1H52 Search Results

Contextual Info: DG458/883, DG459/883 C£| H a r r is S E M I C O N D U C T O R W 7 Single 8-Channel/Differential 4-Channel Fault Protected Analog Multiplexers PRELIMINARY June 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of

dg305aaa

Abstract: 5962-8948102va H1509
Contextual Info: MUX & SWITCH D ata S h eets • ANALOG □ E 8 I Q N G U ID E A p p licatio n s N otes • Free Sam ples IpA M uxes & Sw itches R educe Errors from High-Impedance Sources Add 110V AC Fault Protection w ith External 40kil Resistors For data-acquisition systems th a t require u p to

1N9245

Abstract: 1N9242 1N9280 1N9241 1N9239 1N9247 IN750 1N9232 1NS226 IN757
Contextual Info: INTERNATIONAL SEHICOND 4TE D T00037Ô ZENER DIODES JEOEC TYPE NO. T-!M MAXIMUM REVERSE CURRENT @ V. = 1 VOLT NOMINAL ZENER VOLTAGE Vt @ l „ ZENER TEST CURRENT In MAXIMUM ZENER IMPEDANCE l v @ Iji @25°C @*150°C V0LÎS mA OHMS -A TYPICAL TEMP COEFF.OF ZENER

EIGHT n-channel MOSFET ARRAY

Contextual Info: DG4S8, DG459 ill HARRIS V i W S E M I C O N D U C T O R PRELIMINARY Single 8-Channel/Differential 4-Channel Fault Protected Analog Multiplexers December 1993 Features Description • Fault and Overvoltage Protection The DG458 Single 8-Channel and DG459 Differential

IN4773

Abstract: IN2976 IN4773A IN536 1N29B IN4772 1H28 IN2822 IN2621 1N137
Contextual Info: TEX/ SEflIT R O N IC S CORP^ 27E I> • MAbTEm, 0DD0314 4 ■ semitron hot iine -r-n - 01 - T ' H - II TOLL FREE NUMBER 800-777-3960 discrete devices silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt m T 1N42# 1N1735 Norn.

Contextual Info: Micrtkemi Corp. .s i v i .1 i v .i, < -i s c o t t s d a i .e , a /. 1N 5221 thru 1N 5281 DO-7 f o r m o r e in fo r m a tio n c;*1l <W 2> 941-6.100 FEA TU RES S|L|CQ N • 2.4 THRU 200 V O ltS $Q Q m W * COMPACT PACKAGE Z E N E R D IO D E S M A X IM U M R A T I N G S

HHFG

Abstract: PD64082 UPD64082GF uPD64081B 526h 527h s1444 aircraft cadc MIO15 UPD64082GF-3BA
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD64082 THREE-DIMENSIONAL Y/C SEPARATION LSI DESCRIPTION The µPD64082 realizes a high precision Y/C separation and a noise reduction by the three-dimension signal processing for NTSC signal. The three-dimension Y/C separation system can be easily realized with 4Mbit-EDO DRAM and A/D converter.

1N5315

Abstract: LT 5203 1n5203 03J5 1H52
Contextual Info: . Phone: 631-981-6140 Fax : (631-585-4858) Current Regulator Field Effect Diodes 1N 5203 thru JfiS 314 G EO M ETRY «65 • C u r r e n t C o n s la r it O v e r W id # V o t t a g t R a n g e 00-rJ’ Kfcva* * H ig h S a u r e * Im p e d a n c e * C o n n e c t in P a ra lle l fo r H ig h e r C u r r e n t

IN2621

Abstract: IN4773 1N2621A Zener C212 IN4772 IN4773A IN537 1n764a 1N29B 1N2169A
Contextual Info: TEX/ SEflIT R O N IC S CORP^ 27E I> • MAbTEm, 0DD0314 4 ■ semitron hot iine -r-n - 01 - T ' H - II TOLL FREE NUMBER 800-777-3960 discrete devices silicon voltage reference diodes 500 milliwatt temperature compensated 200 milliwatt m T 1N42# 1N1735 Norn.