1N3666 Search Results

Scans-0016000

Contextual Info: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart­

DSAIH0002537

Contextual Info: B K C I NTERNATI ONAL 03E D | QGQD2Sfl Type No. 1N3666M1 JAN GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681 -0392 | TeleFax (617) 681-9135 m Telex 928377 FEATURES Low forward voltage drop— low power consumption

Contextual Info: 1N3666+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)500u V(FM) Max.(V) Forward Voltage1.0

Contextual Info: 1N3666+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)500u V(FM) Max.(V) Forward Voltage1.0

Contextual Info: 1N3666 General Purpose Fast Rectifier 0.19 Diodes High-Speed/Fast Recovery Diodes G. Page 1 of 1 Enter Your Part # Home Part Number: 1N3666 Online Store 1N3666 Diodes General Purpose Fast Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits

Contextual Info: 1N3666+JANTXV Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)500u V(FM) Max.(V) Forward Voltage1.0

Contextual Info: 1N3666-2 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)30 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)200m

Contextual Info: 1N3666M1 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)500u V(FM) Max.(V) Forward Voltage1.0

Contextual Info: 1N3666-2+JANTXV Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)30 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0

Contextual Info: B K C INTERNATIONAL 3QE J> • IITTTÔB 0000340 ■= ■¡''p 0 3 - 0 7 I BKC International Electronics Inc, 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617) 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N3666

Contextual Info: B K C INTERNATIONAL QBE D | llT'HflB □OODES'l 4 Type No. 1N3666M2 JAN 7=as-ar GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 FEATURES

1N91 DATASHEET

Abstract: DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60
Contextual Info: Germanium Diodes DO-1 and DO-7 Cases DO-1 TYPE NO. CASE 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7

dr 25 germanium diode

Abstract: 1N3666 A11SC U1 4011
Contextual Info: 1 INCH-POUND 1 HIL-S-19500/226B n . i i i n p TQQn S B P f R S n i # -MIL-S-i9500/2z6A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIOOE, GERMANIUM. SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV T h is s p e c i f i c a t i o n i s approved f o r use by a l l D ep art­

Contextual Info: 1N3666-2+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)30 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.0

Contextual Info: 1N3666M2 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current200m V(RRM)(V) Rep.Pk.Rev. Voltage80 t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)30m @I(R) (A) (Test Condition)500u V(FM) Max.(V) Forward Voltage1.0

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N34A reverse recovery

Contextual Info: SEMICONDUCTOR TECHNOLOGY^ OSE I | fll3b4Sfl G D D D a S D S r^/"ôr - DIODES STI Type Material Maximum Peak Reverse Voltage volts) Maximum Forward Voltage (volts) Forward Current (mA) Reverse Current (ua) 25 “C 1N34A 1N60A 1N128A 1N198A 1N251 Ge Ge

IN34A

Abstract: 1N215 1N21 diode 1N207 1N218 1N87 uua 170 1N271 1N200 1N137B
Contextual Info: GENERAL PURPOSE DIODES, C1 CAN minimum Breakdown Voltage ISl Part Number i i i i l i l i Continuous Average Forward Current h |m * ] Maximum Reverse Current 1. tlA T, = 2 5 1C T.= 100 C V* (Volts) 40 20 50 60 0.03 0.01 1N200 1N2Q1 1N202 1N203 1N204 7.5

1N295

Abstract: diodes 1N34A 1N91 diode 1N34A DO-7 1N93 1N91 1N92 1n270 1N4502
Contextual Info: Germanium Diodes* DO-1 and DO-7 Cases DO-7 DO-1 TYPE NO. CASE TECHNOLOGY VRftM io VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT GOLD BONDED POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . 1N67A DO-7 90 50 1.0 5.0

1Nu5

Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
Contextual Info: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

AA119 leakage current

Contextual Info: ^£,mi-L.onaactoi ^Products., 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. GERMANIUM DIODES TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 1 Gold Bonded Germanium Diodes in DO-7 Package Peak Inverse Voltage (WIN.) (PIV) Type Volts 65 AA113

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A