2N5583 Search Results

2N5583

Contextual Info: 2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications. PACKAGE STYLE MAXIMUM RATINGS IC 500 mA VCE -30 V PDISS 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C TJ -65 °C to +200 °C

2n5583

Contextual Info: 2N5583 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

Contextual Info: 2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications. PACKAGE STYLE TO-39 MAXIMUM RATINGS IC 500 mA VCE -30 V PDISS 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C TJ

Contextual Info: 2N5583 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

2N5583

Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N5583 Silicon Epitaxial-Planar Bipolar MW NPN transistor Package Type: TO-39 ABSOLUTE IVAXIMUM RATINGS TCASE = 25°C SYMBOL Rating Collector-Emitter Voltage REB=10Q VcER Collector-Base Voltage VcBO Emitter-Base Voltage ^EBO

Contextual Info: zSztni-Conduakoi Lpi , Jna. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Dimensions in mm (inches).

2N5583

Contextual Info: 2N5583 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • High Voltage Switching • High Frequency Amplifier Applications 0.89 max. (0.035)

HA20

Abstract: MXR5583
Contextual Info: M O T O R O L A SC ÍXSTRS/R F} 6 3 6 7 2 5 4 MOTOROLA SC "ñT X S T R S / R F DE Jb3L.72S4 00714^0 7 89D 79460 V ' F ' Z ! — 2 -2 MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MXR5583 Die Source Sam e as 2N5583 HIGH FREQUENCY RF TRANSISTOR PNP SILICON M AXIM UM RATINGS

2n5583

Abstract: lm3909
Contextual Info: 2N5583 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrated Circuits and Semiconductors — Product Line 1 of 1 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ|

2N5583

Abstract: TO39 package
Contextual Info: 2N5583 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021)

2N5583

Abstract: 72s4 MXR5583 25CC
Contextual Info: MOTOROLA SC íXSTRS/R F> ñT 6 3 6 7 2 5 4 MOTOROLA SC X S T R S /R F DE |b3ti7254 007^4^0 7 V'p-Zl — Z 3 89D 7 9 4 6 0 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MXR5583 Die S ource Sam e as 2N5583 HIGH FREQUENCY RF TRANSISTOR P N P S IL I C O N M A X IM U M R A T IN G S

2N5583

Abstract: T0750
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5583 The RF Line 1C = -5 0 0 m A HIGH FREQUENCY TRANSISTOR PNP SILICON HIGH FREQUENCY TRANSISTOR P N P S IL IC O N . . d e sign e d for applications in high frequency am plifiers and non-saturated sw itch ing circuits. H igh gain-b an dw id th product

MRF5583

Contextual Info: MRF521 IL See MRF521 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF5583 The RF Line DIE SOURCE SAME AS 2N5583 P N P S ilic o n H igh F re q u e n cy T ra n s is to r IC = —500 m A SURFACE MOUNT HIGH FREQUENCY TRANSISTOR PNP SILICON . . . d e s ig n e d fo r a m p lifie r, o s c illa t o r o r f r e q u e n c y m u ltip lie r a p p lic a t io n s in in d u s tria l

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MRF965

Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

2N5109 motorola

Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­

2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

2N5109 motorola

Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­