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Microchip Technology Inc
2N6675 Trans GP BJT NPN 400V 15A 2-Pin TO-3 Tray - Trays (Alt: 2N6675)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 2N6675 Tray 0 100 - - $102.79 $94.19 $94.19 Buy Now
Microchip Technology Inc
JAN2N6675 Power Silicon Transistor 400V 15A 2-Pin TO-204AA - Trays (Alt: JAN2N6675)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet JAN2N6675 Tray 0 100 - - $129.29 $118.39 $118.39 Buy Now
VPT Components
JAN2N6675 NPN POWER TRANSISTOR - Bulk (Alt: JAN2N6675)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet JAN2N6675 Bulk 0 12 - - $108.79 $106.19 $106.19 Buy Now
VPT Components
2N6675JANTX NPN POWER TRANSISTOR - Bulk (Alt: JANTX2N6675)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 2N6675JANTX Bulk 0 12 - - $111.69 $108.99 $108.99 Buy Now
VPT Components
2N6675JANTXV NPN POWER TRANSISTOR - Bulk (Alt: JANTXV2N6675)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 2N6675JANTXV Bulk 0 9 - $149.69 $137.09 $137.09 $137.09 Buy Now
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Microchip Technology Inc
2N6675JANTXV NPN Silicon Power Transistor 400VDC 2-Pin TO-3 Tray - Trays (Alt: JANTXV2N6675)
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Avnet 2N6675JANTXV Tray 0 100 - - $168.49 $154.29 $154.29 Buy Now
RCA
2N6675
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics 2N6675 63 1 $8.96 $4.48 $3.8824 $3.8824 $3.8824 Buy Now
STMicroelectronics
2N6675
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
Bristol Electronics 2N6675 2 - - - - - Buy Now
Others
2N6675
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000 Buy
PUI 2N6675 226 - - - - - Buy Now

2N6675 datasheet (29)

Part Manufacturer Description Type PDF
2N6675 Central Semiconductor Power Transistors Original PDF
2N6675 Microsemi NPN Power Silicon Transistor Original PDF
2N6675 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=400 / Ic=15 / Hfe=8-20 / fT(Hz)=15M / Pwr(W)=175 Original PDF
2N6675 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N6675 Allen-Bradley Electronic Component Data Book 1985 Scan PDF
2N6675 Central Semiconductor TO-3 Case Power Transistors Scan PDF
2N6675 Diode Transistor Transistor Short Form Data Scan PDF
2N6675 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
2N6675 General Electric High Voltage Bipolar Power Transistors Scan PDF
2N6675 Harris Semiconductor 10 Amp, SwitchMax Power Transistors Scan PDF
2N6675 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6675 Others Transistor Shortform Datasheet & Cross References Scan PDF
2N6675 Others Shortform Transistor PDF Datasheet Scan PDF
2N6675 Others Shortform Transistor PDF Datasheet Scan PDF
2N6675 Others Transistor Replacements Scan PDF
2N6675 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N6675 Others Semiconductor Master Cross Reference Guide Scan PDF
2N6675 Others Shortform Transistor Datasheet Guide Scan PDF
2N6675 New England Semiconductor NPN TO-3 Transistor Scan PDF
2N6675 PPC Products Transistor Short Form Data Scan PDF

2N6675 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N6674

Abstract: 2N6675 2N6689 2N6690
Text: Qualified Level 2N6675 2N6689 JAN JANTX JANTXV 2N6690 MAXIMUM RATINGS Ratings Symbol , Dissipation Operating & Storage Temperature Range PT 2N6674 2N6689 300 450 450 2N6675 2N6690 400 650 650 7.0 5.0 15 2N6674 2N6675 6.0(2) 175 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6689 2N6690 3.0(3) 175 T op; T stg Max. W W 0 -65 to +200 Symbol 2N6674, 2N6675 , noted) Characteristics Symbol Min. 2N6674, 2N6689 2N6675 , 2N6690 V(BR)CEO 300 400


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PDF MIL-PRF-19500/537 2N6674 2N6675 2N6689 2N6690 2N6674 2N6675 2N6689 2N6690
2002 - 2N6689

Abstract: 2N6674 2N6675 2N6690
Text: Qualified Level 2N6675 2N6689 JAN JANTX JANTXV 2N6690 MAXIMUM RATINGS Ratings Symbol , Temperature Range Total Power Dissipation PT Top; Tstg 2N6674 2N6675 2N6689 2N6690 300 400 450 650 450 650 7.0 5.0 15 2N6674 2N6689 2N6675 2N6690 6.0(2) 3.0(3) 175 175 -65 to +200 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6674, 2N6675 TO-3 (TO-204AA)* W W 0 C THERMAL , , 2N6689 2N6675 , 2N6690 V(BR)CEO 300 400 2N6674, 2N6689 2N6675 , 2N6690 ICEX Max. Unit


