1N206 Search Results

1N2070

Abstract: 1N2069 2069A
Contextual Info: TYPES 1N2069, 1N2Q70. 1N2071, 1N2069A. 1N2070A, 1N2071A SILICON RECTIFIERS B U L L E T IN N O . D L -S 7 2 1 1 6 9 7 , N O V E M B E R 1 9 7 2 200-600 V O LT S • 750 mA A V E R A G E • Rugged Double-Plug Construction • Hermetic Case • Small Size description and mechanical data

IN1190A diode

Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Contextual Info: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series

IN2068

Contextual Info: In te rn a tio n a l IQ R Rectifier Part Number Diodes V*R * V ! fav @ tc (A) (C) % 00 @ ! FM (A) Fax on •fsm 50 Hz 60Hz RQIC(DC! (°C/W) W (A) Case Demand Outline Notes Number Key R19 Standard Recovery 1N2066 800 250 135 1.25 785 4300 4500 0.18 5 12 17

Contextual Info: 1N1206A/RA asi SILICON RECTIFIER DESCRIPTION: The 1N1206A/RA is a Medium Current Rectifiers Designed for General Purpose Power Supply Applications. • 1N206A = Anode to Stud • 1N206RA = Cathode to Stud MAXIMUM RATINGS 12 A @ T C = 150 °C lo V 600 V rwM

1N2071

Abstract: 1N2070 1N2069 1N2069A international rectifier silicon rectifier
Contextual Info: INTERNATIONAL RECTIFiER S5 '48 5 5 4 5 2 I N T E R N A T I O N A L D E | 4Ö554S2 55C RECTIFIER 0Ö04T00 04900 Data Sheet No. PD-2.003C INTERNATIONAL RECTIFIER IOR 1NS069, A SERIES 750 mA Silicon Rectifier Diodes Major Ratings and Characteristics 1N2069A Units

21PT60

Abstract: 10D05 1N4821 21pt40 1N4818 1N5053 1N4820 1N2070 1N4822 21PT20
Contextual Info: Rectifiers International H ]Rectifier Standard Recovery 750 mA-50 Amps Part Number Vr r m V (A) <°C) SO Hz (A) (1) VFM @ 60 Hz (A) * * 'F(AV) (V) RffiJC DC (°C/W) 1N2069 1N2070 1N2071 200 400 600 0.75 25 21 22 1.2 0.25 1N2069A 1N2070A 1N2071A 200 400

Microsemi s50410

Abstract: 5500
Contextual Info: Microsemi Standard Recovery Rectifiers Part Number 1N2054 1N2055 1N2056 1N2057 1N20S8 1N2059 1N2060 1N2061 1N2062 1N20S3 ! 1N2064 1N2065 1N2066 1N2067 1N2068 1N4044 1N4045 1N4046 1N4047 1N4048 1N4049 1N4050 1N4051 1N4052 1N4053 1N4054 1N40S5 1N40S6 R50410

1N1206A

Abstract: 1N206A
Contextual Info: 1N1206A/RA a s ii SILICON RECTIFIER DESCRIPTION: The 1N1206A/RA is a Medium Current Rectifiers Designed for General Purpose Power Supply Applications. • 1N206A = Anode to Stud • 1N206RA = Cathode to Stud PACKAGE STYLE DO- 4 MAXIMUM RATINGS Io 12 A @Te = 15o 0C

SCR gate drive circuit

Abstract: an 80771 IN1190 IN1190A IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03
Contextual Info: Revised 8/27/98 www.irf.com Rectifiers / Thyristors Catalog of Availble Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series

Contextual Info: DIGITRON SEMICONDUCTORS 1N2054-1N2068 HIGH POWER RECTIFIER MAXIMUM RATINGS 1N Part number Unit 2054 2055 2056 2057 2058 2059 2060 2061 2062 2063 2064 2065 2066 2067 2068 50 100 150 200 250 300 350 400 450 500 600 700 800 900 1000 Peak inverse voltage ELECTRICAL CHARACTERISTICS

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

1n2070

Abstract: 1N206 1N2069
Contextual Info: I N T E R NA T IO NAL RECTIFiER 4855452 S5 D E | 4 Ö5 5 4 S 2 0 D0 4 T 00 55C 0 4 9 0 0 INTERNATIONAL RECTIFIER T ~ c i~ i Data Sheet No. PD-2.003C I N T E R N A T I O N A L R E C T I F I E R IÖ R 1NS069, A SERIES 750 mA Silicon Rectifier Diodes Major Ratings and Characteristics

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

D0205AB

Abstract: 1N4051 R10B 150KS20 D0-205AC 150KS10 150KS100 150KS120 150KS30 1n2054
Contextual Info: INTERNATIONAL RECTIFIER SbE D • 4055452 QQ1D15Ô b ■ "T-ö| international Rectifiers Rectifier . Standard Recovery 150-275 Amps Part Number ■F AV @ Tc VRRM (V) (A) <°C) >FSI*( 1 ) 50 Hz (A) VfM 60 Hz » * lF(AV) (A) 00 RthJQDC (°C/W) 150KS5 150KS10

1N1662

Abstract: 1N2056 1N1660 1N1661 1N1670 1N1671 1N2054 1N3260 1N4044 1N4045
Contextual Info: Silicon Power Rectifier 1N4044—1N4056 Dim Inches M illim eter Minimum Maximum Minimum Maximum N otes A B C D F G H J K M R S 1.218 1.350 5 .30 0 .793 .300 -.660 .338 .665 -.050 3 /4 -1 6 1.250 1.375 5 .90 0 .8 28 .3 25 .9 00 .749 .3 48 .755 1.100

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

IN3738

Abstract: IN2064 1n2054
Contextual Info: Diodes international IQ R Rectifier . VM M Part Number V *F A V @ t C fm (A) (V) (C) @ lfM Fax on Case Demand Outline Number Key 1FSM 50 H? 60H: R QIC(DC) (A) (A) (A) (“C/W) Notes Standard Recovery DO-205AB (DO-9) 50 100 100 200 200 300 300 400 400 500

1N31

Abstract: 150K80A
Contextual Info: In t e r n a t i o n a l R e c t if ie r n Diodes Fax-on- >FSM 2 Part Number Vrrm (V) |RAV) TC <"Q (A) 50 Hz tO Hi VFMOIfm (V) (*) RthJC rc/w) Notes 1.50 1.50 1.50 1.50 1.50 1.50 1.50 1.50 1.33 1.33 1.33 1.33 1.33 1.33 1.33 1.33 1.33 1.33 1.33 1.33 1.33