1N37 Search Results

1N3735

Abstract: 1N3736 1N3738 1N3739 1N3740 1N3741 1N3742 1N3743 1N3744 1N37
Contextual Info: E DAL INDUSTRIES I NC 45E D 30137113 DDDD3D1 m • E DL <r I - J PIV I:n SEE % E L O W k3 0 - 2M A _ AMPS 4500 v\ i 1.1 M A X . 250A @ 25 SEE CHART PIV @ 130 @ STYLE D O 9 STAMP 1N37_ EQUIV. TO P/N 1N3735 1N3736 1N37-37 1N3738 1N3739 1N3740 1N3741

IN1183

Abstract: IOR 5250 IN1190 1N1183 1N1183A 1N2128A 1N3765 PD-2087 N1190 1N1133
Contextual Info: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 A m p P o w e r Silicon R e c tifie r D iodes Description and Features Major Ratings and Characteristics ' f îA V i 1N 1183 1N3765 1N 1183A 35*

Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military,

GE SCR Manual

Abstract: "scr manual" scr manual GE A390C Rectifier Diode general electric a390e A390 ge a390t Dow corning 744 1N4053 GE SCR 1000
Contextual Info: RECTIFIERS io<u - 250 TO 740 AMPERES JE D E C GE T Y P E S PEC IFICATIO N S Max. average forward current 1 phase ' f m ( a v operation) (A) @ Tc = (°C) - 1N3735-44 - 1N4044-56 - - - A190 - A197 - A 390 A397 A 500 250 250 250 275 400 400 740 144 130 110

A41E

Abstract: A40e A139 A40A A41B A40D GE A40B A40F A40B GE A41B
Contextual Info: RECTIFIERS 20 TO 25 AMPERES 1N 248& JEO EC 50B 1N 1195 A9 8A 1N215460 - GE T Y P E 1 N 1183-90 1N3765-68 1N5332 1N452930 - 1N1183A90A 1N38993903 1N390913 1N320814 - - - A40F A44F A 139 S P E C IF IC A T IO N S * F M A V Max. average forward current (1 phase oper­

1N1190

Abstract: PBY306 1N3768 1N1183 1N1183R 1N1184 1N3766 PBY301 PBY302 SW11
Contextual Info: 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2005-01-31 Nominal Current Nennstrom 7 Repetitive peak reverse voltage Periodische Spitzensperrspannung

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

Contextual Info: 1N3739R Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current250 @Temp (øC) (Test Condition)130# V(RRM)(V) Rep.Pk.Rev. Voltage500 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.5k V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)250 @Temp. (øC) (Test Condition)130#

Contextual Info: 1N3766+JANTX Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current35 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)110

Contextual Info: 1N3708 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage160 @I(Z) (A) (Test Condition)750u Tolerance (%)20 P(D) Max. (W)750m¥ Z(z) Max. (ê) Dyn. Imped.1.7k Temp Coef pp/10k Maximum Operating Temp (øC)175þ

Contextual Info: 1N3768R+JANTXV Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current35 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time10u @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)35

Contextual Info: 1N3765 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current35 V(RRM)(V) Rep.Pk.Rev. Voltage700 t(rr) Max.(s) Rev.Rec. Time5.0u @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

Contextual Info: 1N3768R+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current35 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time10u @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.8 @I(FM) (A) (Test Condition)35

Contextual Info: 1N3735R Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current250 @Temp (øC) (Test Condition)130# V(RRM)(V) Rep.Pk.Rev. Voltage100 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.5k V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)250 @Temp. (øC) (Test Condition)130#

Contextual Info: 1N3737R Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current250 @Temp (øC) (Test Condition)130# V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.4.5k V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)250 @Temp. (øC) (Test Condition)130#

Contextual Info: 1N3717 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 4.7m Peak Curr. Tol.12m Total Cap. (F)25p Ip/Iv Min7.6 Vp65m Vv355m Fwd Volt @Ipeak510m Resist. Cutoff Freq3.4G Series Induct. (H).50n R(series) (Ohms).52 Neg Resist.24 Semiconductor MaterialGermanium

DO-203AB Package

Abstract: 1N1190 1N1184 1N1186 1N1190 JANTXV 1N3768
Contextual Info: 1N1184, 1N1186, 1N1188, 1N1190, 1N3766 and 1N3768 R Available on commercial versions High Reliability Silicon Power Rectifier Qualified per MIL-PRF-19500/297 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high

1N1183

Abstract: 1N1183A 1N1184 1N1184A 1N1185 1N1185A 1N1190 1N3765 1N3768 1 J 250
Contextual Info: Silicon Power Rectifier 1N1183—1N1190, 1N3765—1N3768 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes Notes: 1. Full threads within 2 1 /2 threads 2. Standard Polarity; Stud is Cathode Reverse Polarity. Stud is Anode A B C D E F G H J K M N

1N3779

Abstract: 1N3780 1N3781 1N3782 1N3783 1N3784 1N4565 1N4565A 1N4566 1N4566A
Contextual Info: AMERICAN POWER DEVICES 53E D 0737135 DD000S5 T TCZENER DIODES -r -ii-o 'j T-U-ll T 400 mW & 500 mW, TC DO-7 Case Type Zener Voltage Min. Max. V7 v7 V V DO-7 Case Test Current Maxlmumi Dynamic Impedance Temperature Range mA !z t Z Z T @ IZ T n °C % /°C 1N3779

TUNNEL DIODE

Abstract: 1N3714 germanium TUNNEL DIODE tunnel diode specifications
Contextual Info: 1N3714 General Purpose Tunnel Diode 62.39 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3714 Online Store 1N3714 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits

1N1183

Abstract: 1N1183A 1N1184A 1N1185A 1N1186A 1N2128A 1N3765 DO-203AB 1N1186RA
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series RoHS • Good surge current capability up to 1000 A COMPLIANT • Can be supplied to meet stringent military, aerospace and

1N1184

Abstract: 1N1183 1N1183A 1N1185 1N1186 1N2128A 1N3765 DO-203AB
Contextual Info: 1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and

1n4571

Contextual Info: 400 mW & 500 mW, Glass, TC r JEOEC TYPE NUMBER ZENER VOLTAGE Vz VOLTS Min. Max. 1N3779 1N3780 1N3781 6.3 6.3 6.3 1N3782 1N3783 1N3784 6.3 6.3 6.3 - - - - - - TEST CURRENT Case d o -7 EFFECTIVE TEMPERATURE COEFFICIENT TEMPERATURE RANGE mA MAXIMUM ZENER IMPEDANCE

1N3766-1N3768

Abstract: 1N1184 1N1184R 1N1186R 1N1188 1N1188R 1N1190 1N1190R INI186
Contextual Info: Military Silicon Power Rectifier 1N1184-1N1190, 1N3766— 1N3768 Dim. In ch e s Millim eter M inim um M a xim u m M inim um M axim u m N o te s Notes: 1. 1 / 4 - 2 8 U N F - 3 A 2. Full t h re a d s within 2 1 / 2 th re a d s 3* For R e v e rse P o larity add F