1N4532 Search Results

transformer prv

Abstract: spark gap 1200v 4ja42ieh20abi 1N4532 SCR Handbook, General electric 1N4529 silicon controlled rectifier 1N4530 1N4531 1N4536
Contextual Info: CONTROLLED AVALANCHE I Silicon Rectifier 35A Avg. 1N4529-30 I 1N4531 SEE PAGE 205 1N4532-34 SEE PAGE 262 1N4536 SEE PAGE 205 Up to 1200V CONTROLLED AVALANCHE RECTIFIERS FROM GENERAL ELECTRIC Feature These Advances in Silicon Rectifier Diode Applications: Self-protection against norm al voltage transients. D issipates up to 12,000 w atts

1N4151 equivalent

Abstract: Diode Equivalent 1n4151 1N4532 1N4152 1N4151 1N4153 1N4154 1N4454 MHD618 in4454
Contextual Info: 1N4154 S E E PAG E 205 Silicon r -— i Diodes 1N4151.2.3 1N4454 1N4532,3,4 This fam ily of General Electric silicon signal diodes are very high speed sw itching diodes for computer circuits and general purpose applications. These diodes incorporate an oxide passivated planar struc­

1N4447-A

Abstract: 1N4532 1S953 1N4448-A is805 1N4446 1N4447 1N4448 1N4449 1N4454
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536

1N4532

Abstract: IN4532 S0068 1N4531 IN4531 IR 10D DIODE
Contextual Info: Philips Semiconductors Product specification High-speed diodes 1N4531 ; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leadedglass SOD68 DO-34 package The 1N4531, 1 N4532 are high-speed switching diodesfabricated in planar technology, and encapsulated in hermetically sealed leaded glass

1N4532

Abstract: 1N4531
Contextual Info: • ^ 5 3 1 3 1 □Q2bci0b Til ■ APX N AMER PHILIPS/DISCRETE 1N4531 1N4532 blE T> HIGH-SPEED SILICON DIODES Diodes in the sub-m iniature DO -34 envelope intended fo r fast logic and general purpose applications. Because o f th e ir small size the diodes are especially suitable fo r m o u n tin g in m in ia tu re assemblies e.g.

IN3064

Abstract: in4454 1N4454 diode in3064 1N3064 1N4532 diode 1n4454 1N4454-1 JANTX1N3064
Contextual Info: COMPUTER D ODE JAN &JANTX1N3064 4454; JAN, JANTX & JANTXV 1N4454 ja n , j a n t x & ja n t x v 1N4454-1 1N4532; JAN, JANTX & JANTXV 1N4532 V s V S IV iru I u rv U I \ J U C. in General Purpose Switch¡ng ABSOLUTE MAXIMUM RATINGS, AT 25°C FEATURES R e v e rse B re a k d o w n V o ltag e .7 5 V

1N4532

Abstract: 1N4531
Contextual Info: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings Ta = 25oC Continuous Reverse Voltage Repetitive Peak Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Symbol Value Unit VR 75 V VRRM 75

DL-41 package

Contextual Info: Micmsemi Ultra Fast Rectifiers 1N4532 UES1001 UF105 UF105SM UFS105G UFS105J DLSF11 ER1A ES1A SF11 UF4001 UF4001GP UES1002 UF110 UF110SM UFS110G UFS110J DLSF12 ER1B ES1B SF12 UF4002 UF4002GP UES1003 UF115 UF115SM UFS115G UFS115J DLSF13 DLSF14 ER1C ES1C SF13

Contextual Info: TYPE 1N3064 SILICON SWITCHING DIODE B U L L E T IN N O . D L -S 7 3 9 1 1 4 , S E P T E M B E R 1 9 6 6 - R E V I S E D M A R C H 1 9 7 3 FA ST SWITCHING DIODE • Rugged Double-Plug Construction • Electrically Equivalent to 1N4454 DO-35 and 1N4532 (DO-34)

in4454

Abstract: 1N3064
Contextual Info: COMPUTER DIODE w m r u I t n l/ iv / u c , ja n & ja n t x 1N3064 1N4454; JAN, JANTX & JANTXV 1N4454 ja n , ja n t x & ja n t x v 1N4454-1 1N4532; JAN, JANTX & JANTXV 1N4532 General Purpose Switching ABSOLUTE MAXIMUM RATINGS, XT 29*C Reverse Breakdown Voltage . 75V

