IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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IN4153
Abstract: 1N4153 1N4153-1 IN4153-1
Contextual Info: JAN, JANTX, •1N4153 and 1N4153-1 AVAILABLE IN AND JANTXV 1N4153 and 1N4153-1 PER MlL-PRF-19500/337 'SW ITCHING DIODES 'H E R M ETIC A LLY SEALED ' METALLURGICALLY BONDED ' DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Ju n ctio n T e m p e ra tu re : -6 5°C to + 17 5°C
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1n41531n4153-1mll-prf-19500/337mil-s-19500/337+3do-35in4153in4153-1
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in4151
Abstract: IN4150 IN4153 IN4153 diode N4150 1N4150 1N4151 1N4153 IEC134
Contextual Info: • bbSB'm N AUER 202 ooab^oa 1N4150 1N4151 1N4153 hapx PHILIPS/DISCRETE bTE D ULTRA-HIGH-SPEED SILICON DIODES Whiskerless diodes in su b m in ia tu re DO -35 envelopes. T he IN 4 1 5 0 is p rim a rily intended fo r general purpose use in co m p u te r and in d u stria l applications.
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bb531311n41501n41511n4153+7do-35in4150in4151in4153n4150in4153 diodeiec134
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1N4153UR-1
Abstract: CDLL4153 DO-213AA LL34
Contextual Info: 1N4153UR-1 CDLL4153 • 1N4153UR-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/337 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
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1n4153ur-1cdll4153mil-prf-19500/337in4153ur-1+2do-213aall34
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in4153
Abstract: c 337 25 1N4153 1N4153-1 D0-35
Contextual Info: • 1N4153 and 1N4153-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/337 1N4153 and 1N4153-1 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C
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1n41531n4153-1mil-prf-19500/337in4153+3in4153-1c 337 25d0-35
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in4153
Abstract: DIODE SOD-80 JANTX IN4153UR-1
Contextual Info: • 1N4153UR-1 AVAILABLE IN JAN, 1N4153UR-1 CDLL4153 JANTX, AND JANTXV PER MIL-PRF-19500/337 • SWITCHING DIODE • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
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1n4153ur-1mil-prf-19500/337cdll41530063i+3in4153ur-1in4153diode sod-80 jantx
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IN4153
Contextual Info: • 1N4153 and 1N4153-1 AVAILABLE IN JAN, JANTX, AND JANTXV 1N4153 and 1N4153-1 PER MIL-PRF-19500/337 • SWITCHING DIODES • HERMETICALLY SEALED • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Junction Temperature: -65°C to +175°C
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1n41531n4153-1mil-prf-19500/337in4153+1in4153-1
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LL34
Abstract: 1N4153UR-1 CDLL4153 DO-213AA JANTX, JX, JAN IN4153UR-1
Contextual Info: •1N4153UR-1 AVAILABLE IN JAN, JANTX, AND 1N4153UR-1 C D LL4153 JANTXV PER MlL-PRF-19500/337 'SW ITCHING DIODE 'H E R M ETIC A LLY SEALED ' METALLURGICALLY BONDED ' DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Ju n ctio n T e m p e ra tu re : -6 5°C to + 17 5°C
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1n4153ur-1f-19500/337cdll4153in4153ur-1+3ll34do-213aajantx, jx, jan
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7rca sk cross-referencekia 4318transistor cs 9012til 322asx3704diode d.a.t.a. book1n1007
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2s301bs9300-c-5982s305bs9300-c-366+162s3072s322cv7396bs9300-c-396cv7647bs9300-c-647tis43equivalent of transistor bc214bf257 texasequivalent of transistor bc212 bc 2142n696 texas instrumentsq2t2222tis70bfr40kd 2060 transistorbf195 equivalent
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IN4152
Abstract: IN4606 in4447 IN916B IN4608 IN917 IN4150 in914b IN4149 IN4164
Contextual Info: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JG DEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed " 1 S " are Texas Instruments in-house numbers.
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is960is961do-35in4152+9in4606in4447in916bin4608in917in4150in914bin4149in4164
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IN4149
Abstract: cv8790 CV7040 Diode BAY 61 IS923 IN917 CV8617 texas is920 IS920 IN4448
Contextual Info: 1 Small Signal Diodes Explanation of Device Coding Devices prefixed " 1 N " are JGDEC Joint Electronic Device Engineering Council registered devices. These-type numbers are recognised in the USA. Devices prefixed "1 S " are Texas Instruments in-house numbers.
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cv8790is922do-35cv9637+12in4448ds59-61/03/302bay71ds59-61/03/303in4149cv7040diode bay 61is923in917cv8617texas is920is920
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IN2222A
Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll
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in2222atransitron catalogtcr43tm106+6in4431n9448sv4091in4868 diode3n68in536
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TELEVISION EHT TRANSFORMERS
Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes
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lcd01television eht transformersbyw96e phsmd code z9p+7germanium transistorby527equivalent byd33dbax12bb212bb515bby31
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IN3599
Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
Contextual Info: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5
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1n194a1n1951k2001n201+16jn202in48291n4j30mp035mpd302mpb401in35991n91681n4242in485in6251n20s1n43891n4243in648in458a
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1N4151f
Abstract: 1N4152 ditty 1N4151 1N4153 1N4154 J103 1N4151-1N4152-1N4153-1N4154
Contextual Info: 1775470 C O D I SEMICONDUCTOR IN C -L U ,-— TO 90D 0 0 5 7 9 D y_ — // DE | l 7 7 S 4 7 D □ □□□57ci 5 äliiä CODI Semiconductor, Inc. 1N 4151-1N 4152-1N 4153-1N 4154 HIGH SPEED DIODES • SILICON PLANAR EPITAXIAL D O -35 OUTLINE • C .4 p F MAX
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l77s47d1n4151-1n4152-1n4153-1n41541-800-232-cqdi7033il+71n4151f1n4152ditty1n41511n41531n4154j103
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1n6227silecgg 841n623+62g300chn 543ic hxj 20381n52398in52401n48 zener diode
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IN3599
Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
Contextual Info: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0
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dd0db05in3599in433ain625+71n30681n2181n4147in6481n30691n3067in485
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