2N3945 Search Results

Contextual Info: 2N3945 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

2N3945

Abstract: to39
Contextual Info: 2N3945 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3945 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N3945 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)70 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N22A

Abstract: 2N4271 2N3947 2N3326 2N3666
Contextual Info: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419

2N4033

Abstract: 2N3702 2N3794 2N4235 2N3107 2N3115 2N3073 2N3081 2N3108 2N3109
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. >- C A SE a < _i o CL M AXIM UM R A T IN G S Pd mW •c H V C E (S A T ) FE 'c (A ) V C EO (V ) min max max 'c f T min Cob C O M PLE­ max M EN TA RY TYPE (m A | V CE (V ) (V ) (A ) (MHz) (pF) 2N3073 2N3081 2N3107

2N5225

Abstract: 2N4033 2N5042
Contextual Info: Medium Power Amplifiers and Switches H,re COMPLE­ C* *T max MENTARY min MHz (M at) TYPE (V) Ic (A) 10 150 100 100 100 10 10 5 5 5 0.4 0.5 0.5 0.5 0.5 0.1 0.15 0.5 0.5 0.5 100 60 150+ 100 100 10 12 20 20 20 2N3108 2N3020 300 300 140 250 150 100 100 150 150

2N3444

Abstract: 2N3495 2N3665 n3742
Contextual Info: Small Signal Transistors TO-39 Case Continued T Y P E NO. D ESC R IPTIO N V C BO v CEO (V) (V) (V) (HA) @ lC h | =E v EBO IC B O v C B O <mA) (V ) ® v C E V C E (S A T ) @ ' C (m A ) (V ) (V) *'C E O *V C ER *T (M H z) C0 b *on ‘ o ff NF (PF) (n s )

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

transistor 2N3907

Abstract: t018 transistor 2N39Q4 2N3904D 2N3904DCSM 2N3906CSM T071 DUAL TRANSISTOR "Dual PNP Transistor"
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N3790X 2N3791 2N3791 CECC 2N3791-SM 2N3792 2N3792 CECC 2N3792-SM 2N3792LP CECC 2N3799 2N3799X 2N3800 2N3800DCSM 2N3801 2N3801DCSM 2N3802 2N3802DCSM 2N3803 2N3803DCSM 2N3804 2N3804DCSM 2N3805 2N3805A

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

Contextual Info: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P

2N3806 2N3906

Abstract: 2N3907 2N3904DCSM 2N2222ADCSM hirel bfy81 2N2640DCSM 2N3904D
Contextual Info: 37E S E M E L A B LTD 5133167 □□□□□17 T> fl ISMLB 7 Type No. Reliability Polarity Option 2N3763 2N3764 2N3765 2N3766 2N3767 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP PNP NPN NPN 2N3771 2N3772 2N3773 2N3782 2N3789 SCREEN SCREEN SCREEN SCREEN CECC ^

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

2n697

Abstract: 2N956 2N2905
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) V CEO h FE Coi Cob V CE(sat) h ^off PD PF MHz ns Ta 25°C MAX MIN MAX mW 250 285 800 3.0 TO-5

BSV12

Abstract: BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252
Contextual Info: Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO V VCEO (V) VEBO (V) *VCER ICBO @ VCB ( A) (V) hFE @ IC @ VCE VCE(SAT) @ IC (mA) (V) (V) (mA) *ICEO *ICES *ICEV *ICER MAX fT Cob (MHz) (pF) ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP

Contextual Info: Small Signal Transistors V (V) (V) (M ) h :E (V) ic (m A) (V) VCE(SA (V) (m A) O VCBO v CEO v EBO ICBO ® v CBO P DESCRIPTION TYPE NO. < o m TO-39 Case (Continued) ‘ 'CEO *VCER *r (MHz) C0 b *on ‘ o ff NF (PF) (ns) (ns) (dB) •TYP *TYP TYP TYP

2N4033

Abstract: 2N3704 2N3702
Contextual Info: Medium Power Amplifiers and Switches M A X IM U M R A T IN G S TYPE NO. PO LA­ R IT Y CASE Ic Pd H FE fT VcE sat VcEO Ic ^CE max (mA) (V) (V) Ic (A) min C 0b max VcER * (mW) (A) (V) min max CO M PLE­ M EN TARY TYPE (MHz) (MHz) 2N3299 N '10-39 800 0.5 30

bu808 equivalent

Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143
Contextual Info: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G

2N3444

Abstract: 2N3467 2N3468 2N3494 2N3495 2N3498 2N3499 2N3500 2N3501 2N3502
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) (V) *ICEO *ICES *ICEV *ICER MAX Cob (pF) ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP