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    2n5583 Datasheets

    2n5583 datasheet (13)

    Part ECAD Model Manufacturer Description Type PDF
    2N5583 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=30 / Ic=0.5 / Hfe=25/100 / fT(Hz)=- / Pwr(W)=5 Original PDF
    2N5583 Great American Electronics Silicon Epitaxial-Planar Bipolar MW NPN transistor Scan PDF
    2N5583 Motorola The European Selection Data Book 1976 Scan PDF
    2N5583 Motorola European Master Selection Guide 1986 Scan PDF
    2N5583 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
    2N5583 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2N5583 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5583 Unknown Shortform Transistor Datasheet Guide Scan PDF
    2N5583 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5583 Unknown Shortform Transistor PDF Datasheet Scan PDF
    2N5583 Unknown Transistor Replacements Scan PDF
    2N5583 Unknown Transistor Replacements Scan PDF
    2N5583LP Semelab Screening Options Available =, Polarity = PNP, Package = TO39 (TO205AD), Vceo = 30V, IC(cont) = 0.5A, HFE(min) = 25, HFE(max) = 100, @ Vce/ic =V / 0mA, FT = -, PD = 5W Original PDF
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    Solid State Devices Inc (SSDI) 2N5583

    PNP SIL RF TO39
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    DigiKey 2N5583 Box 50 5
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    Bristol Electronics 2N5583 354 1
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    Central Semiconductor Corp CP618-2N5583-WN

    RF TRANSISTOR TO-39
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    Motorola Mobility LLC 2N5583

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    GENERIC 2N5583

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    2n5583 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOTOROLA 2N5179

    Abstract: 2N5160 BFR96 MM4049 MRF531 BFR90 MOTOROLA MRF911 2N4957 2N5032 2N5583
    Text: 2N6304 2N5583 2N5943 2N5583 2N5109 2N5837 PNP NPN 1.2 2N4957 2N4959 2N2857 2N6305 2N6305 2N5583 2 N 5943 2N5583 2N5109 2N 5583 PNP NPN 1.0 2N5179 2N5179 2N2857 2N5583 2N5943 2N5160 MM8001 2N5160 2N5108 2N5583 PNP NPN 0.8 MRF502 MRF502 MRF502 2N5160 2N3866 2N5160 2N3866 2N5160 2N4428 2N5583 PNP NPN 0.6 MRF501


    OCR Scan     		PDF 2N5829 2N5031 MRF904 2N4957 2N5032 MOTOROLA 2N5179 2N5160 BFR96 MM4049 MRF531 BFR90 MOTOROLA MRF911 2N5583

    uhf amplifier design BFR90

    Abstract: 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91
    Text: 2N6304 2N5583 2N5943 2N5583 2N5109 2N5837 PNP NPN 1.2 2N4957 2N4959 2N2857 2N6305 2N6305 2N5583 2 N 5943 2N5583 2N5109 2N 5583 PNP NPN 1.0 2N5179 2N5179 2N2857 2N5583 2N5943 2N5160 MM8001 2N5160 2N5108 2N5583 PNP NPN 0.8 MRF502 MRF502 MRF502 2N5160 2N3866 2N5160 2N3866 2N5160 2N4428 2N5583 PNP NPN 0.6 MRF501


    OCR Scan     		PDF 2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 uhf amplifier design BFR90 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91

    BFR90 transistor

    Abstract: 2n5583 mrf502 transistor 2N5160 MRF531 transistor bfr96 BFR91 BFR91 transistor 2N3866 2N5032
    Text: 2N6304 2N5583 2N5943 2N5583 2N5109 2N5837 PNP NPN 1.2 2N4957 2N4959 2N2857 2N6305 2N6305 2N5583 2 N 5943 2N5583 2N5109 2N 5583 PNP NPN 1.0 2N5179 2N5179 2N2857 2N5583 2N5943 2N5160 MM8001 2N5160 2N5108 2N5583 PNP NPN 0.8 MRF502 MRF502 MRF502 2N5160 2N3866 2N5160 2N3866 2N5160 2N4428 2N5583 PNP NPN 0.6 MRF501


