1N60 Search Results

J607

Abstract: 1N6036 1N6072A SMCG6036 SMCG6072A SMCJ6036 SMCJ6072A MIL-PRF-19500 SMCG Microsemi
Contextual Info: SMCG6036 thru SMCG6072A, e3 and SMCJ6036 thru SMCJ6072A, e3 Bidirectional Transient Voltage Suppressor SCOTTSDALE DIVISION APPEARANCE These surface mount Transient Voltage Suppressors TVSs are electrically equivalent to the 1N6036 thru 1N6072A JEDEC registered axial-leaded devices. They are are used for

1N6073

Abstract: 1N6073US 1N6074 1N6075 1N6081 1N6081US 1N6081 JANTX
Contextual Info: 1N6073 thru 1N6081 VOIDLESS HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS POWER RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/503 and is ideal for high-reliability applications where a failure cannot be

IN6052A

Abstract: 1N6062A in6064a 1N6072A 1N6041A 1N6053A in60 1N6054A 1N6045A 1N6039A
Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients

Contextual Info: DIGITRON SEMICONDUCTORS 1N6073-1N6081 • • • • ULTRA FAST RECTIFIERS Metallurgically bonded Ultra fast recovery Available Non-RoHS standard or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

1N6095

Abstract: 1N6096 DO-203AA
Contextual Info: 25 Amp Schottky Rectifier 1N6095—1N6096 Dim Inches M illim eter Minimum Maximum Minimum Maximum Notes Notes: 1. 1 0 - 3 2 UNF3A threads 2. Full threads within 2 1 /2 threads. 3. Stud is Cathode. A B C D E F G H J M N P 1,3 .423 -.600 .422 .075 -.163

1N5985B

Abstract: 1N5988B 1N6006B 1N5994B 1N5995B 1N5993B 1N6020B 1N5996B
Contextual Info: Zeners 1N5985B - 1N6025B Zeners 1N5985B - 1N6025B Absolute Maximum Ratings * Tolerance = 5% TA = 25°C unless otherwise noted Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” TJ, TSTG Operating and Storage Temperature Range Derate above 75°C

marking code XYl 15

Abstract: 1N5985B 1N5986B 1N5988B 1N5990B 1N6020B 1N5993B marking code 601 1N5996B 1N5989B
Contextual Info: Zeners 1N5985B - 1N6025B Zeners 1N5985B - 1N6025B Absolute Maximum Ratings * Tolerance = 5% TA = 25°C unless otherwise noted Symbol PD Parameter Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8” TJ, TSTG Operating and Storage Temperature Range Derate above 75°C

Contextual Info: MCC 1N5988 THRU 1N6016
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • 500 mW Zener Diode 3.3 to 47 Volts Popular DO-35 Package-Small and Rugged Double Slug Construction

zener 1.2 v

Abstract: 1N6008B datasheet List of Zener diode 1N6008B
Contextual Info: 1N6008B SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Ptot 500 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS -55 to +175 O Power Dissipation 1) C C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case

1N60 diode

Abstract: germanium point contact diode point contact diode 1N60 diode date sheet 1N60P diode 1n60 germanium diodes "Point Contact Diode" germanium diode germanium diode equivalent
Contextual Info: 1N60P, 1N60S POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc. Absolute Maximum Ratings Ta = 25oC

1N34A reverse recovery

Contextual Info: SEMICONDUCTOR TECHNOLOGY^ OSE I | fll3b4Sfl G D D D a S D S r^/"ôr - DIODES STI Type Material Maximum Peak Reverse Voltage volts) Maximum Forward Voltage (volts) Forward Current (mA) Reverse Current (ua) 25 “C 1N34A 1N60A 1N128A 1N198A 1N251 Ge Ge

1N6091

Abstract: lva362A 1N6082 LVA3100A LVA343A LVA347A LVA351A LVA356A LVA368A LVA375A
Contextual Info: LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE 1N6082 - 1N6091 LVA343A - LVA3100A • Designed for use at low current levels. • Features sharp knees, low leakage, low impedance, and low noise. • Available in the DO-7 glass package and in die form.

jan1n12

Abstract: 1n1118r 1N1120R JANTX1N1202A 1N1124 N1206 1N1120
Contextual Info: rectifiers 24 JEDEC 10 Part Number A 1N607, R 1N607A, RA 1N608, R 1N608A, RA 1N609, RA 1N609A, RA 1N612, R 1N612A, RA 1N613, R 1N613A, RA 1N614, R 1N614A, RA 1N115, R 1N1118, R 1N1119, R 1N1120, R 1N1124, R 1N1124A, RA JAN1N1124A/104 1N1125, R 1N1125A, RA

Contextual Info: 1N6036 - 1N6072A series 1N6036 - 1N6072A IN60 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) FEATURES • Stand-off voltage range 6.8 - 200 Volts • Glass Passivated Junction 31.8Min

1N60P

Abstract: marking code ma
Contextual Info: 1N60PWS Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION • High reliability 1 Cathode • Low forward voltage and reverse current 2 Anode 1 2 MA APPLICATIONS • For electronic calculator, etc. • Low current rectification and high speed switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

1N5988B

Abstract: 1N6006B 1N5994B 1N5995B 1N5993B
Contextual Info: 1N5985B~1N6016B Zener diode Features 1. High reliability 2. Very sharp reverse characteristic 3. Zener voltage 2.4V to 47V 4. VZ-tolerance±5% Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value

Contextual Info: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter

1N60P

Contextual Info: 1N60PWS SCHOTTKY BARRIER DIODE Features • High reliability • Low forward voltage and reverse current PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Applications • For electronic calculator, etc. • Low current rectification and high speed switching MA

LL60P

Abstract: 1N60P 20PF
Contextual Info: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage

IN6052A

Abstract: 1N6036 IN6055A in6064a 1N6058 1N6060 1N6061 1N6067A 1N6068 1N6068A
Contextual Info: 1N6036 thru Microsemi Corp. 1N6072A TRANSIENT Features • 1500 watts peak power dissipation • Available in standoff voltages from 5.5V to 185V • DO-13 hermetically sealed package • Bidirectional • UL recognized 1N6070A] ABSOREITION ZENER Description

1n60

Abstract: 1N60P 1N60 Schottky
Contextual Info: MCC 1N60 1N60P
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High Reliability Low Reverse Current and Low Forward Voltage Schottky Barrier Rectifier Maximum Ratings • DO-35

1N6072A

Abstract: 1N6066A
Contextual Info: 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES DO-13 The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients can permanently damage sensitive components. Because o f their high surge capability

1N6094

Abstract: 1N6092 1N6092 JANTX
Contextual Info: 1N5765 1N6092 1N6093 1N6094 ma JAN QUALIFIED HERMETIC LED INDICATORS OPTOELECTRONIC PRODUCTS DIVISION AVAILABLE THROUGH DISTRIBUTION DESCRIPTION: These indicators are hermetically sealed in T O -46 packages. A tinted diffused dome lens provides good on-off contrast