1N60A Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

1n60ag

Abstract: 1N60A 1n60al T92 DIODE XT92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60A Power MOSFET 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

1n60b

Abstract: 1N60 diode 1N60 mosfet 1N60A 600V 2A SOT223 MOSFET N-channel 1N60G 1N60-B 1N60 diode 1n60 UTC1N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

lN34A

Abstract: Germanium itt
Contextual Info: SEMICONDUCTORS7 " le m lt r o n SemitronicsCorp. 'Tz'O I-*0 7 INTEX/ SEMITRONICS CORP germanium diodes Max. P tik iH lf ll MM. Farward V o lt«« vo lti Farward Currant <mA) Ravarsa Currant (MÂ) Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m Vottap

1N60A

Abstract: 3VD212600YL
Contextual Info: 3VD212600YL 3VD212600YL 高压MOSFET芯片 描述 Ø 3VD212600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；

Contextual Info: B K C INTERNATIONAL 30E D B€ • Î I T ^ Û B D0003ES 2 ■ 'T 'O l - ö ”? 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 BKC International Electronics Inc. Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE

1N48 zener

Abstract: 1N770 1N418 1N448 1N34 IN452 1N104 1N126 1N38A 1N46
Contextual Info: AM ER I C A N M I C R O S E M I C O N D U C T BSE D • G 7 1 c1775 O O O O O C H b « A M R T - d - C H ZENER DIODES CAN YOU GET AN YO NES ATTENTION CUSTOM TOLERANCE Z ENE R * * TOLERANCES * Z E N ER * 1/2. * LARGE * EAST TO OR AND * 1 SMALL PROMPT, BETWEEN

1n45b

Abstract: 1N48 diode T11G T26G IN283 T13G 1N849 DIODE 1N418 IN457A t20g
Contextual Info: 86D 0 0 3 3 5 _ 3 8 6 9 7 2 0 GENERAL DIO D E CORP GENERAL DIODE CORP fit ù 7 D DÎT| 3flfa17BG 0000335 fl J “ GERMANIUM DIODES Case Style — D0-7 TYPE \ \•% % 1N34 1N34A 1N38 1N38 1N3BA 75 75 36 125 125 1.0 1.0 1.0 1.0 1.0 1N38B 1N44 1N45

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

600V 2A SOT223 MOSFET N-channel

Abstract: 1n60b 1n60 diode T92 DIODE 1N60 mosfet MOSFET 50V 100A TO-220 1N60 TO92 diode 1n60 Diode AA3 1N60G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 „ DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF)