1N4606 Search Results

Contextual Info: T O S H I B A -CDISCRETE/OPTOÏ 9097250 TOSH I BA <D ISCRETE/OPTO — - ,67C 092 94 Silicon Epitaxial Planar Type*_ D 'T~03 ~Q< S Î 1N4606 Diode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS.

1N4448R

Contextual Info: 1N4148 1N914 1N 916 1N4150 1N4153 1N4448 1N4606 These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. Features • Dimensions Units : mm CATHODE BAND ¿0.5±0.1 V available in DO-35 package c • part marking, see following table

UDZ6.2B

Abstract: 1SS142 RLZ5243B mtz 9.1 j
Contextual Info: Index Index 1SR35-400A 1SR124-400A 1SR139-400 1SR139-600 1SR 153-400 1SR154-400 1SR155-400 1SR156-400 1SR 159-200 1N914 58 1N916 58 1N4004A 133 1N4148 58 1N4150 58 1N4153 58 1N4448 58 1N4531 63 1N4532 63 1N4533 63 1N4534 63 1N4536 63 1N4606 58 4 1N5000B 1N5230B

1n4148

Abstract: 1n916 1N4606 1N4150 diode 1N916 1n4148 general diode 1n4153 914-R
Contextual Info: 1N4148 1N914 1N916 1N4150 1N4153 1N4448 1N4606 Diode, switching, leaded Dimensions Units : mm These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHODE BAND ¿ 0 . 5 ± 0.1 Features • available in DO-35 package

1N4007 TOSHIBA

Abstract: diode 1n4007 toshiba IN5625 IN5060 diode scr C106D MAC525-6 1N4004 toshiba C122B 1n914 surface mount diode 1N4148 surface mount
Contextual Info: 9097250 T OS H I B A CD I S C R E T E / O P T O > TOSHIBA iDISCRETE/0PT0> 90D 16494 D Tzòt~ ts DE l'iO'iTSSO 001b4TM 7 T 'O -b 'O ? Diodes Switching Diode DO-35 VB(V) 2 5 (3 0 ) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B

IN5062

Abstract: IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5624 IN5060 diode
Contextual Info: Diodes Switching Diode DO-35 V„(V) 25(30) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B 1N916, A, B 1N4149 1N4446 1N4447 1N4448 1N4449 1N4148 Surface M ount Diode V„(V) 30 Iq(MA) DLN4152 150 75 DLN914, A, B DLN916, A, B

1N4606

Contextual Info: TYPES 1N4606 THRU 1N4608 SILICON SWITCHING DIODES B U L L E T I N NO. D L - S 739271, O C T O B E R 1 9 6 6 - R E V I S E D M A R C H 1973 FA ST H IG H -C U R R E N T C O R E -D R IV E R SW IT C H IN G D IO D E S • Rugged Double-Plug Construction •mechanical data

ultra low drop, high current diode

Abstract: 1N4606 ultra low forward voltage diode ultra low drop forward voltage diode
Contextual Info: 7 ô 2 flcm ÜDÜfiT?! 047 H R H r i noNm Page Specification Prodi Ü ïtra high speed switching diode Type 1. PRODUCTS ] ol 2 1N46 0 6 U ltra high Speed Switching Diodes Silicon E p itax ial Planar 2. TYPE 3. APPLICATION 1N4606 U ltra high speed switching

1N4606

Abstract: TOSHIBA 1N4606 toshiba t5c
Contextual Info: TOSHIBA {D IS CR ETE /OP TO} 9097250 TOSHIBA <DISCRETE/OPTO> — 67C 092 94 . Silicon Epitaxial Planar Type- D 7~~£>3-Q 1N4606 Diode TENTATIVE Unit in mm COMMUNICATION AND INDUSTRIAL APPLICATIONS. HIGH VOLTAGE, ULTRA HIGH SPEED SWITCHING APPLICATIONS. MAXIMUM RATINGS Ta=25°C

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

1N34A reverse recovery

Contextual Info: SEMICONDUCTOR TECHNOLOGY^ OSE I | fll3b4Sfl G D D D a S D S r^/"ôr - DIODES STI Type Material Maximum Peak Reverse Voltage volts) Maximum Forward Voltage (volts) Forward Current (mA) Reverse Current (ua) 25 “C 1N34A 1N60A 1N128A 1N198A 1N251 Ge Ge

SS321

Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package

1N4447-A

Abstract: 1N4532 1S953 1N4448-A is805 1N4446 1N4447 1N4448 1N4449 1N4454
Contextual Info: - 148- 41 Jig 1 S fS] # -k & m % m # t rr n s & C t(p F ) m 1N4446 1N4447 1N4447 1N4447 1N4448 1N4448 1N4448 1N4449 1N4449 1N4449 s í± £ H i a — A H i a — A B i a — A 1N4450 1N4450 1N4454 1N4454 1N4531 H i a — A 1N4532 1N4533 1N4534 1N4536 1N4536

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4

Contextual Info: $ 4 # — K /D iodes IN S e rie s • JEDEC 1N Series 1 -K Switching Diodes JEDEC Standards • [2/Dimensions Unit : mm JED EC « fè&LLZ, £<7>1N v ' J - X f c t l i t l , T Î S ^ Î - Î '< 7 ) T '^ W < tc è^ \ 1N Series conforming to JEDEC Standards are also available so that

2N2926 equivalent

Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A

AMERICAN POWER DEVICES 1n914

Abstract: 1N5209 1N3064 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619
Contextual Info: 3541563 FENWAL 83D 00920 E L E C T R O N I C S / APP DE ^ 3 S m S b 3 03 ODQD^BO D I 7 - -j . PLANAR DIODES DO-35 Case Type Peak Inverte Voltage Minimum Forward Current Maximum Capacitance Maximum Reverse Current @ 25*C lr /tA @150*C lr mA ~V T~ V

1S2473

Abstract: 1SS278 RB721Q 1SS252 1N3606 1SR35-100A 1SS139 LTZ-MR15 RB015T-40 LTZ-MR15 LED
Contextual Info: Diodes Quick reference I Molded Application Vr V MSR ( ^ 2 .5 ) I SIP9Pin j I TO-220FD 35 High-speed Ultra High-speed Low-leakage High-voltage ^ P a g e .1 6 0 ea Glass types Package I DO-35 M 1.8) Part No. 1SS2787 CD DO-34 (<>1.8) USD ( ¿ 1 .8 ) DO-41 ! ¿2.7)

1SA153-100

Abstract: RB7210 1ss135 axial 1SS291 1S2473 1SS135 DO-41 package 1N4148 1SR139-600 1SS142 LTZ-MR15
Contextual Info: RDNVTI The Class and Basic Ordering Units for Standard and Semi-standard Products •P le a s e note the following when placing an order. The quantity in an order must be in multiplies of the basic order unit. •R e m a rk s : Standard products O : Semi-standard products

A114D

Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)

PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
Contextual Info: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

1s5355

Abstract: 1N4148 SMD LL-34 1N914 CJ 4148 1N4148F ISS356 KT106 4152J ROHM 1SS292 SM 4151 ROHM RLS
Contextual Info: — K /D io d e s • « * Ä m m ¿i. • m m m & • s * 3 S * ; í j & í í - i é • îit/^ coxfoî,—ÆcoÂfflA'oZ'^ticu it= äfc> - ì ì X c Fi L Î LTl±, *HU í-3±á4± Ì X-ffllPpll'-ä-tiT? v.'„ S t t T 't í , y y T - Kc7 S„ap i ; o é ä I T I J ,