1N119 Search Results

1N1436

Abstract: 1N2021 1N1191 1N1192 1N1193 1N1194 1N1196 1N1197 1N1198 1N2154
Contextual Info: . ELITE SEMICONDUCTOR PRODUCTS, INC. 860North Richmond Ave. Lindenburst, New York 11757 PH 631-884-8400 I FX 631-884-8427 www.elitesemi.com STANDARD RECOVERY RECTIFIERS 40 amps - 50 to 1200 volts DO 5 DO203AB Peak Reverse Voltage JEDEC Numbers 1N1191,A

1N1206RA

Abstract: i2t graph 1N1199A 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N5331
Contextual Info: 1 Silicon Rectifiers 1N1195 SE E PAG E 203 1N1199A-1N1206A 1N1199RA-1N1206RA 1N3670A-1N3673A 1N5331 These diffused junction rectifiers are designed specifically to provide high perform ance fo r ap p li­ cations up to 22 am peres A verage F orw ard C u rren t in single-phase applications w ith repetitive

1N1190A

Contextual Info: MCC 1N1183A THRU 1N1190A
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# Features • • • • 40 Amp Rectifier 50 to 600 Volts High Surge Capability Low Leakage Low Forward Voltage Drop

1N1190

Abstract: PBY306 1N3768 1N1183 1N1183R 1N1184 1N3766 PBY301 PBY302 SW11
Contextual Info: 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2005-01-31 Nominal Current Nennstrom 7 Repetitive peak reverse voltage Periodische Spitzensperrspannung

Contextual Info: 1N1190+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)140# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)35 @Temp. (øC) (Test Condition)140

Contextual Info: 1N1191 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current18 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage50“ I(FSM) Max.(A) Pk.Fwd.Sur.Cur.125 V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)30 @Temp. (øC) (Test Condition)25õ

Contextual Info: 1N1190R+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage2.5 @I(FM) (A) (Test Condition)500 @Temp. (øC) (Test Condition)25#

DO-203AB Package

Abstract: 1N1190 1N1184 1N1186 1N1190 JANTXV 1N3768
Contextual Info: 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 R Available on commercial versions High Reliability Silicon Power Rectifier Qualified per MIL-PRF-19500/297 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high

DIODE MARKING wX

Contextual Info: 1N119WS SILICON EPITAXIAL PLANAR DIODE PINNING APPLICATIONS ․High speed switching DESCRIPTION PIN 1 Cathode 2 Anode 2 1 WX Top View Marking Code: "WX" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit

Contextual Info: 1N1188 thru 1N1190R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

Contextual Info: 1N1199A thru 1N1206AR Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 12 A Features • High Surge Capability • Types up to 1000 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

1N119

Abstract: 1N1198A
Contextual Info: 1N1198A/AR SILICON RECTIFIER DESCRIPTION: The 1N1198A/AR is a Power Rectifier for General Purpose Power Supply Applications. Cathode Connected to Case. • 1N1198A = Anode to Stud • 1n1198AR = Cathode to Stud PACKAGE STYLE DO- 5 MAXIMUM RATINGS IF 20 A AVG @ TC = 150 °C

1N119

Abstract: 1N120
Contextual Info: 1N1199B thru 1N1206B MOTOROLA MEDIUM-CURRENT SILICON RECTIFIERS M E D IU M -C U R R E N T S ILIC O N RECTIFIERS Compact, hig h ly e ffic ie n t silicon re ctifie rs fo r m e diu m -curre n t a pp licatio n s requiring: 5 0 - 6 0 0 VOLTS 12 A M PERES • High C urrent Surge —

1N3766-1N3768

Abstract: 1N1184 1N1184R 1N1186R 1N1188 1N1188R 1N1190 1N1190R INI186
Contextual Info: Military Silicon Power Rectifier 1N1184-1N1190, 1N3766— 1N3768 Dim. In ch e s Millim eter M inim um M a xim u m M inim um M axim u m N o te s Notes: 1. 1 / 4 - 2 8 U N F - 3 A 2. Full t h re a d s within 2 1 / 2 th re a d s 3* For R e v e rse P o larity add F

1N1184A

Abstract: 1N1186A 1N1188A 1N1190A 1N1183A 1N1183RA 1N1183R D0203AB
Contextual Info: MO TO R O L A SC D I O D E S / O P T O b 3 b 7 2 5 5 D G ñ b 2 1 b T3G • H O T ? bME D 1N1183A MOTOROLA SEMICONDUCTOR ■ thru TECHNICAL DATA 1N1190A 1N1190A is a Motorola Preferred Device 4 0 -A M P MEDIUM-CURRENT RECTIFIERS . . . fo r a p p lic a tio n s re q u irin g

70HF120

Abstract: 85HF120 88HF120 85hf80
Contextual Info: International llORlRectifier Rectifiers Standard Recovery 40-85 Amps Part Number •f <AV TC Vr r m V) 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 50 100 150 200 300 400 500 600 43HF10 43HF20 43HF40 43HF60 43HF80 43HF100 43HF120 43HF140

1N1183A(R)

Contextual Info: 1N1183A R T HR U 1N1190A(R) DACO SEMICONDUCTOR CO., LTD. Features STANDARD RECOVERY DIODE STUD TYPES 40A 40Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM Maximum Ratings Operating Temperature: Storage Temperature: Part Number 1N1183A(R)

Contextual Info: m 1N1198A/AR \ \ SILICON RECTIFIER DESCRIPTION: The 1N1198A/AR is a Power Rectifier for General Purpose Power Supply Applications. Cathode Connected to Case. • 1N1198A = Anode to Stud • 1n1198AR = Cathode to Stud MAXIMUM RATINGS lF 20 A AVG @ Tc = 150 °C

1N1190

Contextual Info: 1N1190/R asi SILICON RECTIFIER DESCRIPTION: The 1N1190 Rectifier is Designed for General Purpose Power Supply Applications. • 1N1190 = Anode to Stud • 1N1190R = Cathode to Stud MAXIMUM RATINGS 600 V V rwM 35 A lo AVG @ Tc = 140 °C Tj -65 °C t o +190 °C

Contextual Info: DIGITRON SEMICONDUCTORS 1N1199 A,B -1N1206(A,B) SILICON POWER RECTIFIER MAXIMUM RATINGS Symbol 1N1199 Peak reverse voltage Parameter VR 50V Operating & storage temperature range TJ, Tstg -65 to +200°C RθJC 2.5°C/W junction to case Maximum thermal resistance

INI200A

Abstract: 10-32 UNF 1N1206A 1N1199A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A
Contextual Info: EDAL INDUSTRIES INC 4SE D • aO^S?]^ 000D27S T77 H E D L FLATS PIV SEE CHART *0 12A @ Js 240 AMPS Vf 1.3 V @ Zr 3.0 mA @ @ STYLE DQ4 FOR REVERSE POLARITY USE SUFFIX R PART NUMBER 1N1199A INI200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A PIV 50 100 150

Contextual Info: 1N1198 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current25 @Temp (øC) (Test Condition)145# V(RRM)(V) Rep.Pk.Rev. Voltage600“ I(FSM) Max.(A) Pk.Fwd.Sur.Cur.125 V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)30 @Temp. (øC) (Test Condition)25õ

Contextual Info: 1N1190R+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current35 @Temp (øC) (Test Condition)150# V(RRM)(V) Rep.Pk.Rev. Voltage600 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500 V(FM) Max.(V) Forward Voltage2.5 @I(FM) (A) (Test Condition)500 @Temp. (øC) (Test Condition)25#

IN1190A diode

Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Contextual Info: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series