2N3020 Search Results
2N3020 Datasheets (57)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2N3020 | Central Semiconductor | NPN SILICON TRANSISTOR | Original | 60.32KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Continental Device India | NPN SILICON PLANAR EPITAXIAL TRANSISTORS | Original | 185.2KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Semelab | Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 | Original | 10.8KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Advanced Semiconductor | Silicon Transistor Selection Guide | Scan | 393.54KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Boca Semiconductor | GENERAL TRANSISTOR NPN SILICON - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 | Scan | 139.52KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Central Semiconductor | NPN METAL CAN - SWITCHING AND GENERAL PURPOSE | Scan | 344.75KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Central Semiconductor | BJT, NPN, High Current Transistor, IC 1A - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 | Scan | 60.31KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Continental Device India | Semiconductor Device Data Book 1996 | Scan | 92.45KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Crimson Semiconductor | Transistor Selection Guide | Scan | 1.48MB | 36 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Diode Transistor | SMALL SIGNAL TRANSISTORS | Scan | 72.84KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Fairchild Semiconductor | NPN small signal general purpose amplifier. - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 | Scan | 384.76KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Fairchild Semiconductor | Full Line Condensed Catalogue 1977 | Scan | 52.69KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | General Diode | Transistor Selection Guide | Scan | 608.68KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | General Transistor | Small Signal Transistor Selection Guide | Scan | 360.35KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Great American Electronics | Silicon NPN transistor | Scan | 34.1KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Micro Electronics | NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8 | Scan | 148.19KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Micro Electronics | Semiconductor Devices | Scan | 83.66KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Micro Electronics | Semiconductor Device Data Book | Scan | 64.91KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Motorola | Motorola Semiconductor Datasheet Library | Scan | 176.15KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N3020 | Mullard | Quick Reference Guide 1977/78 | Scan | 440.61KB | 16 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2N3020 Price and Stock
Central Semiconductor Corp 2N3020- Boxed Product (Development Kits) (Alt: 2N3020) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3020 | Box | 6 Weeks | 500 |
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Get Quote | |||||
New Jersey Semiconductor 2N3020Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3020 | 1,040 | 1 |
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Buy Now | ||||||
STMicroelectronics 2N3020Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-39 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3020 | 6 |
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Get Quote | |||||||
New Jersey Semiconductor Products Inc 2N30201000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3020 | 771 |
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Philips Semiconductors 2N30201000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2N3020 | 60 |
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2N3020 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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2N3020
Abstract: 2N3019
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2n30192n30207110flsb711002b+1 | |
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Contextual Info: m 2N3020 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3020 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce P diss 5.0 W @ Tc = 25 °C Tj -65 °C to +200 °C stg -65 °C to +200 °C T 16.5 °C/W 0JC |
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2n3020 | |
power transistor 2n3020
Abstract: 2N3019 and applications
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2n30192n3020150ma500ma+3 | |
2N5225
Abstract: 2N4033 2N5042
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2n37942n39452n40292n4030+8 | |
Transistor D 798Contextual Info: ÀSII 2N3020 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3020 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 1.O A Vc e 8O V Pd is s 5.O W @ Te " 25 0C Tj -65 0C to +2OO 0C Ts t g -65 0C to +2OO 0C |
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2n3020transistor d 798 | |
2N3053
Abstract: 2N3019 2N3700 2N3020 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola
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2n30192n30202n3700o-205ad+7 | |
2n3019a
Abstract: 2n3019
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2n30192n3020dg42b4g2n3019a | |
2N2222 - to-92
Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501
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2n16132n17112n18932n2219+12 | |
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Contextual Info: 3QE D • 7^237 0031153 G T * 3s - is SGS-THOMSON [MOÛiiô&iOTlIRMOÛS 2N3019 2N3020 S G S-THOMSON HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTIO N The 2N3019 and 2N3020 are silicon planar epitax ial NPN transistors in Jedec TO-39 metal case, de signed for high-current, high-frequency amplifier |
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2n30192n3020 | |
2n3019 equivalent
Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
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2n28972n28982n28992n2900+16 | |
2N3020Contextual Info: 2N3020 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021) |
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2n3020o205ad1-aug-02 | |
pnp for 2n3019
Abstract: 2N4033 2N5020 2N3019 transistor 2N4033 2N3020 2N4031 BOX69477
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2n30192n30202n40332n4031+8 | |
2N3019 MOTOROLA
Abstract: 2N3019 2N3700 2N3020 motorola 2N3020 test 2N3700 2N3700 MOTOROLA 2N301 motorola 2N3019 2n3701
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2n30192n30202n37002n3019 motorola+6 | |
2n3019Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package Designed for use in General Purpose Amplifier and High Speed Switching Applications |
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2n30192n3020c-12020rev160102d | |
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2N3019
Abstract: 2N301 2N3019-2N3020 2N3020 2N302
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2n30192n30202n3012n3019-2n3020+1 | |
2N3019
Abstract: 2n3019 equivalent 2N3020 2N3019 and applications 2n3019 transistor 2n30201
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2n30192n30202n3019 equivalent2n3019 and applications+2 | |
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Contextual Info: 2N3020 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021) |
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2n3020o205ad19-jun-02 | |
2N3020Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N3020 Silicon NPN transistor 2N3020 is intended for high frequency amplifier applications. Package Type: TO-39 CÛ LU > ABSOLUTE IVAXIMUM RATINGS TCASE = 25°C SYMBOL Rating Collector-Emitter Voltage REB=3.0 KQ VcER Collector-Emitter Voltage |
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2n302030madc100jaadc90vdc+2 | |
2n3700
Abstract: 2n3019 2N3019 MOTOROLA motorola 2N3019
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2n30192n3020o-205ad2n3700+3 | |
2N3019 CDIL
Abstract: 2N3020 SPECIFICATIONS 2n3019 equivalent 2N3020 cdil 2n3019 equivalent 2N3019 CDIL 2N3019
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2n30192n3020c-1202n3439-40rev180701+5 | |
2N3019-2N3020Contextual Info: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS D E S C R IP T IO N The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, desi gned for high-current, high-frequency amplifier ap |
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2n30192n30202n3019-2n3020 | |
2N3019A
Abstract: 2N3501A
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o-5/to205ad/to-39t0205ad2n6972n1711+8 | |
pnp for 2n3019Contextual Info: r ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES -A 1 S& THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031. |
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2n30192n30202n40332n4031+5 | |
2N3053 NPN transistor
Abstract: BT2222A 2N22 BT2222 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020
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2n28972n28982n28992n2900+10 | |