1N3765 Search Results

IN1183

Abstract: IOR 5250 IN1190 1N1183 1N1183A 1N2128A 1N3765 PD-2087 N1190 1N1133
Contextual Info: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 A m p P o w e r Silicon R e c tifie r D iodes Description and Features Major Ratings and Characteristics ' f îA V i 1N 1183 1N3765 1N 1183A 35*

Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military,

A41E

Abstract: A40e A139 A40A A41B A40D GE A40B A40F A40B GE A41B
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& JEO EC 50B 1N 1195 A9 8A 1N215460 - GE T Y P E 1 N 1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A 1N38993903 1N390913 1N320814 - - - A40F A44F A 139 S P E C IF IC A T IO N S * F M A V Max. average forward current (1 phase oper­

Contextual Info: 1N3765 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current35 V(RRM)(V) Rep.Pk.Rev. Voltage700 t(rr) Max.(s) Rev.Rec. Time5.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

1N1183

Abstract: 1N1183A 1N1184 1N1184A 1N1185 1N1185A 1N1190 1N3765 1N3768 1 J 250
Contextual Info: Silicon Power Rectifier 1N1183—1N1190, 1N3765—1N3768 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity; Stud is Cathode Reverse Polarity. Stud is Anode A B C D E F G H J K M N

1N1183

Abstract: 1N1183A 1N1184A 1N1185A 1N1186A 1N2128A 1N3765 DO-203AB 1N1186RA
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series RoHS • Good surge current capability up to 1000 A COMPLIANT • Can be supplied to meet stringent military, aerospace and

1N1184

Abstract: 1N1183 1N1183A 1N1185 1N1186 1N2128A 1N3765 DO-203AB
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and

1n1183

Abstract: 1n1183a 1n1186ar 1N1186 VISHAY
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and

1N1183

Abstract: 1n1184
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and

1N119

Abstract: 1N37 1N213 25MAY 1n1183 1n212
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and

1N3768

Abstract: 1N3765 1N3766 1N3767 1N3768R
Contextual Info: 1N3765 thru 1N3768R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 R 1N3766 (R) 1N3767 (R) 1N3768 (R)

Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military,

a44e

Abstract: diode ge a40f A45A 1N3909-13 A44M A139 A45E A45M A44B A44A
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& 50B JEO EC 1N 1195 A98A 1N215460 - GE T Y P E 1N1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A - 1N390913 1N320814 - - A 40F A 44F 1N38993903 A139 S P E C IF IC A T IO N S *FM A V Max. average forward current (1 phase oper­

1N1183

Abstract: 1N1186RA 1N1184 1N1183A 1N1184A 1N2128A 1N3765 IN118 TQ140 INI183
Contextual Info: SS DE I 4fl55452 4855452 00Em40 T |~~ 5 5C INTER N A T I O N A L R E C T I F I E R D 04940 Data Sheet No. PD-2.087 r - t f / - IN TER N A TIO N A L R E C T IF IE R T 'I IÖR 1N1183, 1N3765, 1M11S3A, 1NS1S8A SERIES 35, 4 0 and 6 0 Amp Power Silicon Rectifier Diodes

1N1190

Abstract: 1N3768
Contextual Info: Silicon Power Rectifier 1N1183— 1N1190, 1N3765-1N3768 Millim eter Dim . Inches Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity. Stud is Cathode Reverse Polarity: Stud is Anode A B C D E F G H J K M

IN3879

Abstract: 1N3879 1N3880 1N3881 1N3882 1N3883 1N3880R
Contextual Info: I 1N3765-68 SEE PAGE 209 Silicon IN3879-83.R I RECTIFIERS FAST RECOVERY Features: • Fast Recovery Time . . . 200 Nanoseconds Maximum • Diffused Construction • For Use i n : — Inverters — Choppers — Low RF Interference Applications — Free-W heeling Rectifier Applications

1N1184

Abstract: 1N1189 1N1183 1N1183A 1N1184A 1N1185A 1N2128A 1N3765 DO-203AB
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and

1N93A

Abstract: 2N78A MIL-S-19500 1N1184 1N249B 1N3713 1N4532 1N4148 JANTX 1N4148 JAN 2n526
Contextual Info: SILICON RECTIFIERS MEDIUM CURRENT 20 TO 40 AMPERES JEDEC 1N2488 50B 1N1195A-98A 1N2154-6Q 1N1183-90 1N3765-68 1N5332 1N1183A40A 1N3899-3903 1N3909-13 1N4529-30 GE TYPE 1N3208-14 A40F-M A44F-M ELEC TR IC A L SPECIFICATIO NS I fm av Max. average forward cur­

IOR 5250

Abstract: 1N1183A IN1183 1N212BA IOR 136 1N1183 1N2128A 1N3765 1N11B3 N1190
Contextual Info: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 Amp Power Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics ' f îAVi 1N1183 1N3765 1N1183A 35* 35* 40* 1N2128A Units

Contextual Info: VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, Stud Version , 35 A, 40 A, 60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military,

1N3768

Contextual Info: 1N3765 thru 1N3768R Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 35 A Features • High Surge Capability • Types up to 1000 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

1N1183-1N1190

Abstract: 1N3768
Contextual Info: DIGITRON SEMICONDUCTORS 1N1183-1N1190, 1N3765-1N3768 STANDARD RECOVERY RECTIFIER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Characteristics Symbol Conditions Average forward current IF AV 40 Amps TC = 146°C, half sine wave, RθJC = 1.25°C/W Maximum surge current

1N1184A

Abstract: 1N1189 1N1184 1N1183 1N1183A 1N1185 1N1185A 1N1186 1N1190 1N3765-1N3768
Contextual Info: Silicon Power Rectifier 1N1183—1N1190, 1N3765-1N3768 Dim 1 1 1 M illim eter Minimum Maximum Minimum Maximum Notes 1 □ 1 Inches Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity: Stud is Cathode Reverse Polarity: Stud is Anode A B C D E

1N3768

Contextual Info: 1N3765 thru 1N3768R Silicon Standard Recovery Diode VRRM = 700 V - 1000 V IF = 35 A Features • High Surge Capability • Types from 700 V to 1000 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.