2N301 Search Results

2N3019

Abstract: JAN2N3700 2N3019S 2N3019S JAN
Contextual Info: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit

2N3012

Abstract: 2N2894 2N3012M
Contextual Info: TYPES ¿«1884 2N3012 P-N-P SILICON TRANSISTORS B U L L E T IN NO. O L S 645051, A U G U S T 1964 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS • Guaranteed VCE|>ot| 0 .5 v Max at 100ma • High f , - 400 Me Min "m echanical d ata T H E COLLECTOR IS IN E L E C T R IC A L

2N3020

Abstract: 2N3019
Contextual Info: 2N3019 2N3020 JL PHILIPS INTERNATIONAL SbE T> I 7110flSb D0L»2b40 37^ • PHIN 7= 35" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for use as amplifiers and in switching circuits. QUICK REFERENCE DATA Collector-base voltage open emitter

Contextual Info: m 2N3019 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3019 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce 5.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T -65 °C to +200 °C stg 16.5 °C/W 0JC

2N3019

Abstract: 2N3019J 2N3019JS 2N3019JV 2N3019JX 2N3019 DIE
Contextual Info: 2N3019 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)

2N3019RB

Contextual Info: 2N3019RB Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)

2N3012CSM

Abstract: 400M
Contextual Info: 2N3012CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

power transistor 2n3020

Abstract: 2N3019 and applications
Contextual Info: 2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: TA=25°C

2N3012

Contextual Info: MOTOROLA SC XSTRS/R F igE D | b3b7ESM OOflba^O T | 2N3012 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage V cEO 12 Vdc Collector-Base Voltage VcBO 12 Vdc Emitter-Base Voltage Ve b O 4.0 Vdc Collector Current — Continuous

Contextual Info: ¡J8BBBBB88& p |M iwiHBBffi sm ssssP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. loniftBHhr. 1m1 IIr ^888o 88% #f 1 l Data S heet No. 2N 3019 $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N3019 Type 2N3019 G eom etry 4500 Polarity NPN Qual Level: J A N -J A N S REF: M IL-P R F -19500/391

Contextual Info: ID I 2N3019CSM SEME LAB HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0 5 1 ± 0.10 (0.02 ± 0.004) 0.31 -^/(0012i • SILICON PLANAR EPITAXIAL NPN

2N2869

Contextual Info: 2N2869/2N301 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)10 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

JANSL 2N3019S

Abstract: JANS2N3700UB 2n3019 equivalent
Contextual Info: 2N3019 and 2N3019S Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for

2N3019A

Abstract: 2N3019HR 15384 st marking code
Contextual Info: 2N3019HR Hi-Rel NPN bipolar transistor 80 V - 1 A Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL

TA550c

Abstract: 2N4033 2N3019 and applications TA-550C 2N5020 2N3019 2N3020 2N4031 550C
Contextual Info: 2N3019 2N 3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES ' * •\ • * ’ * V •’ , ¿: u \ r> r 1 ¿ 7 . j * * V / • •' ¿ r . .* i f ^ C M i ? > % - ' l,- - • , • • . i * Í ;•: i Í ■ sir4 : 1 1' ; : ; > * ?• K v y i : r ^ V ; y . ‘£

Contextual Info: 2N3014 Bipolar NPN UHF/Microwave Transisitor 1.26 Transistors UH. 1 of 1 Home Part Number: 2N3014 Online Store 2N3014 Diodes Bipo lar NPN UHF / M icro w av e Trans is it o r Transistors Enter code INTER3 at

Contextual Info: 2N3014 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products

2N2992

Abstract: 23028 2N3016 JANTX2N3440
Contextual Info: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S

2N3019 motorola

Abstract: 2N3700 MOTOROLA motorola 2N3019 2N3019 2N3700 MOTOROLA TO205AD
Contextual Info: MOTOROLA Order this document by 2N3019/D SEMICONDUCTOR TECHNICAL DATA General Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3019 2N3700 NPN Silicon Motorola Preferred Devices 2 BASE 1 EMITTER MAXIMUM RATINGS 2N3019 2N3700 Unit VCEO 80 80 Vdc Collector – Base Voltage

2N3053

Abstract: 2N3019 2N3700 2N3020 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola
Contextual Info: 2N3019* 2N3020 M A X IM U M R A T IN G S Symbol 2N3019 2N3020 2N3700 Unit Collector-Emitter Voltage VCEO 80 80 Vdc Collector-Base Voltage VCBO 140 140 Vdc Rating Emitter-Base Voltage CA SE 79-04, STYLE 1 TO-39 TO-205AD V e BO 7.0 7.0 Vdc Collector Current — Continuous

2n3019a

Abstract: 2n3019
Contextual Info: 2N3019 2N3020 Z A PHILIPS INTERNATIONAL 5bE D m 711GöSb DG42b4G 31e] HPHIN 7 = 3 5 "-/< ? SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended fo r use as amplifiers and in switching circuits. Q UICK REFERENCE D A T A Collector-base voltage open em itter

2N2222 - to-92

Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501
Contextual Info: Small Signal Leaded Devices General Purpose and Sw itching Transistors - NPN Types bvceo •c c 3 hFE lc Type Pkg (V (mA) min max (mA) 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N3019 2N3020 2N3053 2N3904 2N4123 2N4124

2N3019

Contextual Info: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit

Contextual Info: 2N3019 NPN SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES • NPN High Voltage Planar Transistor 4.19 (0.165) 4.95 (0.195) • Hermetic TO39 Package 12.70 (0.500) min. 0.89 max. (0.035)