MIL-PRF-19500/144

Abstract: 1N4532
Contextual Info: FEATURES 1N4532 • • • • • 1N4532 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/144 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, Sine, 1uS:

1N4531

Abstract: 1N4534 1N4536
Contextual Info: 1N4531 1N4534 1N4532 1N4536 1N4533 Diode, switching, leaded Dimensions Units : mm These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHODE BAND <¿0 4 » 0 1 Features -f • available in DO-34 package

in4531

Abstract: 1N4532 IN453 1N4531 IN4532 DO-34
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed diodes

in4531

Abstract: 1N4532 1N4531 IN4532
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leaded glass

1N4532

Abstract: 1N4531
Contextual Info: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode Max. 0.45 Min. 27.5 Max. 1.9 Black Cathode Band Black Part No. XXX Max. 2.9 Min. 27.5 Glass Case DO-34 Dimensions in mm Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM

1N4532

Abstract: 1N4531
Contextual Info: 1N4531 ~ 1N4532 HIGH SPEED SWITCHING DIODES DO - 34 Glass FEATURES : • High switching speed: max. 4 ns 1.00 25.4 min. 0.063 (1.6 )max. • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V • Repetitive peak forward current:max. 450 mA.

PJ 949 diode

Contextual Info: bbSBiai ooeb'iob m N AMER PHILIPS/DISCRETE « apx bSE 1N4531 1N4532 D HIGH-SPEED SILICON DIODES Diodes in the sub-miniature DO-34 envelope intended fo r fast logic and general purpose applications. Because o f their small size the diodes are especially suitable fo r mounting in miniature assemblies e.g.

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product data sheet Supersedes data of April 1996 1996 Sep 03 NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leaded glass

1N4532

Abstract: 1N4531 IN4531 IN4532
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product data sheet Supersedes data of April 1996 1996 Sep 03 NXP Semiconductors Product data sheet High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION • Hermetically sealed leaded glass

1N4532

Abstract: 1N4531
Contextual Info: 1N4531, 1N4532 SILICON EPITAXIAL PLANAR DIODES Fast Switching Diode. Absolute Maximum Ratings Ta = 25oC Continuous Reverse Voltage Repetitive Peak Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Symbol Value Unit VR 75 V VRRM 75

UDZ6.2B

Abstract: 1SS142 RLZ5243B mtz 9.1 j
Contextual Info: Index Index 1SR35-400A 1SR124-400A 1SR139-400 1SR139-600 1SR 153-400 1SR154-400 1SR155-400 1SR156-400 1SR 159-200 1N914 58 1N916 58 1N4004A 133 1N4148 58 1N4150 58 1N4153 58 1N4448 58 1N4531 63 1N4532 63 1N4533 63 1N4534 63 1N4536 63 1N4606 58 4 1N5000B 1N5230B

Switching Diodes

Abstract: 1N4532 1N4531
Contextual Info: TH97/10561QM 1N4531 ~ 1N4532 TW00/17276EM IATF 0060636 SGS TH07/1033 HIGH SPEED SWITCHING DIODES DO - 34 Glass FEATURES : • High switching speed: max. 4 ns 1.00 25.4 min. 0.078 (2.0 )max. • Continuous reverse voltage:max. 75 V • Repetitive peak reverse voltage:max. 75 V

1N4532

Abstract: 1N4448-A 1N4446 1N4447 1N4448 1N4449 1N4450 1N4454 1N4531 1N4533
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536

1N4532

Abstract: 1S954 1N4536 1N4446 1N4447 1N4448 1N4449 1N4450 1N4454 1N4531
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536