    OCR Scan     		PDF 2N3866 2N3553 2N5641 144B-04 45A-07 2N5643 2N6166 MRF509 07A-01 BFR90 transistor 2n5583 mrf502 transistor 2N5160 MRF531 transistor bfr96 BFR91 BFR91 transistor 2N5032

    2N5160

    Abstract: 2N5583 MRF531 2n3866 noise BFR96 MFR901 BFR90 amplifier 2N5032 2N5943 BFR90
    Text: 2N6304 2N5583 2N5943 2N5583 2N5109 2N5837 PNP NPN 1.2 2N4957 2N4959 2N2857 2N6305 2N6305 2N5583 2 N 5943 2N5583 2N5109 2N 5583 PNP NPN 1.0 2N5179 2N5179 2N2857 2N5583 2N5943 2N5160 MM8001 2N5160 2N5108 2N5583 PNP NPN 0.8 MRF502 MRF502 MRF502 2N5160 2N3866 2N5160 2N3866 2N5160 2N4428 2N5583 PNP NPN 0.6 MRF501


    OCR Scan     		PDF 2N5829 2N5031 MRF904 2N4957 2N5032 2N5160 2N5583 MRF531 2n3866 noise BFR96 MFR901 BFR90 amplifier 2N5943 BFR90

    2004 - 2n5583

    Abstract: lm3909
    Text: 2N5583 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrated , /?ss_pn= 2N5583 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Category » Transistors Buy 2N5583 at our online store! 2N5583 Availability Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N5583 Information Did you Know. AMS is a leading manufacturer of


    Original     		PDF 2N5583 2N5583 LM3909 LM3909N 1N4510 500ns)

    2N5109 motorola

    Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
    Text: combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , * — TO-72 2N5943 50/15 1200 5.5* TO-39 2N5583 * 50/10 1000 8.0* TO-39 2N5836 50/6.0 2000 6.0


    OCR Scan     		PDF 17A-01 05A-01 MRF587 44A-01 2N3959 2N3960 2N5835 MM4049* MRF914 2N5943 2N5109 motorola BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A

    2002 - 2N5583

    Abstract: No abstract text available
    Text: 2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications. PACKAGE STYLE MAXIMUM RATINGS IC VCE PDISS TJ TSTG JC 500 mA -30 V 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 350 °C/W CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE IC = 10 mA IC = 10 µA TC = 25 °C NONE TEST CONDITIONS MINIMUM -30 -30 -3.0 TYPICAL MAXIMUM UNITS V V V IC =


    Original     		PDF 2N5583 2N5583

    2005 - 2N5583

    Abstract: No abstract text available
    Text: 2N5583 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) PNP SILICON TRANSISTOR 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) · High Voltage Switching 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 12.70 (0.500) min. · High Frequency Amplifier Applications · Hermetic TO39 Package 5.08 (0.200) typ. APPLICATIONS: 2 1 0.74 (0.029) 1.14 (0.045) 0.71 , : http://www.semelab.co.uk Document Number 6376 Issue 1 2N5583 ELECTRICAL CHARACTERISTICS (TA =


    Original     		PDF 2N5583 O-205AD) -150mA 2N5583

    2002 - Not Available

    Abstract: No abstract text available
    Text: 2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications. PACKAGE STYLE TO-39 MAXIMUM RATINGS IC 500 mA VCE -30 V PDISS 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 350 °C/W CHARACTERISTICS 1 = Emitter, 2 = Base, 3 = Collector NONE TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL


    Original     		PDF 2N5583 2N5583

    2N5583

    Abstract: T0750
    Text: MOTOROLA TECHNICAL DATA SEMICONDUCTOR 2N5583 The RF Line 1C = -5 0 0 m A HIGH FREQUENCY TRANSISTOR PNP SILICON HIGH FREQUENCY TRANSISTOR P N P S IL IC O N . . d e sign e d for , j j ' j ] 1 C A SE 79 04 TO-205AD (TO-39) M O TO RO LA RF D E V IC E DATA 2 -6 0 2N5583 , DATA 2-61 2N5583 FIGURE 1 - DC CU RREN T G A IN FIG URE 2 - CO LLECTO R SA TU RA TIO N REG , R C U R R E N T Im A) MO TO RO LA RF D E V IC E DATA 2-62 2N5583 FIG URE 7 - C U RRE N T


    OCR Scan     		PDF 2N5583 RF5583HXV 2N5583 T0750

    2n5835

    Abstract: 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF502 MRF965 low noise transistor cross motorola 2N3866 2n5160
    Text: combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , * — TO-72 2N5943 50/15 1200 5.5* TO-39 2N5583 * 50/10 1000 8.0* TO-39 2N5836 50/6.0 2000 6.0


    OCR Scan     		PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 2n5835 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF965 low noise transistor cross motorola 2N3866 2n5160

    2N5109 motorola

    Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
    Text: combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , * — TO-72 2N5943 50/15 1200 5.5* TO-39 2N5583 * 50/10 1000 8.0* TO-39 2N5836 50/6.0 2000 6.0


    OCR Scan     		PDF 17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 2N5109 motorola MRF536 BFR90 application MRF931 MRF586 244A-01 MRF961 mrf517 2N5943

    MRF965

    Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
    Text: combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , -72 MM4049* 20/5.0 4000 15 TO-72 MRF914 20/10 4500* — TO-72 2N5943 50/15 1200 5.5* TO-39 2N5583 * 50/10


    OCR Scan     		PDF 17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 MRF965 2N5109 motorola motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866

    2N5583

    Abstract: No abstract text available
    Text: GAE GREAT AMERICAN ELECTROINCS 2N5583 Silicon Epitaxial-Planar Bipolar MW NPN transistor Package Type: TO-39 ABSOLUTE IV AXIMUM RATINGS (TCASE = 25°C) SYMBOL Rating VALUE UNIT VcER Collector-Emitter Voltage REB=10Q 30 Vdc VcBO Collector-Base Voltage 30 Vdc VEBO Emitter-Base Voltage 5 Vdc lc Collector Current-Continuous Ta=-60.+70°C Ta=+125°C 0.5 0.3 Ade 'cm Pulse Collector Current Q < 10 and t < 10MC 1.0 A P«o, Total Device Dissipation Ta=-60.+25°C Ta=+125°C 4 0.8 W Tj Junction


    OCR Scan     		PDF 2N5583 30Vdc 100mA 100mA, 300MHz 150mAdc, 15mAdc 00000I3 2N5583

    900 mhz oscillator using bfr91 transistor

    Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
    Text: combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583 , * — TO-72 2N5943 50/15 1200 5.5* TO-39 2N5583 * 50/10 1000 8.0* TO-39 2N5836 50/6.0 2000 6.0


    OCR Scan     		PDF 17A-01 05A-01 mrf559 mrf581 mrf837 mrf8372 mrf838/a 305a-01 mrf557 317d-01 900 mhz oscillator using bfr91 transistor Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237

    317A-01

    Abstract: 2N5583 MRF965 2N5109 motorola 2N5943 244A-01 MRF962 MRF586 BFR90 application BFR91
    Text: * — TO-72 2N5943 50/15 1200 5.5* TO-39 2N5583 * 50/10 1000 8.0* TO-39 2N5836 50/6.0 2000 6.0


    OCR Scan     		PDF MRF501 MRF502 2N5179 BFY90 BFX89 MRF587 44A-01 2N3959 2N3960 2N5835 317A-01 2N5583 MRF965 2N5109 motorola 2N5943 244A-01 MRF962 MRF586 BFR90 application BFR91

    2N5583

    Abstract: MRF558
    Text: EVICE DATA 2-60 " F 3 I-3 3 2N5583 HOTOROLA SC ( XSTRS/R F) 4bE D b3b72S4 OOSMOflB 1 MOTb ·E , a -D -c I i s o UJ o I S I *¡J o -J cr & {j 2N5583 MOTOROLA


    OCR Scan     		PDF MIL-S-19500 MRFS583HX, MRF5583HXV 2N5583 b3b72S4 MRF558

    2002 - 2N5583

    Abstract: TO39 package
    Text: 2N5583 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 30V 0.41 (0.016) 0.53 (0.021) dia. IC = 0.5A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications


    Original     		PDF 2N5583 O205AD) 1-Aug-02 2N5583 TO39 package

    2002 - Not Available

    Abstract: No abstract text available
    Text: 2N5583 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 30V 5.08 (0.200) typ. IC = 0.5A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


    Original     		PDF 2N5583 O205AD) 17-Jul-02

    Not Available

    Abstract: No abstract text available
    Text: zSztni-Conduakoi Lpi , (Jna. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5583 PNP SILICON HIGH FREQUENCY TRANSISTOR Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Dimensions in mm (inches). 0.51 ID.? 9.40 (0.37) 7.75 d 3 B.51 (0.335) MAXIMUM RATINGS Ic 500mA VCE -30V G.tO (U.240J 6,60 (0 !«) 1 . 0 W @ T A = 25°C PDISS (2.70 5.0 W @ Tc = 25 °C Tj


    Original     		PDF 2N5583 500mA 10fiA 100mA 150mA

    2002 - 2n5583

    Abstract: No abstract text available
    Text: 2N5583 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 30V 5.08 (0.200) typ. IC = 0.5A 2.54 (0.100) 2 1 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 3 All Semelab hermetically sealed products can be processed in accordance with the requirements of BS


    Original     		PDF 2N5583 O205AD) 19-Jun-02 2n5583

    2n4427 MOTOROLA

    Abstract: MRF536 motorola 2N4427 Y parameters of transistors 2N3948 mrf901 2n5160 MRF586 BFY90 MOTOROLA 2N5583
    Text: combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583


    OCR Scan     		PDF 17A-01 05A-01 2N3866, 2N3866A 2N5160, MM4018, 2N3948, 2N4427, MRF207 2N5109, 2n4427 MOTOROLA MRF536 motorola 2N4427 Y parameters of transistors 2N3948 mrf901 2n5160 MRF586 BFY90 MOTOROLA 2N5583

    2n5583

    Abstract: No abstract text available
    Text: MOTOROLA SC -CDIODES/OPTO} 34 DE~| LBbVESS DOBfiDtO = ] |~~ t 6367255 MOTOROLA SC CDIODES/OPTO) 34C 38060 D SILICON RF TRANSISTOR DICE (continued) T " -3 7 " DIE NO. - PNP LINE SOURCE - RF502.59 This die provides performance equal to or better than that of the following device types: 2N5583 2C5583 High-frequency low-to-medium power PNP transistor designed for clftss A, B and C amplifiers, oscillators, mixers, multipliers and high-speed switches in the 1-1000 MHz


    OCR Scan     		PDF RF502 2N5583 2C5583 0V/100 2n5583

    2N5583

    Abstract: 72s4 MXR5583 25CC
    Text: MOTOROLA SC ÍXSTRS/R F> 6367254 MOTOROLA SC (XSTRS/R F) "ñT DE |b3t,72S4 DG7=mtG 7 69D 79460 VT^Z 1—2-2 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MXR5583 Die Source Same as 2N5583 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage VCBO 30 V Emitter-Base Voltage Vebo 3.0 V Collector Current — Continuous 'C 500 mA Operating and Storage Junction Temperature Range Tj, Tstg -55 to +150 X HIGH FREQUENCY RF TRANSISTOR PNP SILICON THERMAL CHARACTERISTICS


    OCR Scan     		PDF MXR5583 2N5583 2N5583 72s4 MXR5583 25CC

    MOTOROLA SELECTION mrf237

    Abstract: Motorola transistors MRF630 MRF515 2N3948 MRF604 MRF630 MOTOROLA 2N3553 motorola mrf237 MOTOROLA Transistor MRF630 motorola MRF515
    Text: combinations. 1 2N3866, 2N3866A 2 2N5160, MM4018, PNP 3 2N3948, 2N4427, MRF207 4 2N5109, 2N5943 5 2N5583


    OCR Scan     		PDF 17A-01 05A-01 MRF237* MRF207 MRF227* MRF525* 2N3866 2N5160f MRF313 05A-1 MOTOROLA SELECTION mrf237 Motorola transistors MRF630 MRF515 2N3948 MRF604 MRF630 MOTOROLA 2N3553 motorola mrf237 MOTOROLA Transistor MRF630 motorola MRF515

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