2N3960 Search Results

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr o% #f 1 I Ic ^88888 l Data S heet No. 2N 3960 $ id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N3960 Type 2N3960 G eom etry 0003 Polarity NPN Qual Level: JAN - JA NTXV

Contextual Info: 2N3960UB Qualified Levels: JAN, JANTX, AND JANTXV NPN Silicon Switching Transistor Compliant Qualified per MIL-PRF-19500/399 DESCRIPTION This 2N3960UB epitaxial planar transistor is military qualified up to the JANTXV level for highreliability applications. It features a low profile ceramic UB package. This device is also

2N3960

Abstract: CF5076
Contextual Info: Data Sheet No. 2N3960 Type 2N3960 Geometry 0003 Polarity NPN Qual Level: JAN - JANTXV Generic Part Number: 2N3960 REF: MIL-PRF-19500/399 Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-18 case. • Also available in chip form using

2C3960

Abstract: 2N3960 2N3960UB SD3960F SQ3960 SQ3960F chip type geometry
Contextual Info: Data Sheet No. 2C3960 Generic Packaged Part: Chip Type 2C3960 Geometry 0003 Polarity NPN 2N3960 Chip type 2C3960 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N3960, 2N3960UB, SD3960F, SQ3960, SQ3960F Product Summary:

2N3960

Abstract: npn transistor data chip die npn transistor
Contextual Info: 2N3960 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power switching transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3960J

npn transistor data

Abstract: 2N396
Contextual Info: 2N3960 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power switching transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3960J

2N3960UB

Abstract: 2N3960UBJ 2N3960UBJX TRANSISTOR DATA MIL-STD-750 2072 2N3960UBJV
Contextual Info: 2N3960UB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power switching transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3960UBJ

NPN 300 VOLTS vce POWER TRANSISTOR

Abstract: 2N3960 2N3960J 2N3960JV 2N3960JX NPN 200 VOLTS POWER TRANSISTOR transistor testing TRANSISTOR DATA 2N3960 JANTX JANTX 2N3960
Contextual Info: 2N3960 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power switching transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3960J

23/1N647-1 JANTXV

Contextual Info: 2N3960 Qualified Levels: JAN, JANTX, and JANTXV NPN Silicon Switching Transistor Compliant Qualified per MIL-PRF-19500/399 DESCRIPTION This 2N3960 epitaxial planar transistor is military qualified up to the JANTXV level for highreliability applications. It features a thru-hole TO-18 package. This device is also available in

2N3960

Abstract: 2N3960 JANTX 2N3960UB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/399 DEVICES LEVELS 2N3960 2N3960UB JAN JANTX JANTXV

2N3960

Abstract: 2N3959 motorola 2N3960 to-18 MOTOROLA til 31a a406 to-72 rf
Contextual Info: MOTOROLA SC XSTRS/R 4bE D F b3b?2SM 0 0 ^ 4 0 4 1 7 MOTOROLA 7 ^ 3 /-/^ SEMICONDUCTOR 2N3959 2N3960 TECHNICAL DATA The R F Line 1.8 GHz — 10 mAdc HIGH FREQUENCY TRANSISTORS NPN SIUCON NPN SILICON HIGH-FREQUENCY TRANSISTORS . . . designed fo r high-speed current-m ode logic switching applications.

2N3960

Abstract: motorola 3960 2n3959
Contextual Info: MOTOROLA SEMICONDUCTOR 2N3959 2N3960 TECHNICAL DATA The RF Line 1.8 GHz - 10 mAdc HIGH FREQUENCY TRANSISTO RS NPN SILICON NPN SILICON HIG H-FREQUENCY TRANSISTORS . . designed fo r high speed c u rre n t m ode logic s w itc h in g app lic a tio n s . H ig h C u rre n t-G a in —B a n d w id th P ro d u c t f j = 180 0 M H z T y p @ I q ^ 10 m A d c

clc014aje

Abstract: LMV8244 Video sync splitter lm DS34C86 LMH0074SQ DS8921 HV servo thermopile array 2N3960 DP838640 DS8921 equivalent
Contextual Info: Analog Design Guide for Xilinx FPGAs www.national.com/xilinx 2008 Vol. 1 Analog Solutions for FPGAs .2 Design Tools .3 PowerWise Solutions . 4-5 Data Conversion . 6-12 Amplifiers. 13-23

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MRF965

Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

2N5109 motorola

Abstract: MRF536 BFR90 application MRF931 MRF586 244A-01 MRF962 MRF961 mrf517 2N5943
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JT X and J T X V processing levels are available a s well a s Hi Rei pro­

2N5109 motorola

Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

2N3960

Abstract: 2N3960UB
Contextual Info: The documentation and process conversion measures necessary to comply with this document shall be completed by 20 May 2002. INCH-POUND MIL-PRF-19500/399D 20 February 2002 SUPERSEDING MIL-PRF-19500/399C 29 May 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

bcy59 equivalent

Abstract: BC140 equivalent 2N3913 BCY95 bc140-10 2n3019 equivalent 2N2708 2N328A BC109C NPN BCY22
Contextual Info: Discrete Devices Transistors Cont. Choppers Maximum Ratings Polarity PD Ambient h f e @>c VCE V e B Volts Volts Min/Max mA II Type Electrical Characteristics @ 25° C V c E (S a t) @ Ic/lß mA/mA — Vq @Ib mV rd@l B Cob Package pF mA Ohms mA - 14 Max 2N943