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PDF MIL-PRF-19500/537 2N6674 2N6675 2N6689 2N6690 2N6674 2N6689 2N6675 2N6690
2005 - 2N6675

Abstract: 2N6674 NPN/2N6675
Text: JMnic Product Specification Silicon NPN Power Transistors 2N6674 2N6675 DESCRIPTION , PARAMETER CONDITIONS 2N6674 VCBO Collector-base voltage 300 Open base 2N6675 VEBO V , 2N6675 VCEO VALUE V 400 Open collector 7 V IC Collector current 15 A IB , Product Specification Silicon NPN Power Transistors 2N6674 2N6675 CHARACTERISTICS Tj=25 unless , voltage MIN TYP. MAX UNIT 300 IC=0.2A ;IB=0 2N6675 V 400 VCEsat


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PDF 2N6674 2N6675 2N6674 2N6675 NPN/2N6675
transformerless

Abstract: 2N6675 transformerless inverter 1N3913 2N6674 "Solenoid Drivers" N6674
Text: SPECIFICATIONS General The 2N6674 and 2N6675 series transistors are high-voltage, high-gain , Modulators. Series 2 N6674, 2N6675 High Voltage NPN Transistors 10 Amperes • 400 Volts FEATURES â , ELECTRONIC DISTRIBUTORS. 300 SERIES 2N6674/ 2N6675 High Voltage Fast Switching NPN Transistors Absolute maximum ratings Description 2N6674 2N6675 Unit Conditions VCBO Collector-Base Voltage 450 650 , characteristics at 25°C (unless otherwise sjpecified) Description 2N6674 2N6675 Unit Conditions


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PDF 2N6674 2N6675 N6674, 2N6675 50/jH 50fjH transformerless transformerless inverter 1N3913 "Solenoid Drivers" N6674
2011 - NPN triple diffused 60V

Abstract: 2n6675 NPN Transistor 10A 70V marking 20A
Text: 2N6674 2N6675 NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6674, 2N6675 types are NPN Silicon Triple Diffused Mesa Power Transistors , 15 20 5.0 175 -65 to +200 1.0 2N6675 650 400 UNITS V V V A A A W °C °C/W ELECTRICAL , Cob VEB=7.0V IC=200mA (2N6674) IC=200mA ( 2N6675 ) IC=10A, IB=2.0A IC=10A, IB=2.0A, TC=100°C IC=15A, IB , ) 2N6674 2N6675 NPN SILICON POWER TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless


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PDF 2N6674 2N6675 2N6674, 10-March NPN triple diffused 60V NPN Transistor 10A 70V marking 20A
2001 - 2N6675

Abstract: 2N6674 2N6689 2N6690
Text: Level 2N6674 JAN JANTX JANTXV 2N6675 2N6689 2N6690 MAXIMUM RATINGS Ratings , ) Operating & Storage Junction Temperature Range Total Power Dissipation PT Top; Tstg 2N6674 2N6675 2N6689 2N6690 300 400 450 650 450 650 7.0 5.0 15 2N6674 2N6689 2N6675 2N6690 6.0(2) 3.0(3) 175 175 -65 to +200 Unit Vdc Vdc Vdc Vdc Adc Adc 2N6674, 2N6675 TO-3 (TO-204AA)* W , ) Characteristics Symbol Min. 2N6674, 2N6689 2N6675 , 2N6690 V(BR)CEO 300 400 2N6674, 2N6689


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PDF MIL-PRF-19500/537 2N6674 2N6675 2N6689 2N6690 2N6674 2N6689 2N6675 2N6690
Not Available

Abstract: No abstract text available
Text: Devices 2N6674 2N6675 2N6689 JAN JANTX JANTXV 2N6690 MAXIMUM RATINGS Ratings Symbol , Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current 2N6674 2N6675 2N6689 2N6690 300 400 450 650 450 650 7.0 5.0 15 2N6674 2N6689 2N6675 2N6690 6.0(2) 3.0(3) 175 175 , Temperature Range Total Power Dissipation Unit Vdc Vdc Vdc Vdc Adc Adc 2N6674, 2N6675 TO-3 (TO , Symbol Min. 2N6674, 2N6689 2N6675 , 2N6690 V(BR)CEO 300 400 2N6674, 2N6689 2N6675


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PDF MIL-PRF-19500/ 2N6674 2N6675 2N6689 2N6690 2N6674 2N6689
RJH6674

Abstract: Harris RJH6675 CA3725 2N6674 2N6675 27e transistor RJh*6674 RJH6675 2N667S l0319
Text: ,* derating curves for 2N6674 and 2N6675. SB 90 79 100 >29 IÇ0 179 200 CASE TEMPERATURE 1TC>-*C 92CS , Power Transistors - LB 2N6674, 2N6675 , RJH6674, RJH6675 HARRIS SEMICOND SECTOR 27E 10 , -2Q4AA TOP VIEW JEDEC TO-218AC 2N6674 2N6675 RJH6674 RJH6675 The 2N6674, 2N6675 , RJH6674, and RJH6675 , specified at 100°C to provide Information necessary for worst-case design. The 2N6674 and 2N6675 , (2N6674, 2N6675 only). 7 10 15 20 5 175 2N6674 450 350 300 2N6675 650 450 400 1 1 _ -65 to 200


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PDF 2N6674, 2N6675, RJH6674, RJH6675 002DG54 O-218AC 2N6674 2N6675 RJH6674 Harris RJH6675 CA3725 2N6675 27e transistor RJh*6674 RJH6675 2N667S l0319
2N6674

Abstract: NPN Transistor 10A 400V 2N6675 300V transistor npn 2a
Text: Voltage: V(BR)CEO= 300V(Min)- 2N6674 = 400V(Min)- 2N6675 APPLICATIONS Designed for high voltage , 2N6674 450 2N6675 VCBO 650 Collector-Base Voltage V w w 2N6674 450 2N6675 VEBO 400 2N6674 VCEX 300 2N6675 VCEO UNIT 650 Collector-Emitter Voltage , MAX UNIT 300 Collector-Emitter Breakdown Voltage IC= 200mA ; IB= 0 2N6675 V 400 , ; IB= 2A 1.5 V 2N6674 VCE= 450V; VBE= -1.5V 0.1 2N6675 VCE= 650V; VBE= -1.5V


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PDF 2N6674/6675 2N6674 2N6675 2N6674 NPN Transistor 10A 400V 2N6675 300V transistor npn 2a
2N6675

Abstract: 2N6674
Text: SavantIC Semiconductor Product Specification 2N6674 2N6675 Silicon NPN Power Transistors , = ) SYMBOL PARAMETER CONDITIONS 2N6674 VCBO 300 Open base 2N6675 VEBO V 650 2N6674 Collector-emitter voltage Emitter-base voltage UNIT 450 Open emitter Collector-base voltage 2N6675 , Product Specification 2N6674 2N6675 Silicon NPN Power Transistors CHARACTERISTICS Tj , sustaining voltage MIN TYP. MAX UNIT 300 V IC=0.2A ;IB=0 400 2N6675 VCEsat


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PDF 2N6674 2N6675 2N6674 2N6675
Q040

Abstract: CA3725 tcv204a GG4U
Text: HARRIS SEMICOND SECTOR SbE D 43G2271 GG4übl4 TflO ¡ H A S 2N6674, 2N6675 , 2N6674 2N6675 »2CS* 27516 Features: Fast sw itch in g speed H igh voltage ratings: V to 450 V Low , inverters S w itch in g regulators JEDEC T0-204AA The 2N6674 and 2N6675 SwitchMax series of silicon , provide information neces sary for worst-case design. The 2N6674 and 2N6675 transistors are supplied in , ). °C 235 °C 1 -65 to 200 1 450 350 300 2N6675 650 450 400 V V V A A Icm


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PDF 43G2271 2N6674 2N6675 T0-204AA 2N6675 2N6674, Q040 CA3725 tcv204a GG4U
2011 - Not Available

Abstract: No abstract text available
Text: NPN High Power Silicon Transistors 2N6674 & 2N6675 Features · · Available in JAN, JANTX, and , Symbol VCEO VCBO VCBX VEBO IB IC PT Top, Tstg 6.0(2) 175 2N6674 300 450 450 7.0 5.0 15 3.0(3) 175 2N6675 , = 200 mAdc 2N6674 2N6675 Collector - Emitter Cutoff Current VCE = 450 Vdc, VBE = -1.5 Vdc VCE = 650 , 450 Vdc 2N6674 2N6674 2N6675 Symbol V(BR)CEO Mimimum 300 400 -Maximum -Units Vdc ICEX 0.1 0.1 , 2N6674 & 2N6675 Electrical Characteristics -con't ON Characteristics (2) Forward Current Transfer Ratio


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PDF 2N6674 2N6675 MIL-PRF-19500/537 O-204AA) 2N6674
2011 - Not Available

Abstract: No abstract text available
Text: NPN High Power Silicon Transistors 2N6674 & 2N6675 Features • Available in JAN, JANTX, and , 2N6675 Units Collector - Emitter Voltage Ratings VCEO 300 400 Vdc Collector - , = -1.5 Vdc 2N6674 2N6675 Emitter - Base Cutoff Current VEB = 7.0 Vdc Collector - Base , Emitter Breakdown Voltage IC = 200 mAdc 2N6674 2N6675 - 2.0 mAdc ICBO - 1.0 mAdc 1 2N6674 & 2N6675 Electrical Characteristics -con’t ON Characteristics (2) Symbol


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PDF 2N6674 2N6675 MIL-PRF-19500/537 O-204AA)
equivalent for transistor tt 2222

Abstract: wn 537 a transistor wn 537 transistor 2N6669 2N6690 D105 ic SL 1626 2N6689 7827 Transistor 2N6675
Text: . FIGURE i. Physical dimension', of transistor types 2N6674 and 2N6675. 13 MIL-S-19500/537(03AF) Symbol , , NPN, SILICON, POWER TYPES 2N6674, 2N6675 , 2N6689, AND 2N6690 JAN, JANTX, ANO JANTXV This , MIL-S-19500. • 1.2 Physical dimensions. See figure 1 (T0-3) - ZH6674, 2.N6675 - See figure 2 (T0 , +200 2N6675 6 175 650 400 7 5 15 -65 to +200 2N6689 3 175 450 300 7 5 15 -65 to +200 2N66S0 3 175 , linearly 34.2 ir.W/°C for TA > 25°C - 2N6674, 2N6675 Derate linearly 17.1 mW/°C for TA > 25°C - 2N6689


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PDF MIL-S-19500/537 2N6674, 2N6675, 2N6689, 2N6690 MIL-S-19500. ZH6674, N6675 T0-61) equivalent for transistor tt 2222 wn 537 a transistor wn 537 transistor 2N6669 D105 ic SL 1626 2N6689 7827 Transistor 2N6675
transistor BC 667

Abstract: TO-8-090 2N 6674 2N6675
Text: 2N6674, 2N6675 File N u m b e r 1164.1 10-A Sw itchM ojr Power Transistors High-Voltage N , IN A L D E S IG N A T IO N S 2N6674 2N6675 »2CS- 2 7 5 I« Features: Fast s w itc h in g speed , 6674 2N6675 650 450 400 V V V V A A A A VcEV V be- -1 .5 V . 450 350 300 VcEx(Clamped , 10 s m a x . *ln accordance w ith JEDEC registration data (2N6674, 2N6675 only). 20 5 175 1 1 W W /°C - -65 to 200 °c 235 2-192 2N6674, 2N6675 E L E C T R IC A L


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PDF 2N6674, 2N6675 2N6674 transistor BC 667 TO-8-090 2N 6674 2N6675
2N6674

Abstract: 2N6675 2N6075 00210
Text: 7^237 002^417 ■)S SCS-THOMSON 2N6674 ^©iLlieraWöOi_ 2N6675 S G S-TH0MS0N 30E D NPN HIGH VOLTAGE POWER TRANSISTORS ■SWITCHING REGULATORS ■INVERTERS ■SOLENOID AND RELAY DRIVERS , Symbol Parameter 2N6674 2N6675 Unit VcEV Collector-emitter Voltage (VBe =-1.5V) 450 650 V VcEX , )* Collector Emitter Sustaining Voltage ic = 0.2A Lc = 25mH for 2N6674 for 2N6675 300 400 V V VcEX(sus)* Collector-emitter Sustaining Voltage lc =? 10A Lc=50nH !b=2A RBb=2Q VBB = — 4V for 2N6674 for 2N6675 350 450 V V


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PDF 2N6674 2N6675 2N6674 2N6675 71BR537 2N6674-2N6675 2N6075 00210
Not Available

Abstract: No abstract text available
Text: ; ?-V¿ . .-f' 2N6674 2N6675 -• í í S K S í * % í m " í i : 'í f t í f e V-:  , . The 2N 6674 and 2N6675 series transistors are high-voltage, high-gain, NPN, 10 ampere , € ~ '3 . 5 T itn s^ so -I * S oooow i SERIES 2N6674/ 2N6675 High Voltage Fast , _ 2N6675 650 400 450 Unit Volts Volts Volts A A A A W A A 15 20 5 10 175 , Series 2N6674/ 2N6675 RESISTIVE SWITCHING PERFORMANCE INDUCTIVE SWITCHING PERFORMANCE Figure 4


