IN118 Search Results

IN1184A

Abstract: IN1190 IN1185A IN1183A IN1184 C220D IN1188 C220B IN3659 C220E
Contextual Info: "as dF|dE5A3S4 00DD03b 1 g e n e r a l p u r p o s e r e c t if ie r s 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 3 6 10 AVERAGE RECTIFIED FORWARD CURRENT AMPERES C 30 35 IN3659 IN1183 IN1184 IN1185 IN1186 IN1183A IN1186A IN3289 IN3289A IN3263 IN1187

IN1184A

Abstract: IN1184 IN1190 IN1186A in3768 A72D IN1190A IN1187 in1188a IN1188
Contextual Info: RICHARDSON/ N A T I O N A L EL bZE D • 7 7 3 4 1 1 7 □□□070fl 54S ■ NAT SILICON DIODES JEDEC TYPE NATIO N AL TYPE NO. IN2155-60 IN1184-90 IN3765-68 IN5332 IN4529-30 IN1184A-90A A77 A72 25 75 25 145 35 140 35 500 40 115 70 100 70 120 A139 AV Max. average forward

N117

Abstract: 1N126A 1n117 1N1171 1N118 1N118A Germanium Power Diodes "Germanium Diode" Germanium power
Contextual Info: 92D 00409 ¡353303 C E N T R A L O E M I C O N D U C T O R T-Of ~t>l D 1 N 1 17 1N118 1N118A INI c 26 1 NI 26 a GERMANIUM DIODE JEDEC DO-7 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 1N117, IN118, 1N1I8A, 1N126, 1N126A types are gold bonded germanium diodes mounted in a hermetically sealed .glass case, designed for general purpose applications.

IN1183

Abstract: IOR 5250 IN1190 1N1183 1N1183A 1N2128A 1N3765 PD-2087 N1190 1N1133
Contextual Info: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 A m p P o w e r Silicon R e c tifie r D iodes Description and Features Major Ratings and Characteristics ' f îA V i 1N 1183 1N3765 1N 1183A 35*

OCX1601

Abstract: in107 OCX160 OCX256 IN118 rca 645 iN92 tms 1601
Contextual Info: OCX Register Programming Manual Revision 2.1 February 2003 Revision History Revision 1.0, March 2001—Preliminary Release. Revision 2.0, May 2002—Fairchild Semiconductor Preliminary Release. Revision 2.1, February 2003—Corrected references to OCX160.

1N1184 JAN

Abstract: 1N1184 1N119 1n2130
Contextual Info: SEN I CO N COnPONENTS INC 2flE D • 8 1 3 5 15 7 0000fl3b □ STUD BASE RECTIFIERS DO-5 CASE lQ RATINGS TO 60.0 AMPS t rr TYPE NUMBER PRV VOLTS VF TEIIR CURRENT AMPERES V TEMP AMPS ?c *R jtA TEMP oC VsM nS RATIO AMPS 1N2488 1N249B 1N250B 1N11B3 1N1183A

1N2222A

Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
Contextual Info: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244

N38 transistor

Abstract: w38 transistor AR33 crosspoint 256 x 256 ocx 256 E23 transistor AB-39
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports

Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

Scan AV6

Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

IN126P

Abstract: AA-38 AH36 AR24
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

LT3973-3.3

Abstract: L1117T-3.3 LT3971-3.3
Contextual Info: jomitronicr discrete devices SEMICONDUCTORS Semitronics Corp. silicon rectifiers cont'd stud mounted silicon power rectifiers DO-4 case style — cont’d T »« Maximum Maximum Average Forward Peak Reverse Current (Amps) Voltage @ Case Temp. (°C) (volts)

TIC2260

Abstract: C10601 SC141D IN5829 IN3492 in540i IN1190 IN3493 IN1183A IN1184
Contextual Info: G EN ERA L PURPOSE R ECTIFO SS 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82 ÍE1 02553511 n""""35 11 I 820 00035 o r~ Of-o / lo AVERAGE RECTIFIED FORWARD CURRENT AMPERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200 IFSM VFM Ca s é 3 3 5 6 MR500

IN96

Contextual Info: 128-Channel Digital X-Ray Analog Front End AD8488 Data Sheet FEATURES GENERAL DESCRIPTION 128 integrator channels Correlated double sample error correction CDS Corrects for VOS and LF noise Power consumption per channel Normal: 11 mW Low power: 4 mW Low input leakage current: −1.5 pA typical

IN117

Abstract: in60p OCX256 IN104 TBGA792 crosspoint 256 x 256 IN126P
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable LVDS I/O OCX256L and LVPECL I/O (OCX256P) versions

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

IN126P

Abstract: IN125P IN117P IN118P IN68P diode ak38 IN121P diode ae38 AF39 OCX256
Contextual Info: Preliminary Revised March 2003 OCX256L • OCX256P Crosspoint Switch with LVDS Preliminary • Crosspoint Switch with LVPECL (Preliminary) • 256 configurable I/O ports General Description The OCX256 SRAM-based devices are non-blocking 128 X 128 digital crosspoint switches and are available in LVDS

in78

Abstract: IN118 IN116 IN109 IN117 in76 IN103 MS-034 AAF-1 in107 IN104
Contextual Info: 128-Channel Digital X-Ray Analog Front End AD8488 Data Sheet FEATURES GENERAL DESCRIPTION 128 integrator channels Correlated double sample error correction CDS Corrects for VOS and LF noise Power consumption per channel Normal: 11 mW Low power: 4 mW Low input leakage current: −1.5 pA typical

TIC2260

Abstract: t25000 IN1190 IN5829 IN3492 IN1184A sc1430 jb33 IN2158 in5834
Contextual Info: G E K E R A LP U R P O S E R EC TïFISR S 0258354 A D VA N CED S E M IC O N D U C T O R 82 tEl Q25a3Sl<0000035 ° I 82D 00035 o r - o / - o f lo AV ER A G E R ECTIFIED FORW ARD C U R R EN T AM PERES VRRM 50 100 150 200 300 400 500 600 700 800 900 1000 1200

1N1120

Abstract: 1N2484 1N342 1N2226
Contextual Info: - x _ S B . _ _ _ c m i c r o 2 7 E » MäbTEMb • M äb T EM b IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T »» 1N3241 1N3242 1N3243 1N3244 1N3245 600 800 ■ 1000 1200 1500

IN2222A

Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll

T35W

Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,

n37 transistor

Abstract: AH34 transistor crosspoint 256 x 256 ocx 256 w34 transistor AF39 IN125P U39-W39 AB-39 IN80P IN70N
Contextual Info: OCX256 Crosspoint Switch Advanced Data Sheet Features • • • • 667 Mb/s port data bandwidth, >85Gb/s aggregate bandwidth Low power CMOS, 2.5V and 3.3V power supply SRAM-based, in-system programmable 256 configurable I/O ports – 128 dedicated differential input ports