2N6617 Search Results

Contextual Info: HEIjJLETT-PACKARDn CMPNTS 2DE D H 44475Ö4 OOQSSSfl 4 E9 T - Low N oise Transistors HXTR-6001 Chip * 2N6617 HXTR-6101, TX Technical Data 2N6742 ( h x t r - 6102, t x and TXV 2N6618 (HXTR-6103, TX and TXV) 2N6743 (HXTR-6104, TX and TXV) Features D escription

2N6617

Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101
Contextual Info: COMPONENTS Features 2JÏ8 ¡0.078 1.57l0.062"f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions

Hewlett-Packard application note 967

Abstract: HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor
Contextual Info: COMPONENTS Features 2 JÏ8 ¡0.078 1.5 7 l0 .0 6 2 " f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions

2N6743

Abstract: HXTR-6104 2N6618 2N6743TX 2N6742 2N6617 HXTR-6001 HXTR-6103TX hxtr 6101 transistor HXTR-6101
Contextual Info: H E W L E T T - P A C K A R D n CMPNTS 2GE D B 44 475Ö4 OOGSSSfl 4 a T - 31-/9 L ow N o ise T ran sistors HXTR-6001 C hip 2N6617 HXTR-6101, I X and TXV 2N6742 (HXTR-6102, TX and TXV) 2N6618 (HXTR-6103, TX and TXV) 2N6743 (HXTR-6104, TX and TXV) Technical D ata

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

2N661

Abstract: 2n6617
Contextual Info: MAXIMUM RATINGS 2N6516 Rating NPN 2N6517 Symbol 2N6515 2N6519 2N6520 U n it C o lle ctor-E m itte r V olta g e VCEO 250 300 350 V dc C o lle cto r-B ase V olta g e CCBO 250 300 350 Vdc Em itte r-B a se V olta g e 2N6515, 2N6516. 2N6517 2N6519, 2N6520 Veb o

2N6805

Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog