BUX43 Search Results

BUX43

Contextual Info: SGS-THOMSON IMIBCB lllLieTB©C80e8 S G S - T HO MS ON BUX43 30E D HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUX43 is a silicon multiepitaxiai mesa NPN transistor in Jedec TO-3 metal case, intented for high voltage, fast switching applications. TO -3 ABSOLUTE MAXIMUM RATINGS

bux43

Contextual Info: BUX43 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUX43

Abstract: A3931 s35j
Contextual Info: MOTOROLA r SC -CXSTRS/R 6367254 F> MOTOROLA SC Tb CXSTRS/R F DE | t , 3 b 7 5 5 M 0 0 f l 0 f l 7 4 96D 80874 T - 33-/3 MOTOROLA BUX43 SEM ICONDUCTOR TECHNICAL DATA 10 AM PERES s w it c h m o d e a s e r i e s NPN SILICO N POWER TRA N SISTO R NPN SILICON

Contextual Info: CRIMSON SEM ICO ND UC TO R INC TT ^2514096 CRIMSON SEMIC O N D U C T O R INC J 99D 00339 D dF | ESmOTb . . I P Cf h ~ 0 / M U LTIEPITAXIAL H.V. M E S A AND B IP L A N A R '- TO-3 continued V«o Vcio (V) (V) NPN BUW44 BUW45 BUW46 BUX13 BUX14 BUX43 BUX44 BUX46

bux43

Contextual Info: MOTOROLA Í SC -CXSTRS/R 6367254 F> MOTOROLA SC « DE | t . 3 b ? S 5 4 CXSTRS/R F 96D 8 0 8 7 4 OOf l Of l VM D T-33-/3 MOTOROLA BUX43 SEMICONDUCTOR TECHNICAL DATA 10 AMPERES s w it c h m o d e a s e r i e s NPN SILICON POWER TRAN SISTO R NPN SILICON POWER

Contextual Info: BUX43 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUX51

Abstract: NPN BUX51 BUX49 BUV18S cv10253 BUX43 BUX50 BUX52 BUX53 BUX54
Contextual Info: iS E M E L A B /ff- VI 0- MAiyyFACTuniiyGzd ' c Polarity Package v CEO conl /BUX42 BUX43 BUX49 BUX50 BUX51 NPN NPN NPN NPN NPN T03 T03 T039 TO39 T039 250 325 90 125 200 12 10 3.5 3.5 3.5 15-45 15-60 20-60 20« 20-60 4 4 4 4 4 1.5 1 BUX52 BUX53 BUX54 BUX59

bux43

Contextual Info: SG S -TH O M SO N BUX43 ;U HIGH VOLTAGE POWER SWITCH D E S C R IP T IO N The BUX43 is a silicon multiepitaxial mesa NPN transistor in Jedec TO-3 metal case, intented for high voltage, fast switching applications. TO-3 A B S O L U T E M A X IM U M R A T IN G S

BUX43

Contextual Info: BUX43 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUX69

Abstract: BUX23 BUX37 BUX55 BUX25 BUX80 BUX24 BUX26 BUX27 BUX28
Contextual Info: 0133107 DDDDMSb T17 • SMLB MAE D SEMELABI SEMELAB BUX23 BUX24 BUX25 BUX26 BUX27 BUX28 BUX29 BUX34 BUX348 BUX348A BUX348APF BUX348CPF BUX348PF BUX37 BUX39 BUX40 BUX41 BUX41N BUX42 BUX43 BUX44 BUX45 BUX46 BUX47 BUX47A BUX48 BUX48A BUX49 BUX50 BUX51 BUX52 BUX53

npn 100w

Abstract: BUW41 BUW41A BUX31B THOMSON DISTRIBUTOR 58e d 2N6542 2N6544 2N6671 2N6672 2N6673
Contextual Info: TH OM SO N/ D I S T R I B U T O R SflE D Bipolar Power Transistors High-Voltage • []0[1573D SOI ■ V c E s a t -V 250 300 300 300 3 25 3 50 400 4 00 4 00 300 □ 65 0 65 0 45 0 4 00 □ 550 650 450□ 450 □ 2 N 6 6 7 8 S w itch M a x FAM ILY (n -p -n )

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

pmd10K80

Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.