1N60S Search Results

1N60 diode

Abstract: germanium point contact diode point contact diode 1N60 diode date sheet 1N60P diode 1n60 germanium diodes "Point Contact Diode" germanium diode germanium diode equivalent
Contextual Info: 1N60P, 1N60S POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc. Absolute Maximum Ratings Ta = 25oC

1N60P

Abstract: ST60P 1N60S 20PF
Contextual Info: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to Max. 0.5 1.9 max 3.9 max 1N60P and 1N60S Black Cathode Band Black Part No. Black "ST" Brand 4.5± 1.0 R5 max Min. 27.5 Max. 1.9 10.0± 1.0 XXX Max. 3.9 ST 1.0 max Min. 27.5 Glass case DO-35-1

1N60P

Abstract: diode sod-123 marking code FN
Contextual Info: 1N60PW, 1N60SW Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION 1 Cathode 2 Anode • High reliability • Low forward voltage and reverse current 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol APPLICATIONS

1N60P

Abstract: 20PF
Contextual Info: 1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 60 V Reverse Voltage dc VR 20 V Peak Forward Current

ST60P

Abstract: 20pf 1N60P 1N60S
Contextual Info: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE 1.9 max 3.9 max Characteristics equivalent to or better than 1N60P and 1N60S ideal for used in detection or for switching on the 4.5± 1.0 R5 max radio, TV, etc. 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm

1N60P

Abstract: 20PF
Contextual Info: 1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 60 V Reverse Voltage dc VR 20 V Peak Forward Current

ST60P

Abstract: 20pf 1N60P 1N60S
Contextual Info: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE 1.9 max 3.9 max Characteristics equivalent to or better than 1N60P and 1N60S ideal for used in detection or for switching on the 4.5± 1.0 R5 max radio, TV, etc. 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm

1N60P

Abstract: diode sod-123 marking code 26
Contextual Info: 1N60PW, 1N60SW Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION 1 Cathode 2 Anode • High reliability • Low forward voltage and reverse current 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol APPLICATIONS

bzv40

Abstract: bzd10 BZX98 bzw22 BZW22/C3V3 BZX97 201 Zener diode C200 1N6073 1N6074
Contextual Info: Type No. PIW to 25°C VF IR Volts Amps Volts kA t RR 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6079 50 10 0 150 50 100 150 50 3 .0 3 .0 3 .0 6 .0 6 .0 6 .0 1 2 .0 2 .0 4 2 .0 4 2 .0 4 1 .7 6 1 .7 6 1 .7 6 1 .5 0 1.0 1.0 1.0 5 .0 5 .0 5 .0 1 0 .0 1N6080 1N60S1

Semtech 1n60

Abstract: point contact diode "Point Contact Diode" germanium diode 1N60 1N60 diode 1N60P diode 1n60 germanium diode junction capacitance 1N60 germanium diode 1N60
Contextual Info: 1N60P, 1N60S POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc. Absolute Maximum Ratings Ta = 25oC

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

3VD156600YL

Abstract: 1N60SS
Contextual Info: 3VD156600YL 3VD156600YL 高压MOSFET芯片 描述 ¾ 3VD156600YL为采用硅外延工艺制造的N沟道增强 型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； 1 ¾ 较高的雪崩能量； 3 ¾ 漏源二极管恢复时间快；

bzd10

Abstract: bzv40 bzx97 bzx98 BZW22 N6075 1N6073 1N6074 1N6075 1N6076
Contextual Info: Type No. PIW to 25°C VF IR Volts Amps Volts kA t RR Device Package MICROSEMI Recommended Substitute n sec. 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6079 50 100 15 0 50 100 150 50 3.0 3.0 3.0 6.0 6.0 6.0 12.0 2.04 2.04 2.04 1.76 1.76 1.76 1.50 1.0 1.0

1n8098

Contextual Info: 1N6097 1N6098 POWER SCHOTTKY RECTIFIERS 50 Amp, 30 and 40 Volts DESCRIPTION Unitrode's series of Schottky barrier power rectifiers is ideally suited for output rectifiers and catch diodes in low voltage power supplies. The Unitrode high conductivity design, using a heavy copper top post and 4 point crimp, ensures cool

Contextual Info: GENL IN S TR / 5bE POlilER General ^ ^ Semiconductor ^ • Industries, Inc. 30Tni37 T-J/-23 THRU MECHANICAL CHARACTERISTICS DESCRIPTION • Body marked w ith Logo «J* and type number ELECTRICAL CHARACTERISTICS Clamping Factor 1.33 at full rated power 1.20 at 50% rated power

1NU7

Abstract: 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2
Contextual Info: 386 9 7 2 0 GENERAL ~fiï 86D 0 0 3 1 7 DIODE CORP Ï Ë 3öbT?2Q 0D00317 h LE A D M O U N T ED SILICO N POW ER RECTIFIERS P' TYPE y \ % D t -° -a cont'd \ \ r1' | t IH > % 'S 1, •e 25 @ 25 1@ 25 25 @ 25 > 1@ 25 IN 599 1N599A 1N600 1N600A Oo-l Do-1 Oo-l

Contextual Info: 3VD156600YL 3VD156600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.

Contextual Info: 1500 WATT BI-POLAR TRANSIENT VOLTAGE 1N6036 THRU 1N6072 SUPPRESSOR DIODES DO-13 CASE FEATURES: 5.5 thru 185 Volts The 1N6036 Series of voltage transient suppressor di­ odes are designed to protect electronic equipment from failure due to voltage transients. Their avalanche charac-

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

1N6033

Abstract: 1N6066A
Contextual Info: jcmltronicr discrete devices SEMICONDUCTORS Semitronics Corp. transient suppressors 1.5 KW DO-13 metal case bi-polar JEOEC nn NUMBER : 20 Reverse Stand-Off Voltage VR Volts Breakdown Voltage @ Maximum Clamping Voltage Maximum Reverse Leakage @ vR Maximum

SKP33A

Abstract: P8KE27A PSKE12A IN504 IN5646 P6KE0.1a P8KE P8KE24 F6KE39A IN5646A
Contextual Info: discrete jGmitronicr hot line fO L L FREE NUMBER 800-777-3960 1500 Watts peak d e v ic e s Metal Case and Epoxy Molded. Silicon Voltage Transient Suppressor Diodes DO-13 METAL MOLDED CASE Reverse Stand Off Voltage Breakdown Voltage Maximum Maximum A*Available as bi­

thyristor t 558 f

Contextual Info: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s + 1 N6 Q3 6 - 1N6072A + Series C3Y30M Control overpower h m sib ia Protection MAXIMUM RATINGS When no problems exist, Oydom TVS • Peak pulse power (Ppk): Diodes are totally invisible to the circuits

1N60S5

Abstract: 1.2V zener diodes
Contextual Info: K n o x S e m ic o n d u c t o r , in c . These low level zener diodes are designed for use at low current levels. They feature sharp knees, low leakage, low impedance, and low noise. The devices are available in the DO-7 glass package and in die form. LOW VOLTAGE AVALANCHE ZENER DIODES