1N695 Search Results

Contextual Info: <^£.mi-dondu ikoi ^Pr , Line. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TYPE FEATURES 1N695A Low forward voltage drop —low power consumption Thirty years of proven reliability —one million hours mean lime between failures (MTBF)

1N695

Abstract: DSAIH0002555
Contextual Info: IITTTÖB OOOQ333 1 3QE D B K C INTERNATIONAL T - 0 1 ,-0 7 6 Lake Street PO Box 1436 Lawrence, M A USA 01841 \ Î Æ I-j \ j BKC International Electronics Inc. Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES 1N695 TYPE

1N770

Abstract: 1N910 1N911 1N695 1N695A 1N771 1N771A 1N771B gold bonded germanium diode BKC International
Contextual Info: IITT^ÛB 0DQQ333 1 3QE D B K C INTERNATIONAL [ 1 4 BKC " International Electronics Inc. L .J X i T - O 3 .-0 7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N695

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N34A reverse recovery

Contextual Info: SEMICONDUCTOR TECHNOLOGY^ OSE I | fll3b4Sfl G D D D a S D S r^/"ôr - DIODES STI Type Material Maximum Peak Reverse Voltage volts) Maximum Forward Voltage (volts) Forward Current (mA) Reverse Current (ua) 25 “C 1N34A 1N60A 1N128A 1N198A 1N251 Ge Ge

IN34A

Abstract: 1N215 1N21 diode 1N207 1N218 1N87 uua 170 1N271 1N200 1N137B
Contextual Info: GENERAL PURPOSE DIODES, C1 CAN minimum Breakdown Voltage ISl Part Number i i i i l i l i Continuous Average Forward Current h |m * ] Maximum Reverse Current 1. tlA T, = 2 5 1C T.= 100 C V* (Volts) 40 20 50 60 0.03 0.01 1N200 1N2Q1 1N202 1N203 1N204 7.5

1Nu5

Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
Contextual Info: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p

AA119 leakage current

Contextual Info: ^£,mi-L.onaactoi ^Products., 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. GERMANIUM DIODES TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 1 Gold Bonded Germanium Diodes in DO-7 Package Peak Inverse Voltage (WIN.) (PIV) Type Volts 65 AA113

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

Q265

Abstract: diode germanium 1n270 1N695 transitron matched diodes Q252 1N270 1N3066 transitron 1n648 S555G silicon diode and germanium
Contextual Info: MATCHED DIODE QUADS Transitron's efficiency E R - 4 case epoxy encapsulated diode quads feature high silicon or germanium diodes with matched forward charac- teristics. Individual diodes allow the user maximum circuit configurations versatility. TABLE I SILICON DIODE TYPES

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

AA119

Abstract: AA119 leakage current 1N38A OA91 1N3592 OA90 OA79 AA143 AA138 OA99
Contextual Info: G G o ld B o n d e d G e rm a n iu m ermanium iodes MIIIH D io d e s in D O -7 Package Peak Inverse Voltage MIN. Maximum Reverse leakage current Maximum Forward Voltage Drop w lF Volts mA 1.1 0.18 1.0 1.5 1.5 0.5 1.0 0.45 0.45 0.75 0.45 2.2 1.0 1.0 1.0

Germanium diode

Abstract: 5 amp diode rectifiers Germanium Diode OA91 aa117 diode diode 2 Amp rectifier diode 2 Amp zener diode DIODE 1N649 germanium rectifier diode OA95 diode
Contextual Info: Index f P art N Part Number Description 1N34A 1N38A 1N60A 1N100A Gold Gold Gold Gold 1N270 Gold Bonded Germ anium Diode Gold Bonded Germanium Diode Gold Bonded Germanium Diode Low Leakage Silicon Diodes Low Leakage Silicon Diodes Low Leakage Silicon Diodes

OA47 germanium

Abstract: AA118 AA218 diode aa118 AAZ15 1N695 IN34A OA90 iN87 AA117
Contextual Info: B IC C INTERNATI ONAL 30E D • H 7 n f l 3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270 1N276

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

1K60

Abstract: 1K34A Diode Equivalent 1N87 Diode Equivalent 1N34A FDH444 1N270 diode equivalent equivalent components of diode 1N34A 1n3469 1N996 1N645
Contextual Info: Other Diodes Part No. CrossReference Operating Temperature: -65o C to 160 o C Power Dissipation Max. Avg. Rect. Current Peak Voltage Continuous Rev. Current Forward Voltage Max. Reverse Recovery Time Package Pd mW Io(mA) VRRM (V) IR (nA)@VR (v) V F (V)@IF (mA)

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1n6963

Abstract: 1N6979 1N6970 1N6950 1N6956 1N6986 1N6972 1N6978 1N6966 1N6953
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 March 2004. INCH-POUND MIL-PRF-19500/718 12 December 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT