2N6692 Search Results

jan2n6251

Contextual Info: Memsemi NPN Transistors Part Number NPN JANTXV2N6249 2N6250 JAN2N6250 JANS2N6250 JANTX2N6250 JANTXV2N6250 2N6674 2N6689 2N6251 JAN2N6251 JANS2N6251 JANTX2N6251 JANTXV2N6251 2N6675 2N6690 2N6546 2N6676 2N6691 JAN2N6546 JANTX2N6546 JANTXV2N6546 2N6677 2N6692

2N5076

Abstract: TO61 package 2N5004 JANTXV 2n5349 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128
Contextual Info: NEW ENGLAND SEMICONDUCTOR BIPOLAR ISOLATED COLLECTOR NPN TO-61 V c eo Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS NPN TO-61 2N5006 2N5008 2N5288 2N5317 2N5319 2N6128 2N6689 2N6690 2N6691A 2N6692 2N6693A 80 80 100 80 100 80 300 400 300 350 400 10 10 10 10

aX 010

Abstract: 2N6693 JS 027
Contextual Info: ,lk 2N6676 2N6677 2N6678 2N6691 2N6692 2N6693 General 3 ^ Semiconductor ^ « Industries, Inc. HIGH POWER NPN twitch P/iff TRANSISTORS NPN 300, 350, 400V 15 A M P S W IT C H IN G t, — 300ns T Y P IC A L This rugged series o f NPN tra n s ito rs is designed fo r high speed s w itch in g

2N5048

Abstract: 2N4301 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388 2N5542 2N5959
Contextual Info: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E INC D D O O I E 11] S 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside N Y & NJ area call T O LL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PHP Com ple­ ment VCEOfSUS) (Volte)

10J2

Abstract: 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813
Contextual Info: NEW ENGLAND SEMICOND UCT OR INIPIM T O - 6 1 PNP Comple­ ment VCEO SUS (V) 0000053 [ See page 13 for isolated collector versions Case 805 Type No. S^E D VCE (SAT) @ IC/lB ( V @ A/A) VBE @ IC/VCE (V @ Art) VBE (SAT) @ IC/lB STÛ • NES I(max) = 5 to 2 0 A

wic 5020

Abstract: 2N5289 2N4301 2N5048 2N5049 2N5218 2N5313 2N5315 2N5387 2N5388
Contextual Info: ^4 ^TRANSISTOR CO DE J a ñ M ñ 3 S E D D O O I E 11] S INC 84D 00129 D10DETRdf\l515T0R TO., INC. 201 686-0400 • Telex: 139-335 • Outside NY & NJ area call TOLL FREE 600-526-4581 FAX No. 201-575-5863 NPNTO-61 Type# PNP C o m p le­ m en t VCEOfSUS)

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2N1724

Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
Contextual Info: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE |n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i

1040B

Abstract: 2N3910 svt6062 2n5100
Contextual Info: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.

2N6805

Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab

GSTU4040

Abstract: 2n6547 jantx
Contextual Info: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0

9300

Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
Contextual Info: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30

Contextual Info: General Transistor Corporation CASE le max ss TO-61 5 to 20A Vceo(sus) = 40-300V NPN Power Transistors VBE(SAT) 0IC/1B (V & A/V) ICEV0VCE (mA V) PO® TC = 25*C (W.M) Wt>®VCE I I I wc (A ®V) Ir (MHz) ton & W B (ju ® A/A) tOFF @IC/1B (p»®AfA) 1 @ 21.2

2N3729

Abstract: 2N3551 2N6925A 2N6583 2N6923 2n6924
Contextual Info: AVAILABLE GEOMETRIES — SORTED BY Ic MAX lcMAX BV ceo Ran§e BV ebo Ran8e Low Current HfE From V To (V) From (V) To (V) @ lc mA Mid-Range HfE High Current HtE Typ VCE(sat) Typ Typ Cib @ 0.5V Cob @ 10V ^S/b A Geom. Pol. Use Code 0.03 0014 PNP 2 10 25 4 6

2N5077

Abstract: 2N5076 2N5348 2N5288 2N5317 2N5006 2N5008 2N5319 2N6128 2N5347
Contextual Info: N EW ENGLAND SEMICONDUCTOR BIPOLAR ISOLATED COLLECTOR NPN TO-61 sus VOLTS Ic (max) AMPS V c eo PACKAGE DEVICE TYPE V Vc e (min/max @ A/V) ^FE@ V CE(jat) @ Ic^B (V @ A/A) p * r D fx WATTS (MHz) NPN 2N5006 80 10 30-90@5/5 1.5@10/1 67 30 TO-61 2N5008 80 10

2SC2751M

Abstract: 2sd377 bup13
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= TIP531 TIP531 TIP533 TIP533 TIP533 BUP23 BUP23 BUP23 BUS23 BUS23 20 25 30 35 40 45 50 (A) (A) (A) (A) CAl SDM4039 SDM4041 BU121 BUX13 SDM4040 SDM4045 SML14413 PTC6677P 2N6934 2N6934 MJH6677 RJH6677 2N6677

2N5302 EB

Abstract: 2N1463 2n4271
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3

Contextual Info: NEW ENGLAND SEMICONDUCTOR STE D • bSbMTTa 0000053 [ Case 805 Type No. 2N1724 2N1724A PNP Comple­ ment VCE SAT @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (v VBE @ IC/VCE (V @ A/V) * N E S I(max) = 5 to 2 0 A V ceo(sus) = 4 0 -3 0 0 V fT = 1 to 4 0 MHz NPN TO-61

2N2692

Abstract: 2n3718 Maa 325 2N6378 2N1495 2N5055 2N5143 2N5867 2N5872 2N6563
Contextual Info: G E N E R A L T R A N S I S T O R CO R P 24E D • 3^SaD01 D O D O D ^ fi ■ G eneral T ran sisto r Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905