1N216 Search Results

Contextual Info: 1N2164 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N2164 Availability Online Store

Contextual Info: 1N2160 asi SILICON RECTIFIER DESCRIPTION: The 1N2160 is a Power Rectifier Designed for General Purpose Power Supply Applications. MAXIMUM RATINGS lo 25 A @ T c = 145 °C V* RWM 600 V T, -65 °C to +200 °C -65 °C to +200 °C 1 "s T G 11.5 °C/W Ö jc CHARACTERISTICS t c = 2 5 ° c

Contextual Info: 1N2160 SILICON RECTIFIER DESCRIPTION: The 1N2160 is a Power Rectifier Designed for General Purpose Power Supply Applications. PACKAGE STYLE DO- 5 MAXIMUM RATINGS IO 25 A @ TC = 145 °C VRWM 600 V TJ -65 oC to +200 oC TSTG -65 oC to +200 oC θJC 11.5 oC/W NONE

Contextual Info: 1N2167 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage9.4 @I(Z) (A) (Test Condition)10m Tolerance (%)4 P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped.15 Temp Coef pp/10k100m Maximum Operating Temp (øC)125 Package StyleAxial-A

1N21

Abstract: 1N2154R 1N2160 1N2154 1N2155 1N2156 1N2157 1N2158 1N2159 1N2160R
Contextual Info: Datasheet 1N2154 THRU 1N2160 1N2154R THRU 1N2160R C ra l v Cs InI t K rl M l Sem iconductor Corp. SILICON RECTIFIER 25 AMPS, 50 TO 6 0 0 VOLTS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC DO-5 CASE Manufacturers of World C las s Discrete Semiconductors

21135

Abstract: DO21 ST3010A DO-21 1N3659
Contextual Info: Microsemi Standard Recovery Rectifiers Part Number REC 1N2160 1N1434 1N3659 : 1N1435 1N3660 ST3010 ST3010A 1N1436 i 1N3661 ! ST3020 ST3020A : 1N1437 1N3B63 ST3040 ST3040A 1N1438 ST3060 ! ST3060A ST3080 ST3080A i ST30100 ; ST30100A i 1N1186 1N4525 I R3520PF

1N1436

Abstract: 1N2021 1N1191 1N1192 1N1193 1N1194 1N1196 1N1197 1N1198 1N2154
Contextual Info: . ELITE SEMICONDUCTOR PRODUCTS, INC. 860North Richmond Ave. Lindenburst, New York 11757 PH 631-884-8400 I FX 631-884-8427 www.elitesemi.com STANDARD RECOVERY RECTIFIERS 40 amps - 50 to 1200 volts DO 5 DO203AB Peak Reverse Voltage JEDEC Numbers 1N1191,A

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

A44E

Abstract: n3903 N1183A IN1188 A139 1N1183A-90A 1N3909-13 1N5332 A40F 1N1190 JANTX
Contextual Info: FAST R E C O V E R Y R E C T IF IE R S S E L EC T O R GUIDE 2000 1500 1000 900 600 « 700 !j 6 0 0 § 500 s z 400 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D R E C T IF IE R S SE L EC T O R GUIDE

A41E

Abstract: A40e A139 A40A A41B A40D GE A40B A40F A40B GE A41B
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& JEO EC 50B 1N 1195 A9 8A 1N215460 - GE T Y P E 1 N 1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A 1N38993903 1N390913 1N320814 - - - A40F A44F A 139 S P E C IF IC A T IO N S * F M A V Max. average forward current (1 phase oper­

A139

Abstract: SCR Handbook, General electric IN1188 24kf A40F 1N3909-13 1N5332 sk51
Contextual Info: FAST RECOVERY RECTIFIERS SELECTOR GUIDE 2000 1500 « 1000 900 600 700 !j 600 § 500 s z 400 5 300 §H 200 _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE C U R R EN T -A M PER ES STANDARD RECTIFIERS SELECTOR GUIDE 300 0 V3 2000

1N47A

Contextual Info: jemitronicr discrete devices SEMICONDUCTORS Sem itronics Corp. silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt Nom. Zener Dynamic Zener Temp. Type Voltage, Impedance, Current Coefficient Vz volts Zz (ohms) lz (mA) (% per °C)

Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in power supply and other rectification applications.

IN34A

Abstract: 1N215 1N21 diode 1N207 1N218 1N87 uua 170 1N271 1N200 1N137B
Contextual Info: GENERAL PURPOSE DIODES, C1 CAN minimum Breakdown Voltage ISl Part Number i i i i l i l i Continuous Average Forward Current h |m * ] Maximum Reverse Current 1. tlA T, = 2 5 1C T.= 100 C V* (Volts) 40 20 50 60 0.03 0.01 1N200 1N2Q1 1N202 1N203 1N204 7.5

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

SSIE1340

Abstract: varo VARO VF 12 25PW60 SUES706 DS17-04A 4AF4NLV 4af6 motorola 1n3495 SR25B-6S
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number •o Part Number Manufacturer Max A VRRM IFSM (V) (A) vF Max IF @ (V) IR Test 25 °C @ (A) (A) VR IR Test M @ (A) T2 Test (X) Toper Package Style Max (°C) General-Purpose, lo >= 25 A (Cont'd) 5 10 15 20 25 30

1n2222 general diode

Abstract: 1N2222 1n22 1N2218 1N2219 0880 1N2024 1N2025 1N2027 1N2029
Contextual Info: 3869720 GENERAL D IO D E CO RP GENERAL DIODE CORP 86D ~ flb 00326 DE | D T - o / ' f f OODDBSb 7 | ~ ST U D M O U N T ED SILICON POW ER RECTIFIERS . . . cont'd 1 % 10 @ 150 10 @ 150 1 @ 150 1 @ 150 1 @ 150 5 @150 5 @150 0.5 @ 150 0.5 @ 150 0.5 @ 150 1 @ 150

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

1N3610

Abstract: 1N1118 1N2222 1N1502 1N1120 1N39 1N12068 HA 12058 1N1119 1N1227
Contextual Info: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in

IN5351

Abstract: 1N5389 1N4701A IN3998 IN3999 1N9408 1n2046-2 1n93B 1N2765 1N1736A
Contextual Info: discrete devices iomitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon zener diodes N O T E S : T h e fo llo w in g n o te s e x p la in v a ria tio n s in th e s ta n d a rd ty p e n u m b e rs lis t e d fo r S ilic o n Z e n e r D io d e s . “ N o te ” n u m b e rs

a44e

Abstract: diode ge a40f A45A 1N3909-13 A44M A139 A45E A45M A44B A44A
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& 50B JEO EC 1N 1195 A98A 1N215460 - GE T Y P E 1N1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A - 1N390913 1N320814 - - A 40F A 44F 1N38993903 A139 S P E C IF IC A T IO N S *FM A V Max. average forward current (1 phase oper­

4JA3511

Abstract: 1N2155R in2160 1N2154 1N2154R 1N2155 1N2156 1N2157 1N2158 1N2159
Contextual Info: Silicon I 1N2154-60.R ~l Rectifiers Medium Current T hese stu d m o u n ted diffused ju n c tio n silicon rectifiers a re d e­ signed for all rectifier applications in th e 2 to 30 am pere range. A high ju n c tio n te m p eratu re ra tin g an d an extrem ely low for­