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2N5250 Datasheets (26)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N5250	API Electronics	Short form transistor data	Short Form	PDF	51.61KB	1
2N5250	Diode Transistor	NPN Transistor Selection Guide	Scan	PDF	136.71KB	2
2N5250	Diode Transistor	Transistor Short Form Data	Scan	PDF	137.14KB	2
2N5250	General Diode	Transistor Selection Guide	Scan	PDF	608.68KB	10
2N5250	General Transistor	NPN Power Transistors	Scan	PDF	188KB	2
2N5250	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	113.25KB	1
2N5250	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	91.75KB	1
2N5250	Unknown	Vintage Transistor Datasheets	Scan	PDF	54.13KB	1
2N5250	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	121.17KB	1
2N5250	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	56.44KB	1
2N5250	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	88.82KB	1
2N5250	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	170.2KB	1
2N5250	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	152.39KB	1
2N5250	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	89.28KB	1

2N5250	New England Semiconductor	NPN TO-53 / TO-114 Transistor	Scan	PDF	69.01KB	1
2N5250	New England Semiconductor	BIPOLAR NPN TRANSISTOR TO-63	Scan	PDF	34.86KB	1
2N5250	New England Semiconductor	NPN Transistors, TO-63 / TO-114	Scan	PDF	68.52KB	1
2N5250	Pirgo Electronics	Low Frequency Silicon Power Transistor	Scan	PDF	51.1KB	1
2N5250	Pirgo Electronics	SILICON PLANAR POWER TRANSISTOR	Scan	PDF	192.8KB	2
2N5250	Pirgo Electronics	Silicon Planar Power Transistors	Scan	PDF	190.31KB	1

2N5250 Price and Stock

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Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N5250		1			1 $162.00 10 $162.00 100 $162.00 1000 $162.00 10000 $162.00	Buy Now

2N5250 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2N5250+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)125 I(C) Max. (A)90 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	2n5250 freq10m time2000n	PDF
SDT96302 Abstract: TO114 SDT96303 transistor 2n4866 2N5250 2N5251 SDT96301 TO-114 C3284 power transistor 2N4866 Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N4865 2N4866 2N5250 2N5251 SDT96301 SDT96302 SDT96303 SDT96401 SDT96402 SDT96403 SDT96901 SDT96902 SDT96903 80 120 100 150 60 100 140 60 100 140 60 100 140 10/40 10/40 10/40 10/40 10 10 10 10 10 10 10 10 10 70.0 70.0	Original	2n4865 2n4866 2n5250 2n5251 +10sdt96301 sdt96302 sdt96303 sdt96401 sdt96402 sdt96403 to114 transistor 2n4866 to-114 c3284 power transistor	PDF
TO114 Contextual Info: Micmsemi NPN Transistors Pa rt N u m b e r M ic ro s e m i P ackage D iv is io n O u tlin e Type Mil ; Data Î 2N568S 2N5686 2N6322 2N6324 2N6323 2N6325 2N5587 2NS588 2N4865 2N5250 2N4866 2N5251 PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, Inc.	OCR Scan	2n568s 2n5686 2n6322 2n6324 +72n6323 2n6325 2n5587 2ns588 2n4865 2n5250 to114	PDF
Contextual Info: t3592 A P I A P I' E LE CT RONI C S E L E C T RONI C S INC INC 93A0032 T-33-15 ^3 loD^S^a DE -T -3 3 -1 5 ' i b 0D00D3H 5 POWERlffANSISTO ENGINEERING BULLETIN I 2N5250 TYPE 2 N 5 2 5 0 ,9 0 AM P N PN SILICON PLANAR P O W iR f RANSESTOR LINEAR hFEFROM 100 mA TO 90 AMPS	OCR Scan	t3592 93a0032 t-33-15 0d00d3h +12n5250	PDF
2N5415 Contextual Info: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420	OCR Scan	o-111 o-5/39 o-114 2n5415	PDF
2N1479 Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786 Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863	OCR Scan	o-39/to-5 d00d1ss 515tqft 2n1479 +92n1480 2n1481 2n1482 2n1700 2n5784 2n5785 2n5781 2n5782 2n5786	PDF
2N558B Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002 Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors TypNo. VCEO (•!) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265	OCR Scan	0-300v 2n1936 2n1937 2n3265 +112n3266 2n5250 2n5251 2n5489 2n5587 2n558b 2n3s49 2n3846 2n3847 2n3848 2n4002	PDF
TO63 package Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003 Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3	OCR Scan	2n3265 2n3266 2n3846 2n3847 +102n4002 2n4003 2n5539 2n6046 2n6047 2n6048 to63 package 2n5250 transistor 114 2n3150	PDF
2N5251 Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114 Contextual Info: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20	OCR Scan	000g05 2n1936 2n1937 2n3265 +112n3266 1o05w1o 2n5250 2n5251 2n5489 2n5587 2n3846 2n3847 2n3849 2n4002 to114	PDF
2N5251 Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421 Contextual Info: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX	Original	2n2880 2n3418 2n3419 2n3420 +112n3421 2n3439 2n3440 2n3740 2n3741 2n3749 2n5251 2n5250 2n5327 2n3902 2n3996 equivalent transistor	PDF
2N2819 Abstract: 2N3149 2N3150 2N3151 2N5575 2N5587 2N5588 AP1066 AP1068 AP1110 Contextual Info: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC 26C INC Ëb d ÊT\| 00240 00435^2 0 *T=‘ 3 3 - .Û I □□□□E4D 1 COLLECTOR CURRENT = 7 0 AMPS N PN TYPES D ev ice No C ase 2N3149 TO114 TO114 TO114 TO114 TO 114 TO114 2N3150 2N3151 A P1068 A P1110 AP1123	OCR Scan	2n3149 2n3150 2n3151 ap1068 +11ap1110 ap1123 2n5250 2n5251 ap1067 ap1091 2n2819 2n5575 2n5587 2n5588 ap1066	PDF
2NS604 Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302 Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75	OCR Scan	2n2387 2n2988 2n2s89 2n2990 +162n2991 2n2992 2n2993 2n2994 2n3439 2n3440 2ns604 2ns540 2ns154 sd716 sdt13305 2n5671 2n5005 sdt425 sdt7605 sdt96302	PDF
SILICON TRANSISTOR CORP Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060 Contextual Info: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP TVS07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V	OCR Scan	8e54022 fe20-120 30mhz ftto40m +1550mhz 2n4863 2n5662 n5663 2n5333 silicon transistor corp stp515 2n4114 2n4211 2n5609 transistor 2n5627 2n5678 2n5251 2n5609 stp6060	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11ta0a12 a025a a0290 u0u55 +16a0291 a0292 a0305 a0306 a0a56 a0a59 aeg diode si 61 l aeg diodes d6 sgs transistors bc23b siliconix u315 mz306 by126 bcv59 ac128 2n3680	PDF

AP1110 Abstract: 2N4866 AP1123 2N2819 2N3149 2N3150 2N3151 2N5575 2N5587 2N5588 Contextual Info: 0043592 A P I A P I ELECTRONICS INC _26C 00240 ELEC T RO N IC S INC 2b D-7Î.33.ÛI D E :\| Q Q 4 3 S C1S 0000240 1 f COLLECTOR CURRENT = 7 0 AMPS NPN TYPES Device No 2N3149 2N3150 2N3151 AP1068 AP1110 AP1123 Case TO114 TO114 TO114 TO114 TO114 TO 114	OCR Scan	d043st2 2n3149 2n3150 2n3151 +10ap1068 ap1110 ap1123 2n4866 2n5250 2n5251 2n2819 2n5575 2n5587 2n5588	PDF
2N5239 Abstract: 2N5157 2N5202 2N5218 2N5237 2N5238 2N5240 2N5241 2N5250 2N5251 Contextual Info: • PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN hf: E V OLTAGE S NPN SAT . V O LT A GES M 3X. CASE V CE VCE V CB V EB •c (V) (A) M in. Max. (A) •b (A) V CE (V) V BE (V) 2N5157 TO-3 700 500 6 5 1 30 90 1 0.7 2.5 2 2N5202 TO-66 100 50	OCR Scan	2n5157 2n5202 2n5218 2n5237 +72n5238 2n5239 2n5240 2n5241 2n5250 o-114 2n5251	PDF
Transistors 2n551 Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444 Contextual Info: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts	OCR Scan	2n339 2n339a 2n340 2n340a +162n341 2n341a 2n342 2n342a 2n343 2n343a transistors 2n551 heat sink to-39 2n1904 2n5068 2n2995 2n3916 2n3599 2n2951 2n3142 2n3444	PDF
4010 IC Abstract: 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266 Contextual Info: NEU ENGLAND SEMICONDU CTOR b S b M ' m D000GS7 m 3 SRE D «NES Ic max — 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fT = 0.6 to 3 0 MHz NPN TÜ-63 Case 807 V ce (sat ) @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (V @A/A) VBE @ IC/VCE (V @ A/V) pd @ TC = 100 °C (Watts)	OCR Scan	0000g57 2n1936 2n1937 2n3265 +13102cv2 2n3266 602w2 2n4950 2n5250 507qt7 4010 ic 2n6062 2n5927 ic 4010 2n4866 50110 to-114	PDF
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan	mc2259 mc880p mc9713p mc2257 +61n4003 germanium diode specification 2n1256 s p 1n4465 mc9802p mc9718p 3n214	PDF
RCA SK CROSS-REFERENCE Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1 Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered	OCR Scan	rca sk cross-reference cd4003 2n2505 tf408 +61n4465 250pa120 2n3017 pt 3570 trw rf pa189 semicon volume 1	PDF
2N2222A mps Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304 Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71	OCR Scan	1n34a 1n55ab 1n100 1n102 +161n103 1n104 1n107 1n108 1n111/1n117 2n2222a mps 2n512ab 2n2222 mps 1n1096 1n589 1n4007 - 2n4001 2n698 scr 1n233a 1n20461 2n3304	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500ma 240mwf y51 h 120c bd124 +8kt368 bfq59 silec semiconductors bd214 al103 afy18 bd192 mm1711	PDF
2N5250 Abstract: 2N5251 mug 14 431 NIL-S-19500 2N4865 2N5151 FSC5961 2N5250 JAN Xelerated SAA 1006 Contextual Info: I I I IWE-FQUND I HIL-s-19500/380B 4 June 1991 SVPSl!5EDItK MIL-s-19500/180A( SLl 17 Septerber 1968 N2L2TARY SPECIP3CATICN SSN203N3WXUR DSV2CE, TWSISIWR,NPN,S2LIIXN,m TYPES 2N4865,2N5250,2N5251,JAIWX, JAN2’XV, ~ JANS MS s~ification is approvedfor w hy e21 Ceptusxts and lq~cies of the Deprt.uentof Defense.	Original	hil-s-19500/380b mil-s-19500/180a ssn203n3wxur typesn4865 +15n5250 n5251 nil-s-19500 f3-114 force-17 koject5961-1222 2n5250 2n5251 mug 14 431 2n4865 2n5151 fsc5961 2n5250 jan xelerated saa 1006	PDF
2H2904 Abstract: 2NI483-86 Contextual Info: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879	OCR Scan	2n389 2n424 2n1047a-50a 2n1479-82 +72ni483-86 2n1478-90 2k1714-2n1722 2n1724 2n2015 2h2904	PDF

2N5250 Search Results

2N5250 Datasheets (26)

2N5250 Price and Stock

Others 2N5250

2N5250 Datasheets Context Search

SDT96302

TO114

2N5415

2N1479

2N558B

TO63 package

2N5251

2N5251

2N2819

2NS604

SILICON TRANSISTOR CORP

aeg diode Si 61 L

AP1110

2N5239

Transistors 2n551

4010 IC

MC2259

RCA SK CROSS-REFERENCE

2N2222A mps

y51 h 120c

2N5250

2H2904