2N5006 Search Results

2N5006

Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
Contextual Info: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1

TO111

Abstract: TO61 U 114
Contextual Info: G27 ELECTRONICS, INC. \ -15 COLLECTOR CURRENT = 10 AM PS NPN TYPES— ConWnued C ue VCBO Volt 2N3920 2N4070 2N4071 2M 150 JAN 2N4150 JT X • ÎN4150 2N4301 2N4347 2N4348 2N5006 T O -3 T O -3 T O -3 T O -5 T O -5 120 120 200 100 100 60 100 150 80 80 6 8

Contextual Info: General Transistor Corporation CASE le max = 10-20A NPN Power Transistors V c e o (s u s ) • ISOLATED COLLECTOR VCEO VCE(SÀT) IC/1B (V0A/A) M 1C (mu) (A) 2N5006 2N5008 2N5288 2N5289 B0 80 100 100 10 10 10 10 30-90 @ 5/5 70-200 @ 5/5 30-90 @5/5 70-200 @5/5

Contextual Info: SOLID STATE DEVICES INC 15E D | f l 3 t b 0 1 1 D0020Ô3 1 | T ' 3 3 2N5006 AND 2N5008 10 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS - IS 2>^m\ 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 CASE STYLE T

2n3920

Abstract: 2n8249
Contextual Info: 0043592 A P I A P I _ 2 6 C ELECTRONICS INC 2b ELECTRONICS INC n— — D eT | O D ^ S 1^ a< 0000230 T | COLLECTOR CURRENT = 10 AMPS NPN TYPES - CONTINUED Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JTX * 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008

2N5076

Abstract: 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N4116
Contextual Info: NEIII ENGLAND SEMICONDUCTOR STE D • b5b4^3 □□□□OSa QflT B i NES ' 7 2N5006 VCEO SUS (V) 1C (MAX) W tlFE IC/VCE (min-max ® A/V) VBE (SAT) ® IC/lB (V @A/A) TC = 100 °C (Watts) 1 = 1 B6C (A ® V) ff tON @ ICJlB tOFF ® IC/lB (MHz) (¿is @ A/A)

Contextual Info: I SPACE POWER ELECTRONICS ST DE~| A4403SS ••00106 1 | ^ * 3 3 - 0 / _ Hi-Rel PLANAR P O K E R - 1 0 AMP NPN FOR DETAILED SPECIFICATIONS CONTACT ENGINEERING Breakdown Voltages TYPE CASE V 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150 2N5152

2N3920

Abstract: 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048
Contextual Info: 0043592 A P I ELECTRONICS INC_ A P I ELECTRONICS INC 2^ 26f nn?*n n— DE | DDMBSTS 0000230 T | COLLECTOR CURRENT = 10 AMPS NPN TYPES - CONTINUED Device No 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JTX * 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048

2N5006

Abstract: 2N5007 2N5008 2N5009
Contextual Info: 2N5006 AND 2N5008 10 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS C A SE STYLE T JE D E C TO—6 1 A L L TERM IN ALS ISO LATED FROM C A S E 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 FEATURES • • •

Contextual Info: i l * ! E L E C T R O N I C S , IN C.\-15 COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No Case VCBO Volts 2N3920 2N4070 2N4071 2N4150 JAN 2N41S0 JT X * 2N4150 2N4301 2N4347 2N4348 2N5006 TO-3 TO-3 TO -3 TO-5 TO-5 120 120 200 100 100 60 100 150

2N3920

Abstract: 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348 2N5006 2N5008 2N5048
Contextual Info: i l * ! E L E C T R O N I C S , IN C.\-15 COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No Case VCBO Volts 2N3920 2N4070 2N4071 2N4150 JAN 2N41S0 JT X * 2N4150 2N4301 2N4347 2N4348 2N5006 TO-3 TO-3 TO -3 TO-5 TO-5 120 120 200 100 100 60 100 150

2N5076

Abstract: TO61 package 2N5004 JANTXV 2n5349 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR ISOLATED COLLECTOR NPN TO-61 V c eo Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS NPN TO-61 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128 2N6689 2N6690 2N6691A 2N6692 2N6693A 80 80 100 80 100 80 300 400 300 350 400 10 10 10 10

Contextual Info: COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued v CEO sus V olts Device No C ase VcBO Volts 2N3920 2N4070 2N4071 2N4150 JAN 2N4150 JT X * 2N4150 2N4301 2N4347 2N4348 2N5006 TO -3 TO -3 TO -3 T O -5 TO -5 120 120 200 100 100 60 100 150 80 80 T O -5 100

JANTX2N5157

Abstract: 2N3445
Contextual Info: Microsemi NPN Transistors Part Number 2N6316 2N3788 2N5838 2N5839 2N5840 JANTXV2N3902 2N3902 JAN2N3902 JANTX2N3902 2N5157 JAN2N5157 JANTX2N5157 JANTXV2N5157 2N5240 2N6542 2N6543 2N5049 2N5006 2NS008 2N5048 JANS2N5239 2N6563 2N6562 2N6569 2N5412 2N3597 2N3598

2N3184

Abstract: 2N3185 2N3186 2N3195 2N3196 2N3198
Contextual Info: I SPACE POWER ELECTRONICS ST DE~| A4403SS ••00106 1 | ^ * 3 3 - 0 / _ Hi-Rel PLANAR P O K E R - 1 0 AMP NPN FOR DETAILED SPECIFICATIONS CONTACT ENGINEERING Breakdown Voltages TYPE CASE V 2N4897 2N5002 2N5004 2N5006 2N5008 2N5048 2N5049 2N5148 2N5150 2N5152

SDT13305

Abstract: SDT12302 SDT13303 SDT7603 SDT7732 2N2811 2N2812 2N2813 2N2814 2N4070
Contextual Info: Device Type VCEO hFE V Min/Max @ IC (A) 2N2811 2N2812 2N2813 2N2814 2N4070 2N4071 2N4301 2N5006 2N5008 2N5218 2N5288 2N5289 2N5313 2N5315 2N5317 2N5319 2N5327 2N5540 2N5542 2N5622 2N5624 2N5626 2N5628 2N5730 2N5854 2N6128 2N6216 2N6217 2N6249 2N6250 2N6251

TO61 package

Abstract: 2N3920 TO111 package 2N6232 2N4070 2N4071 2N4150 2N4301 2N4347 2N4348
Contextual Info: t U i i E L E C T R O N I C S . IN C.\-15 COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No Case VCBO Volts 2N3920 2N4070 2N4071 2N4150 JAN 2N41S0 JT X * 2N4150 2N4301 2N4347 2N4348 2N5006 TO-3 TO-3 TO -3 TO-5 TO-5 120 120 200 100 100 60 100 150

2N5048

Abstract: 2N4301 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388 2N5542 2N5959
Contextual Info: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E INC D D O O I E 11] S 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside N Y & NJ area call T O LL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PHP Com ple­ ment VCEOfSUS) (Volte)

2u 62 diode

Abstract: 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V 8R CEO (A) Of) hFE fT 'CBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15

2N5075

Abstract: 2N5076 2N5006 2N5008 2N5288 2N5289 2N5317 2N5319 2N5731 2N5957
Contextual Info: GENERAL TRANSISTOR CORP 34E D 3^50001 GOQGQfe.T 7 * ~ F - 3 3 ~ 0 l General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 NPN Power Transistors ISOLATED COLLECTOR 1C

B316J

Abstract: 2N6188 EB-500 1N5802 2N5006 2N5007 2N5009 2N5659 2N6189 TWX910-583-4807
Contextual Info: SOLI» STATE DEVICES INC 1EE D Jfl3bbDll ODGEOfll fi | T 2N5659 10 AMP HIGH SPEED NPN TRANSISTOR 120 VOLTS CASE STYLE Z JEDECTO—111 ALL TERMINALS ISOLATED FROM CASE *•» . •«.400 * -7C J ,570 ^ .436 .42! .4üB J20 .a» . 000 ,090 t.« S \ *.215 •.135

wic 5020

Abstract: 2N5289 2N4301 2N5048 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388
Contextual Info: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E D D O O I E 11] S INC 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside NY & NJ area call TOLL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PNP C o m p le­ m en t VCEOfSUS)

2NS604

Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
Contextual Info: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75

2N5286

Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT