2N6671 Search Results

2N6673

Abstract: 2N6671 2N6672
Contextual Info: SavantIC Semiconductor Product Specification 2N6671 2N6672 2N6673 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low saturation voltage ·Fast switching speed ·High voltage ratings APPLICATIONS ·Off-line power supplies ·High-voltage inverters

BC140-16

Abstract: T053 BC109C NPN BC108A BC107A bc108 IC hr 2N6589 2N6590 2N6609 2N6653
Contextual Info: MAE D • 0133187 0 0 0 D M4 5 SEM ELABE G31 I S ML B SEMELAB LTD BI-POLAR TRANSISTO RS CECC AND HIGH REL & HIGH ENERGY Rel Code 2N6589 2N6590 2N6594 2N6609 2N6653 2N6654 2N6655 2N6671 2N6672 2N6673 2N6674 2N6675 2N6676 2N6677 2N6678 2N6686 2N6687 2N6688

Contextual Info: 2N6671 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 2N6671+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)450 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N6671

Abstract: 2N6673 2N6672
Contextual Info: JMnic Product Specification 2N6671 2N6672 2N6673 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low saturation voltage ・Fast switching speed ・High voltage ratings APPLICATIONS ・Off-line power supplies ・High-voltage inverters ・Switching regulators

2N6671

Abstract: 2N6673 2N6672
Contextual Info: Inchange Semiconductor Product Specification 2N6671 2N6672 2N6673 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low saturation voltage ・Fast switching speed ・High voltage ratings APPLICATIONS ・Off-line power supplies ・High-voltage inverters

Contextual Info: 2N6671+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)450 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N6671

Contextual Info: 2N6671 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 7121237 0G2im3 i • T -3 3 -Î3 f Z 7 SCS-THOMSON jyiqpMKgi_ 2N6671/72/73 ^ 7 # _ C S G S-THOMSON 3QE D NPN HIGH VOLTAGE POWER TRANSISTORS ■ . ■ ■ ■ SWITCHING REGULATORS INVERTERS SOLENOID AND RELAY DRIVERS MOTOR CONTROLS DEFLECTION CIRCUITS

tc 3086

Abstract: 2N6671 2N6672 2N6673 RCA8767 RCA8767A RCA8767B 2N6672 RCA transistor JE 1090 HFP 1912
Contextual Info: E SOLID STATE OIE D • 3075001 D017G1G Y "3Ò 7 ■ S w ftc à M a * Power 2N6671, 2N6672, 2N6673 File Number 1090 5-A SwitchM aX Power Transistors High-Voltage N-P-N Types for Off-Line

Contextual Info: 2N6671, 2N6672, 2N6673 File Number 1090 5-A Sw itchM aX Power Transistors H igh-Voltage N -P -N Types for O ff-Line Power Supplies and O ther High-Voltage Sw itching Applications T E R M IN A L D E S IG N A T IO N S Features: H igh-tem perature param eters guaranteed

23487

Abstract: 2N60G3 23472
Contextual Info: Microsemi NPN Transistors Part Number 2N5039 JAN2N5039 JANS2N5039 JANTX2N5039 JANTXV2N5039 2N5038 2N5330 JAN2N5038 JANS2N5038 JANTX2N5038 JANTXV2N5038 2N5672 2N6033 2N6032 2N5758 2N5759 2N5760 2N6671 2N6672 2N6673 2N6835 2N5877 2N5878 2N5632 2N5633 2N5634

Contextual Info: 2N6671+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)300 V(BR)CBO (V)450 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u¶ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2n6673

Abstract: 2n6671 RCA8767
Contextual Info: 7=35 ~ / 9 2N6671, 2N6672, 2N6673 HARRIS SEMICON] SECTOR File Number Sb E D 1090 43 D2 271 GOMObOfl 7fl7 « H A S 5-A SwitchM a* Power Transistors T -3 3 -3 1 High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications

2N6671

Contextual Info: General ^ Semiconductor Industries, Inc. V tw itch P/tft HIGH POWER NPN 2N6671 2N6672 2N6673 TRANSISTORS NPN 300, 350, 400V 8 AMP SW IT C H IN G tf — 250ns TYPICAL The 2N6673 series of NPN silicon transistors is designed fo r high speed sw itching systems. This unique series features General S em iconductor Industries' C2R®

Contextual Info: 2N6671 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

T053

Abstract: hirel 2N6676
Contextual Info: SEMELAB LTD 8133167 0GGG030 □ • S M L B 37E » T rVjúm TVpe No. Reliability Polarity Option 2N6654 2N6655 2N6671 2N6672 2N6673 SCREEN SCREEN SCREEN SCREEN SCREEN NPN NPN NPN NPN NPN TO 3 T03 TO 3 T03 TO 3 350 400 300 350 400 20 20 2N6674 2N6675 2N6676

IC 8030

Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
Contextual Info: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3

npn 100w

Abstract: BUW41 BUW41A BUX31B THOMSON DISTRIBUTOR 58e d 2N6542 2N6544 2N6671 2N6672 2N6673
Contextual Info: TH OM SO N/ D I S T R I B U T O R SflE D Bipolar Power Transistors High-Voltage • []0[1573D SOI ■ V c E s a t -V 250 300 300 300 3 25 3 50 400 4 00 4 00 300 □ 65 0 65 0 45 0 4 00 □ 550 650 450□ 450 □ 2 N 6 6 7 8 S w itch M a x FAM ILY (n -p -n )

Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. •c (A) NPN PNP Pd (W) bvceo (V) (V) hFE 8 lc »TYP (A) VCE(SAT) @ic (V) (A) MAX h *TYP (MHZ) MIN MIN MIN MAX 10 125 110 100 20 100 5.0 3.5 10 4.0 2N6249 10 175 300 200 10 50 10 1.5 10 2.5 2N6250 10 175 375

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V

TRANSISTOR C 6090 npn

Abstract: RCA Power Transistor TO-3 4 225 TRANSISTOR C 6090 2n6675 rca pnp transistor beta values 2N62* rca to3 transistor 6090 audio output TRANSISTOR NPN driver transistor hfe 60-100 2N5415
Contextual Info: lc sat Features •Excellent switching performance at high volt­ age and current (to 650 V V q e v . 15 A lc(sat) •100% testing of switching parameters, in­ cluding turn-off time and saturation voltage, at Tc=:25°C and T q > 100 °C to provide limit values for worst-case design

BUW41B

Abstract: BUW41 2N6771 2N6686 2N6675 BUX31B npn 1000V 100a 2N6671 2N6674 2N6676
Contextual Info: MAXIVOLT SERIES H IGH V O L T A G E /H IG H C U R R E N T S W IT C H IN G T R A N S IS T O R S M AXIVO LT - A series of power transistors fully designed for high voltage switching application. M A X IV O L T S E LE C T O R C H A R T 1A 5A 5A 10A 15A 20A 25A