25 MA marking
Contextual Info: S G S-THOHSON 71C D fl 7 ^ 2 ^ 3 7 DQDS137 4 | SEMICONDUCTORS GENERAL PURPOSEAND SMHTEUffim m VR Vr m * lF AV (V) (mA) max (V) (mA) CHARACTERISTICS A T 25 °C Ir @ Vr Ir @ Vr Tamb = 150 °C max max max (nA) (V) (| iA) (V) (pF) BAL 99 70 70 1,3 100 2500 70

tda 1113

Abstract: 9L05 2578A ic tda 2578A BAX12A TDA2578 FMLM M3045
Contextual Info: TDA 2578 88 Tor odchylania H i stopien sterowania V 29i6V U„= 26V + u„= +12V 1^ 4,7p/16V 220p /16V WY sterujqce H Zröwnowazenie cz^st. V Ustawienie szerokosci obrazu 33k 180k wypr.14 ! 56k I 6,8k Ukiadowo odchylanie H i V Impuls powrotu H SV Identyfikacja

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

BAY41

Abstract: BAY43 bax12 BAY42
Contextual Info: COMPUTER DIODE BAY41-BAY43 BAY60 BAX 12 Switching FEATURES DESCRIPTION • Metallurgical Bond • Planar Passivated This series offers Metallurgical Bonding and is very popular for general purpose switching applications. • 00-35 ABSOLUTE MAXIMUM RATINGS. AT 25°C

Diode BAY 46

Abstract: Diode BAY 80 Diode BAY 74 Diode BAY 45 Diode BAY 19 diode BAW55 BAY 73 diode 1N3595 Diode BAY 21 Diode BAY 41
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de commutation et usage général tho m so n -csf Case \> F A V 200.225 mA 100.150 m A 50.90 m A 400 m A Vr ( V » \ 10 J €£043 1N456 25 1N 456 A W 449)1 1 30 rtm a a

Diode BAY 46

Abstract: 1N 4000 diode 1N3069 BA224-220 BAV45 BAY41 Diode BAY 41 Diode BAY 80 BAX12 SFD49
Contextual Info: general purpose and switching diode selector guide guide de sélection diodes de com m utation et usage général th o m so n -csf Case \> F A V 200.225 mA 100.150 mA 50.90 m A 400 m A Vr ( V » \ 10 J 1N 456 A €£043 1N456 25 W 449)11 rtm a a j

TDA2578

Abstract: A2578 TDA3651 TDA3651AQ flyback data pin diagram flyback pin diagram
Contextual Info: DEVELO PMENT SAMPLE DATA TDA3651AQ This in fo rm a tio n is derived fro m developm ent samples made available fo r evaluation. It does n o t necessarily im ply tha t 'the device w ill go in to regular p ro du ction . v VERTICAL DEFLECTION CIRCUIT The T D A 3 6 5 1 A Q is a v e rtica l d e fle c tio n o u tp u t c irc u it fo r drive o f various d e fle c tio n systems w ith

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

TDA2577

Abstract: tda2577a TV horizontal Deflection Systems ic LK 1628 7Z86 TDA3651 Z86172
Contextual Info: TDA2577A J \ _ SYNCHRONIZATION CIRCUIT WITH VFRTICAL OSCILLATOR AND DRIVER STAGES G E N E R A L D E S C R IP T IO N The T D A 2 5 7 7 A separates the vertical and h orizontal sync pulses fro m the com posite T V video signal and uses them to synchronize horizo ntal and vertical oscillators.