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PDF 2N6674 2N6675
BUW41B

Abstract: BUW41 2N6771 2N6675 2N6686 2N6687 2N6676 2N6674 2N6671 npn 1000V 100a
Text: €” 2N6772* 2N6672 _ 2N6675 2N6677 _ — 560V BUW40A" 2N6739* — — — — — - BUW41A* - - - — — 2N6773* 2N6673 _ 2N6675 2N6678 _ 650V BUW40B* 2N6740* — — — — — - BUW41B* - - - - â , TO-3 2N6677 15 550 350 8 15 3 1 15 3 175 TO-3 2N6676 15 450 300 8 15 3 1 15 3 175 TO-3 2N6675 10


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PDF 2N6686 2N6687 2N6688 2N6771* 2N6671 2N6674 2N6676 BUW40* 2N6738* BUW41* BUW41B BUW41 2N6771 2N6675 2N6686 2N6687 2N6676 2N6671 npn 1000V 100a
TLP 527

Abstract: TLP-531 transistor TIP 350 2N6676 ST555 IR5065 ST-550 TLP 535 IR5066 transistor ir5252
Text: 8.0 1.0 1.5 10 500 15 TO-3 2N6675 2N6675 175 650 400 650 .10 10 8.0 1.0 1.5 10 500 15 TO-3 2N6676


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PDF T-53--0/ 2N6672 2N6673 2N6674 2N6675 2N6676 TLP 527 TLP-531 transistor TIP 350 ST555 IR5065 ST-550 TLP 535 IR5066 transistor ir5252
Not Available

Abstract: No abstract text available
Text: 2N6675+JANTX Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.8.0 h(FE) Max. Current gain.20 @I(C) (A) (Test Condition)10 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq15M @I(C) (A) (Test Condition) @V(CE) (V) (Test


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PDF 2N6675 Freq15M time600n
buw34

Abstract: BUW35 2N6675 BDW52 buw44 BU208A BDW51A bdx85 2N6674 BUX80
Text: Power Transistors TO-3 Case (Continued) type no. •c Pd bvcbo bvceo hfe typ eie vce(sat) @'c *r «typ (A) 2N6675 15 175 450 400 8.0 20 . 5.0 15 15 BDW51 BDW52 15 125 45 45 20 150 5.0 3.0 10 3.0 BDW51A BDW52A 15 125 60 60 20 150 5.0 3.0 10 3.0 BDW51B BDW52B 15 125 80 80 20 150 5.0 3.0 10 3.0 BDW51C BDW52C 15 125 100 100 20 150 5.0 3.0 10 3.0 bdx85 bdx86 10 100


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PDF 2N6674 2N6675 BDW51 BDW52 BDW51A BDW52A BDW51B BDW52B BDW51C BDW52C buw34 BUW35 2N6675 buw44 BU208A bdx85 2N6674 BUX80
2002 - Not Available

Abstract: No abstract text available
Text: 2N6675 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar NPN Device. VCEO = 400V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 15A All Semelab hermetically sealed products can


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PDF 2N6675 O204AA) 18-Jun-02
Not Available

Abstract: No abstract text available
Text: 2N6675+JANTXV Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)400 V(BR)CBO (V)650 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.8.0 h(FE) Max. Current gain.20 @I(C) (A) (Test Condition)10 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq15M @I(C) (A) (Test Condition) @V(CE) (V) (Test


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PDF 2N6675 Freq15M time600n
2002 - 2N6675

Abstract: No abstract text available
Text: 2N6675 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. Bipolar NPN Device. VCEO = 400V 3 (case) 3.84 (0.151) 4.09 (0.161) IC = 15A 7.92 (0.312) 12.70 (0.50) All Semelab


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PDF 2N6675 O204AA) 31-Jul-02 2N6675
5609 transistor

Abstract: transistor 5609 5609 2N6675 5609 t transistor 2N6674 CCC6675
Text: : 2N6674 2N6675 Electrical Characteristics At 25°C The chip is 100% probed to the conditions and limits


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PDF CCC6675 emitter-15-mil thickness-18 2N6674 2N6675 CONhickness-18 5609 transistor transistor 5609 5609 2N6675 5609 t transistor CCC6675
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