2N3468 Search Results

2N3467

Abstract: 2m324
Contextual Info: TYPES « i r i 2N3467, 2N3468 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 0 5 7 6 , M A Y 1 9 6 8 - flE V IS E D M A R C H 1973 DESIGNED FOR HIGH-SPEED CORE-DRIVER APPLICATIONS • High Dissipation Capability. . . 10 Watts at 25°C Case Temperature

2N3025

Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
Contextual Info: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720

CHIP transistor 348

Abstract: 6706 2N3468
Contextual Info: Data Sheet No. 2N3468 Generic Part Number: 2N3468 Type 2N3468 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/348 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using

Contextual Info: 2N3468 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

2N3468

Abstract: 2N3467 PNP transistor 500ma 30v
Contextual Info: DATA SHEET 2N3467 2N3468 PNP SILICON TRANSISTOR JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3467, 2N3468 types are Silicon PNP Switching Transistors designed for core driver applications MAXIMUM RATINGS TA=25°C Collector-Base Voltage Collector-Emitter Voltage

2N3468 JANTX

Contextual Info: 2N3468+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)5.0 V(BR)CBO (V)50 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.2 @I(C) (A) (Test Condition)1.0

2N1132A

Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743

IC CHIP 348

Abstract: 2N3468 2N3468L CHIP transistor 348
Contextual Info: Data Sheet No. 2N3468L Generic Part Number: 2N3468 Type 2N3468L Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/348 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case.

2N4033

Abstract: 2N3494 2N5415
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637

2N3467

Abstract: 2N3467 MOTOROLA
Contextual Info: 2N3467* 2N3468* M A XIM U M RATINGS Symbol 2N3467 2N3468 Unit Emitter-Collector Voltage VCEO -4 0 -5 0 Vdc Collector-Base Voltage VCBO -4 0 -5 0 Vdc Emitter-Base Voltage vebo -5 .0 Vdc Collector Current — Continuous ic -1 .0 Ade Total Device Dissipation @ Ta = 25°C

2N3467

Abstract: 2N3467L 2N3468 2N3468L
Contextual Info: TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/348 Devices Qualified Level 2N3467 2N3467L JAN JANTX JANTXV 2N3468 2N3468L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

100N30

Contextual Info: 2N3468 Chip: 5.0V; Geometry 6706; Polarity PNP 1.89 Transistors Bipol. 1 of 2 Home Part Number: 2N3468 Online Store 2N3468 Diodes C hip: 5 .0 V; G eo m et ry 6 7 0 6 ; Po larit y PNP Transistors Enter code INTER3 at

2N3467 MOTOROLA

Abstract: 2N3467 2n3468
Contextual Info: 2N3467* 2N3468* MAXIMUM RATINGS Symbol 2N3467 2N3468 U nit Emitter-Collector Voltage v CEO -4 0 -5 0 Vdc Collector-Base Voltage v CBO -4 0 Emitter-Base Voltage Ve b o Rating -5 0 - 5 .0 Vdc Vdc Ade Collector Current — Continuous 'C Total Device Dissipation « Ta - 25°C

Contextual Info: 2N3468L+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)500m

2N3467

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3467, 2N3468 o/' < PNP Silicon Small-Signal Transistors cr ystalo n cs 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 1 1 779 . designed for general-purpose switching applications. MAXIM UM R ATIN G S Symbol 2N3467 2N3468 Unit

2N4858 TEXAS

Abstract: 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560
Contextual Info: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt

Contextual Info: p semcofl ¿888888888 | M iwiHBBffi msssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 Data S heet No. 2N 3468 $ idL SEMICONDUCTORS G eneric Part Num ber: 2N3468 Type 2N3468 G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV REF: M IL-P R F -19 5 0 0 /3 4 8

Contextual Info: p semcofl ¿888888888 | M iwiHBBffi msssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 D a ta S h e e t No. 2 N 3 4 6 8 L $ idL SEMICONDUCTORS G eneric Part Num ber: 2N3468 Type 2N3468L G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV

2N3820

Contextual Info: riOTOROLA SC -CDIODES/OPT0 } Type Number Page Number Page Number D-S D-S S-G Power 2N3743 3-105 3-107 3-107 3-100 3-109 3-109 3-111 3-111 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2-6 2-7 2-7 THYRISTORS 2-7 3-105 2N4199 through 2N4206 2-5 3-120 TRANSISTORS

Contextual Info: 2N3468 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

150M

Abstract: 2N3468
Contextual Info: 2N3468 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 50V 0.41 (0.016) 0.53 (0.021)

SIEMENS 5SN

Abstract: 2N3406 UNITRODE DIODE 240 39 sot-89 2n3400 2N3483 2N3436 motorola
Contextual Info: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt

2n3468

Abstract: 2N3468 JANTX
Contextual Info: TECHNICAL DATA PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 348 Devices Qualified Level 2N3467 2N3467L JAN JANTX JANTXV 2N3468 2N3468L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current

2n3467

Abstract: 2N3468
Contextual Info: TECHNICAL DATA 2N3467 JAN, JTX, JTXV 2N3467L JAN, JTX, JTXV 2N3468 JAN, JTX, JTXV 2N3468L JAN, JTX, JTXV MIL-PRF QML DEVICES Processed per MIL-PRF-19500/348 PNP SILICON SWITCHING TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage