2N5251 Search Results

2N5251 Datasheets (22)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N5251	API Electronics	Short form transistor data	Short Form	PDF	51.61KB	1
2N5251	Diode Transistor	NPN Transistor Selection Guide	Scan	PDF	136.71KB	2
2N5251	Diode Transistor	Transistor Short Form Data	Scan	PDF	137.14KB	2
2N5251	General Diode	Transistor Selection Guide	Scan	PDF	608.68KB	10
2N5251	General Transistor	NPN Power Transistors	Scan	PDF	188KB	2
2N5251	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	113.25KB	1
2N5251	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	91.75KB	1
2N5251	Unknown	Vintage Transistor Datasheets	Scan	PDF	54.13KB	1
2N5251	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	121.17KB	1
2N5251	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	56.44KB	1
2N5251	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	88.82KB	1
2N5251	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	170.2KB	1
2N5251	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	152.39KB	1
2N5251	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF	89.28KB	1

2N5251	New England Semiconductor	NPN TO-53 / TO-114 Transistor	Scan	PDF	69.01KB	1
2N5251	New England Semiconductor	BIPOLAR NPN TRANSISTOR TO-63	Scan	PDF	34.86KB	1
2N5251	New England Semiconductor	NPN Transistors, TO-63 / TO-114	Scan	PDF	68.52KB	1
2N5251	Pirgo Electronics	Low Frequency Silicon Power Transistor	Scan	PDF	51.1KB	1
2N5251	PPC Products	Transistor Short Form Data	Scan	PDF	484.47KB	1
2N5251	Solidev Semiconductors	Solid State Products (Transistor Guide)	Scan	PDF	106.39KB	2

2N5251 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SDT96302 Abstract: TO114 SDT96303 transistor 2n4866 2N5250 2N5251 SDT96301 TO-114 C3284 power transistor 2N4866 Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N4865 2N4866 2N5250 2N5251 SDT96301 SDT96302 SDT96303 SDT96401 SDT96402 SDT96403 SDT96901 SDT96902 SDT96903 80 120 100 150 60 100 140 60 100 140 60 100 140 10/40 10/40 10/40 10/40 10 10 10 10 10 10 10 10 10 70.0 70.0	Original	2n4865 2n4866 2n5250 2n5251 +10sdt96301 sdt96302 sdt96303 sdt96401 sdt96402 sdt96403 to114 transistor 2n4866 to-114 c3284 power transistor	PDF
TO114 Contextual Info: Micmsemi NPN Transistors Pa rt N u m b e r M ic ro s e m i P ackage D iv is io n O u tlin e Type Mil ; Data Î 2N568S 2N5686 2N6322 2N6324 2N6323 2N6325 2N5587 2NS588 2N4865 2N5250 2N4866 2N5251 PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, PPC, Inc.	OCR Scan	2n568s 2n5686 2n6322 2n6324 +72n6323 2n6325 2n5587 2ns588 2n4865 2n5250 to114	PDF
2N1479 Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786 Contextual Info: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863	OCR Scan	o-39/to-5 d00d1ss 515tqft 2n1479 +92n1480 2n1481 2n1482 2n1700 2n5784 2n5785 2n5781 2n5782 2n5786	PDF
2N558B Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002 Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors TypNo. VCEO (•!) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265	OCR Scan	0-300v 2n1936 2n1937 2n3265 +112n3266 2n5250 2n5251 2n5489 2n5587 2n558b 2n3s49 2n3846 2n3847 2n3848 2n4002	PDF
TO63 package Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003 Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3	OCR Scan	2n3265 2n3266 2n3846 2n3847 +102n4002 2n4003 2n5539 2n6046 2n6047 2n6048 to63 package 2n5250 transistor 114 2n3150	PDF
2N5251 Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114 Contextual Info: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20	OCR Scan	000g05 2n1936 2n1937 2n3265 +112n3266 1o05w1o 2n5250 2n5251 2n5489 2n5587 2n3846 2n3847 2n3849 2n4002 to114	PDF
2N5251 Abstract: 2N5250 2N5327 2N3902 2n3996 equivalent transistor 2N2880 2N3418 2N3419 2N3420 2N3421 Contextual Info: Device Type 2N2880 JAN, TX, TXV 2N3418 JAN, TX, TXV 2N3419 JAN, TX, TXV 2N3420 JAN, TX, TXV 2N3421 JAN, TX, TXV 2N3439 JAN, TX, TXV 2N3440 JAN, TX, TXV 2N3740 JAN, TX, TXV 2N3741 JAN, TX, TXV 2N3749 JAN, TX, TXV 2N3846 JAN, TX 2N3847 JAN, TX 2N3902 JAN, TX	Original	2n2880 2n3418 2n3419 2n3420 +112n3421 2n3439 2n3440 2n3740 2n3741 2n3749 2n5251 2n5250 2n5327 2n3902 2n3996 equivalent transistor	PDF
2N2819 Abstract: 2N3149 2N3150 2N3151 2N5575 2N5587 2N5588 AP1066 AP1068 AP1110 Contextual Info: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC 26C INC Ëb d ÊT\| 00240 00435^2 0 *T=‘ 3 3 - .Û I □□□□E4D 1 COLLECTOR CURRENT = 7 0 AMPS N PN TYPES D ev ice No C ase 2N3149 TO114 TO114 TO114 TO114 TO 114 TO114 2N3150 2N3151 A P1068 A P1110 AP1123	OCR Scan	2n3149 2n3150 2n3151 ap1068 +11ap1110 ap1123 2n5250 2n5251 ap1067 ap1091 2n2819 2n5575 2n5587 2n5588 ap1066	PDF
2NS604 Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302 Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75	OCR Scan	2n2387 2n2988 2n2s89 2n2990 +162n2991 2n2992 2n2993 2n2994 2n3439 2n3440 2ns604 2ns540 2ns154 sd716 sdt13305 2n5671 2n5005 sdt425 sdt7605 sdt96302	PDF
SILICON TRANSISTOR CORP Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060 Contextual Info: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP TVS07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V	OCR Scan	8e54022 fe20-120 30mhz ftto40m +1550mhz 2n4863 2n5662 n5663 2n5333 silicon transistor corp stp515 2n4114 2n4211 2n5609 transistor 2n5627 2n5678 2n5251 2n5609 stp6060	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11ta0a12 a025a a0290 u0u55 +16a0291 a0292 a0305 a0306 a0a56 a0a59 aeg diode si 61 l aeg diodes d6 sgs transistors bc23b siliconix u315 mz306 by126 bcv59 ac128 2n3680	PDF
AP1110 Abstract: 2N4866 AP1123 2N2819 2N3149 2N3150 2N3151 2N5575 2N5587 2N5588 Contextual Info: 0043592 A P I A P I ELECTRONICS INC _26C 00240 ELEC T RO N IC S INC 2b D-7Î.33.ÛI D E :\| Q Q 4 3 S C1S 0000240 1 f COLLECTOR CURRENT = 7 0 AMPS NPN TYPES Device No 2N3149 2N3150 2N3151 AP1068 AP1110 AP1123 Case TO114 TO114 TO114 TO114 TO114 TO 114	OCR Scan	d043st2 2n3149 2n3150 2n3151 +10ap1068 ap1110 ap1123 2n4866 2n5250 2n5251 2n2819 2n5575 2n5587 2n5588	PDF
4233A Abstract: 535x 184 324 DIODE 2N5383 2N3055C Contextual Info: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8	OCR Scan	533xcd01 534xcd02 535xcq01 2n1063 +62n107 4233a 535x 184 324 diode 2n5383 2n3055c	PDF
2N5239 Abstract: 2N5157 2N5202 2N5218 2N5237 2N5238 2N5240 2N5241 2N5250 2N5251 Contextual Info: • PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN hf: E V OLTAGE S NPN SAT . V O LT A GES M 3X. CASE V CE VCE V CB V EB •c (V) (A) M in. Max. (A) •b (A) V CE (V) V BE (V) 2N5157 TO-3 700 500 6 5 1 30 90 1 0.7 2.5 2 2N5202 TO-66 100 50	OCR Scan	2n5157 2n5202 2n5218 2n5237 +72n5238 2n5239 2n5240 2n5241 2n5250 o-114 2n5251	PDF

MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan	mc2259 mc880p mc9713p mc2257 +61n4003 germanium diode specification 2n1256 s p 1n4465 mc9802p mc9718p 3n214	PDF
RCA SK CROSS-REFERENCE Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1 Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered	OCR Scan	rca sk cross-reference cd4003 2n2505 tf408 +61n4465 250pa120 2n3017 pt 3570 trw rf pa189 semicon volume 1	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500ma 240mwf y51 h 120c bd124 +8kt368 bfq59 silec semiconductors bd214 al103 afy18 bd192 mm1711	PDF
2N5250 Abstract: 2N5251 mug 14 431 NIL-S-19500 2N4865 2N5151 FSC5961 2N5250 JAN Xelerated SAA 1006 Contextual Info: I I I IWE-FQUND I HIL-s-19500/380B 4 June 1991 SVPSl!5EDItK MIL-s-19500/180A( SLl 17 Septerber 1968 N2L2TARY SPECIP3CATICN SSN203N3WXUR DSV2CE, TWSISIWR,NPN,S2LIIXN,m TYPES 2N4865,2N5250,2N5251,JAIWX, JAN2’XV, ~ JANS MS s~ification is approvedfor w hy e21 Ceptusxts and lq~cies of the Deprt.uentof Defense.	Original	hil-s-19500/380b mil-s-19500/180a ssn203n3wxur typesn4865 +15n5250 n5251 nil-s-19500 f3-114 force-17 koject5961-1222 2n5250 2n5251 mug 14 431 2n4865 2n5151 fsc5961 2n5250 jan xelerated saa 1006	PDF
2N3265 Abstract: 2N5251 2N5250 2n3599 2N4865 2n4211 2N5250 JANTX t0114 2N6060 2n6278 to63 Contextual Info: A POW ERHOUSE BIPOLAR NPN PLANAR POW ER T R A N S IS T O R S TO-63 T0-114 •c VOLTS AMPS hFE min/max < < o m PEAK bvceo o DEVICE TYPE > PACKAGE VCE seti max VOLTS 'C A A 2N3265 90 20.0 25- 55 15.0/2.0 1.0 2 0 .0 /2.0 2N3266 60 20.0 20- 80 15.0/3.0 1.6	OCR Scan	2n3265 2n3266 2n3597 2n3598 +122n3599 2n4002 2n4003 2n4210 2n4211 2n6060 2n5251 2n5250 2n4865 2n5250 jantx t0114 2n6278 to63	PDF
2n5347 Abstract: a/TO111 2n5100 Contextual Info: 8254022 S I L I CON T R A N S I S T O R CORP 88D 0 0 7 9 4 “ûû D Ì T \| a 2 5 4 0 2 2 00007=14 0 NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Polarity lc Max Amps 2N4999 2N5000 2N5001 2N5002 2N5003 PNF NPN PNP NPN PNP 2.0 2.0 2.0 5,0	OCR Scan	2n4999 2n5000 2n5001 2n5002 +82n5003 o-111 2n5004 2n5005 2n5006 2n5347 a/to111 2n5100	PDF
Contextual Info: BIPOLAR NPN PLANAR POWER TRANSISTORS AMPS hFE min/max m •c < < o PEAK o O CO LU 1 O J > o m > DEVICE TYPE PACKAGE VCE sat max VOLTS ■c @ 'b A A TO-63 2N3265 90 20.0 25- 55 15.0/2.0 1.0 20.0/2.0 O I« 2N3266 60 20.0 20- 80 15.0/3.0 1.6 20.0/2.0 ÎA jl	OCR Scan	2n3265 2n3266 2n3597 2n3598 +62n3599 2n4002 2n4003 2n4210 2n6060 2n6215	PDF
TO63 package Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3	OCR Scan	2n3265 2n3266 2n3846 2n3847 +132n4002 2n4003 2n5539 2n6046 2n6047 2n6048 to63 package transistor c 2570 to114 package 2n3150 transistor 2n4866 2n5251 2n5927 jan	PDF
ap1110 Abstract: TO114 2N5251 AP1123 2N2819 2N3150 2N4866 2N3149 2N3151 2N5575 Contextual Info: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC 2 6C I NC Ëb d ÊT\| 00240 0 0 4 3 5 ^2 0 *T=‘ 3 3 - . Û I □□□□E4D 1 COLLECTOR CURRENT = 7 0 AMPS N PN TYPES D ev ice No C ase 2N3149 TO114 TO114 TO114 TO114 TO 114 TO114 2N3150 2N3151 A P1068 A P1110	OCR Scan	2n3149 2n3150 2n3151 ap1068 +10ap1110 ap1123 2n5250 2n5251 ap1067 ap1091 to114 2n2819 2n4866 2n5575	PDF
Contextual Info: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) * NPN Power Transistors (A) hFE&C/VCE (mln-mu A/V) VCE(SAT) ©IC/IB (V0A/A) VBE ©IC/VCE (V© A/V) VBE(SAT) ©OB (V A/V) 60 80 90 60 20 20 20 20 10-50 @10/10 10-50 @10/10 25-55 @15/2	OCR Scan	2n3848 2n3s49 2n4002 2n4003 +32n4210 2n4211 2n5539	PDF

2N5251 Search Results

2N5251 Datasheets (22)

2N5251 Datasheets Context Search

SDT96302

TO114

2N1479

2N558B

TO63 package

2N5251

2N5251

2N2819

2NS604

SILICON TRANSISTOR CORP

aeg diode Si 61 L

AP1110

4233A

2N5239

MC2259

RCA SK CROSS-REFERENCE

y51 h 120c

2N5250

2N3265

2n5347

TO63 package

ap1110