1Nu5
Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
Contextual Info: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p
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1n34a1n38a1n38b1n52a+151n55b1n56a1n57a1n58a1n60a1n63a1nu5in4181ns4in2701n42un309in731n461n128
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1N2222A
Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244
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oqoos11do-41case1n35491n4001+151n40021n40031n40041n40051n40061n40071n2222a1n2222in2071a1n39341n3578in222in1342in5054in5053
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1N119
Abstract: INI183 1N1183
Contextual Info: jGrnitronicr - d e v ic e d a t a 6 4 C O M M E R C I A L S l f l E E T . m E t P O n t . M .Y . 1 1620 T E L . IS 16 6 2 3 - 9 4 0 0 FAX 5 1 0 ) T L X 2 9 S S 3 0 S E M I UR «33 -E 934 1Nl 1 83thru 1n1 1 9 0 VR—to 600 V lo = 35 A M&Jium current silicon rectifiers. Unique double
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83thru1n1183r1n11841n1185+511ntinuedgddg47b1n119ini1831n1183
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LT3973-3.3
Abstract: IN4012 in401 IN1730 IN1118 IN3288 in2063 IM361 IN-17 1N1731
Contextual Info: ^ discrete devices | jemitronicr hot line TO LL FREE NUM BER 800-777-3960 silicon rectifiers stud mounted silicon power rectifiers DO-4 case style — Maximum Peak Reverse Voltage volts Type Maximum Average Forward Current (Amps) @ Case Temp. (°C ) Maximum
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1n12031n1203a1n1203b1n1204+121n1204a1n1204blt3973-3.3in4012in401in1730in1118in3288in2063im361in-171n1731
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LT3973-3.3
Abstract: L1117T-3.3 LT3971-3.3
Contextual Info: jomitronicr discrete devices SEMICONDUCTORS Semitronics Corp. silicon rectifiers cont'd stud mounted silicon power rectifiers DO-4 case style — cont’d T »« Maximum Maximum Average Forward Peak Reverse Current (Amps) Voltage @ Case Temp. (°C) (volts)
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1nu88a1n11891n1189a1n1190+4i190alt3973-3.3l1117t-3.3lt3971-3.3
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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1N93A
Abstract: 2N78A MIL-S-19500 1N1184 1N249B 1N3713 1N4532 1N4148 JANTX 1N4148 JAN 2n526
Contextual Info: SILICON RECTIFIERS MEDIUM CURRENT 20 TO 40 AMPERES JEDEC 1N2488 50B 1N1195A-98A 1N2154-6Q 1N1183-90 1N3765-68 1N5332 1N1183A40A 1N3899-3903 1N3909-13 1N4529-30 GE TYPE 1N3208-14 A40F-M A44F-M ELEC TR IC A L SPECIFICATIO NS I fm av Max. average forward cur
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1n1183-901n248b-50ei1n1195a-98a1n2154-60+161n3765-681n11831n3899-39031n3909-131n4529-301n53321n93a2n78amil-s-195001n11841n249b1n37131n45321n4148 jantx1n4148 jan2n526
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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1N1120
Abstract: 1N2484 1N342 1N2226
Contextual Info: - x _ S B . _ _ _ c m i c r o 2 7 E » MäbTEMb • M äb T EM b IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T »» 1N3241 1N3242 1N3243 1N3244 1N3245 600 800 ■ 1000 1200 1500
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IN3492
Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Contextual Info: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90
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3e120450e120r450f05450f05r+16450f10450f10r450f20450f20r450f30450f30rin3492sg 4001 diode1na4md91435c101n20b1n67a0a202 diodein34951469r
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A44E
Abstract: GE A40B 14C40 1N2481 A40E in3900 1N5332 1N1184 1N3899 A44M
Contextual Info: SILICON RECTIFIERS MEDIUM CURRENT 20 TO 40 AMPERES JEDEC 1N2488 50B 1N1195A-98A 1N2154-6Q 1N1183-90 1N3765-68 1N5332 1N1183A40A 1N3899-3903 1N3909-13 1N4529-30 GE TYPE 1N3208-14 A40F-M A44F-M ELEC TR IC A L SPECIFICATIO NS I fm av Max. average forward cur
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lN34A
Abstract: Germanium itt
Contextual Info: SEMICONDUCTORS7 " le m lt r o n SemitronicsCorp. 'Tz'O I-*0 7 INTEX/ SEMITRONICS CORP germanium diodes Max. P tik iH lf ll MM. Farward V o lt«« vo lti Farward Currant <mA) Ravarsa Currant (MÂ) Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m Vottap
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1n34a1n38a1n388ln34a+1germanium itt
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1nu8
Abstract: 560-2 O287 n4795a 1N4803 N4799A 1NU815A
Contextual Info: * I.-,• i t j , ‘ a . f a M > i w M < w w > i B i > i a _ - 3D7MM7M DODOllt, 7 I 30 7 ^74- EASTRON CORP '/7 Eastron £ p CHARACTERISTICS AND RATINGS @ 25°C EIA Capacitance 0 VR > Vdc 4 f * 1 MC Paft
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