2N3440 Search Results

BU606D

Abstract: BU606 BU608D BUY18S 2N341B BSW68 2N4895 2N5154 2N5415 sis 650
Contextual Info: CRIMSON SEMICO ND UC TO R INC 2514096 CRIMSON SSlMtHt. D O Q O B B b 2 | Ti SEMICONDUCTOR 1 99D 00336 IN C D T '33 ' J EPITAXIAL PLANAR - TO-39 PNP NPN BFX34 BSS44 BSW67 BSW68 BU125 BU125S BUY47 BUY48 BUY49S BUY68 2N341B 2N3419 2N3420 2N3421 2N3439 2N3440

2N3440S

Contextual Info: 2N3440S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 250V 0.41 (0.016)

2n3441

Abstract: 2N3442 2N3439 2N3440 2N3583 2N3584 2N3585
Contextual Info: HIGH VOLTAGE NPN HIGH VOLTAGE SELECTOR CHART TO-66 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 TO-39 <2A Package •c V CE0 Volts 2N3440 250 2N3584 2N3585 300 2N3439 350 TABLE 5 - NPN HIGH VOLTAGE TRANSISTORS The transistors shown ¡n this table are characterised for high voltage operation in industrial, commercial

cc 3053

Abstract: 2N3440U4
Contextual Info: 2N3439U4 thru 2N3440U4 Compliant NPN LOW POWER SILICON TRANSISTOR Qualified Levels: JAN, JANTX, JANTXV and JANS* Qualified per MIL-PRF-19500/368 *2N3440U4 only DESCRIPTION This family of 2N3439U4 through 2N3440U4 high-frequency, epitaxial planar transistors

2N5415

Contextual Info: N AUER PHILIPS/DISCRETE t. T E bbS3^31 0023138 OST 2N3439 2N3440 D IAPX SILICON NPN HIGH-VOLTAGE TRANSISTORS NPN high-voltage small-signal transistors in a TO-39 envelope and intended for use in telephony and professional communication equipment. Complementary type is 2N5415/5416.

2N5251

Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421
Contextual Info: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX

2N3439 JANS

Contextual Info: 2N3439UA thru 2N3440UA Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of 2N3439UA through 2N3440UA high-frequency, epitaxial planar transistors

LCC3 weight

Abstract: TRANSISTOR 023 2N3439 2N3439CSM4 2N3440 2N3440CSM4
Contextual Info: 2N3439CSM4 2N3440CSM4 SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13

Contextual Info: 2N3440S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 250V 0.41 (0.016)

2n3440

Abstract: 2N3439
Contextual Info: 2N3439 2N3440 SILICON NPN TRANSISTORS • SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N3439, 2N3440 are high voltage silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications.

2N3439

Abstract: 2N3440
Contextual Info: Transys Electronics L I M I T E D NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS Ta=25 deg C unless otherwise specified DESCRIPTION

Contextual Info: IMI = l t = «= = ìvx = 2N3439DCSM 2N3440DCSM 5 E IVI E LAB HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 2 .29 ± 0.20

Contextual Info: 2N3440+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition)250 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)50m

Contextual Info: 2N3440L+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)800m Maximum Operating Temp (øC)200 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)50m

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

TEXAS 2N3439

Abstract: pf30n 2n3439 TEXAS INSTRUMENTS 2N3439
Contextual Info: TYPES 2N3439. 2N3440 N-P-N SILICON POWER TRANSISTORS HIGH-VOLTAGE POWER TRANSISTORS DESIGNED FOR INDUSTRIAL AND M ILIT A R Y APPLICATIONS CO H C < r *o r m m Vi • Min V BR CEO ° f 350 V (2N3439) • Max VcE(sat) of 0.5 V at lc = 50 mA 5i • Min f j of 15 MHz at 10 V , 20 mA

2N2201

Abstract: 2k4037 2N3637 semicoa npn general purpose medium speed 2N4358 2N2008 2N3114 2N3498 2N3499 2N3500
Contextual Info: 8134693 SEMICQA NPN GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS Cont’d Type NPN 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2N3500 2K3501 2N4926 2N2726 2N2727 40412 2N4927 2N3440 2N5279 2N3439 2N5092 Electrical Characteristics @ 25°C Maximum Ratings

TRANSISTOR BDX 286

Abstract: 2N3439 transistor TIP 350 2n344o 1N914 2N3440 TEXAS 2N3439 2n3439 TEXAS INSTRUMENTS TIP 525
Contextual Info: TYPES 2N3439, 2N3440 N-P-N SILICON POWER TRANSISTORS H IGH-VO LTAGE POWER TRA N SISTO RS DESIGN ED FO R IN D U STRIA L AND M ILIT A R Y APPLICATIONS • Min V B R CEO ° f 350 V (2N3439) • Max VcE(sat) ° f 0-5 V at lc = 50 mA • Min f j of 15 MHz at 10 V , 20 mA

Contextual Info: 2N3439U4 thru 2N3440U4 Available on commercial versions NPN LOW POWER SILICON TRANSISTOR Qualified Levels: JAN, JANTX, JANTXV and JANS* Qualified per MIL-PRF-19500/368 *2N3440U4 only DESCRIPTION This family of 2N3439U4 through 2N3440U4 high-frequency, epitaxial planar transistors

2N3440

Abstract: 2N3439 P008B Transistor 2n3440
Contextual Info: 2N3439 2N3440 SILICON NPN TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications.

2n3440 equivalent

Abstract: JAN 2N3439 UA 2N3439 JANTX
Contextual Info: 2N3439 thru 2N3440 Qualified Levels: JAN, JANTX, JANTXV and JANS NPN LOW POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/368 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage.

2N3439 COMPLEMENTARY

Abstract: 2N3439 Transistor N3439 2N3440 N3439 2N3440 COMPLEMENTARY 2N5415
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbSB'îBl DDEfllBfi DST M A P X 2N3439 2N3440 A SILICON NPN HIGH-VOLTAGE TRANSISTORS NPN high-voltage small-signal transistors in a TO-39 envelope and intended fo r use in telephony and professional communication equipment.

BUX98PI

Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
Contextual Info: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490

2N3440 MOTOROLA

Abstract: 2N5416 motorola 2n3439 motorola 2N3439 2N5415 MOTOROLA 2N3440 2N5415 2N6410 motorola 2n5416 transistor 2n3439
Contextual Info: M A X IM U M RATIN G S IP Symbol Rating NF»N 2N3440 2NC41B 2N5416 2N3439 Collector-Emltter Voltage Vc e o 200 300 360 260 Vdc Collector-Base Voltage Vc b O 200 350 490 300 Vdc Emitter-Base Voltage Vebo 4.0 6.0 7.0 7.0 Vdc Baas Current Ib 0.5 Ade Collector Current —